Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.

Embodiments of synthetic garnet materials having advantageous properties, especially for below resonance frequency applications, are disclosed herein. In particular, embodiments of the synthetic garnet materials can have high Curie temperatures and dielectric constants while maintaining low magnetization. These materials can be incorporated into isolators and circulators, such as for use in telecommunication base stations.

An oxide-based solid electrolyte with a high lithium ion conductance is provided. A lithium ion-conducting garnet type oxide includes Li, La, Ga, Zr, a halogen element, and oxygen. A lithium ion conductivity at room temperature is not lower than 1.0×10.sup.−3 S/cm. A proportion of Ga with respect to 1 mole of the oxide may be not larger than 0.5 moles.

The halogen element may be at least one type selected from the group consisting of Cl, Br, and I, and a proportion of Li with respect to 1 mole of the oxide may be not smaller than 6.1 moles and smaller than 6.5 moles.

A sintered composite ceramic includes a lithium-garnet major phase; and a lithium dendrite growth inhibitor minor phase, such that the lithium dendrite growth inhibitor minor phase comprises lithium tungstate. A method includes sintering a metal oxide component and a garnet component at a temperature in a range of 750° C. to 1500° C. to form a sintered composite ceramic.

A ceramic powder material containing a garnet-type compound containing Li, wherein the ceramic powder material has a pore volume of 0.4 mL/g or more and 1.0 mL/g or less.

Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.

A strongly scattering optoceramic converter material having a density of less than 97% is provided, as well as a method for producing such an optoceramic material. By appropriately choosing in particular the composition, blending method, and sintering conditions, the production method permits to produce converter materials with tailored properties.

A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 μm/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.

Amount of microcracks=frequency of microcracks×average depth of microcracks

This document describes processes for preparing ceramics, especially lithium-based ceramics. The ceramics produced by this process and their use in electrochemical applications are also described as well as electrode materials, electrodes, electrolyte compositions, and electrochemical cells comprising them.

A method for manufacturing a dense layer that includes: supplying a substrate and a suspension of non-agglomerated nanoparticles of a material P; depositing a layer on the substrate using the suspension; drying the layer thus obtained; and densifying the dried layer by mechanical compression and/or heat treatment. The method is characterised in that the suspension of non-agglomerated nanoparticles of material P includes nanoparticles of material P having a size distribution having a value of D50. The distribution includes nanoparticles of material P of a first size D1 between 20 nm and 50 nm, and nanoparticles of material P of a second size D2 characterised by the value D50 being at least five times less than that of D1, or the distribution has a mean size of nanoparticles of material P less than 50 nm, and a standard deviation to mean size ratio greater than 0.6.