Methods of manufacturing a ceramic honeycomb body having a honeycomb structure with a matrix of intersecting walls, and a skin disposed on an outer peripheral portion of the matrix where the skin has a first average porosity and the interior portion of the matrix has a second average porosity that is greater than the first average porosity. The methods include coating at least the skin with a fluid formulation containing a sintering aid and subsequently firing the honeycomb structure. In certain embodiments, a glass layer is formed in the skin or in regions of the walls directly adjacent to the skin. In certain embodiments, the coating is applied to a green honeycomb structure, and in other embodiments the coating is applied to a ceramic honeycomb structure. Other honeycomb bodies and methods are described.

Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material and methods of manufacturing. The hexagonal ferrite material can be Y-phase strontium hexagonal ferrite material. In some embodiments, strontium can be substituted out for a trivalent or tetravalent ion composition including potassium, thereby providing for advantageous properties.

The present disclosure provides a melt electrospinning device. The melt electrospinning device includes a melting unit, a spinning unit, an electrostatic generating unit, a collection unit, and a sealed cavity. A lining of the melting unit is made of a material having a melting point greater than 500° C. The spinning unit is connected to the bottom of the melting unit and includes a spinneret made from a conductive material having a melting point greater than 500° C. The melt electrospinning process is performed in the sealed cavity. The present disclosure further provides a melt electrospinning method.

A sintered composite ceramic includes: a lithium-garnet major phase; and a lithium-rich minor phase, such that the lithium-rich minor phase has Li.sub.xTiO.sub.(x+4)/2, with 0.66≤x≤4. The sintered composite ceramic may exhibit a relative density of at least 90% of a theoretical maximum density of the ceramic, an ionic conductivity of at least 0.35 mS.Math.cm.sup.−1, or a critical current density (CCD) of at least 1.0 mA.Math.cm.sup.−2.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO.sub.3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material and methods of manufacturing. The hexagonal ferrite material can be Y-phase strontium hexagonal ferrite material. In some embodiments, strontium can be substituted out for a trivalent or tetravalent ion composition including potassium, thereby providing for advantageous properties.

Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material and methods of manufacturing. The hexagonal ferrite material can be Y-phase strontium hexagonal ferrite material. In some embodiments, strontium can be substituted out for a trivalent or tetravalent ion composition including potassium, thereby providing for advantageous properties.

The present invention provides an annealing separator composition, a grain-oriented electrical steel sheet and a method for manufacturing a grain-oriented electrical steel sheet. An annealing separator composition for a grain-oriented electrical steel sheet according to an embodiment of present invention comprising: on the basis of total solid 100 wt %, 5 to 70 wt % of mullite; and the remainder being magnesium oxide or magnesium hydroxide.

A sintered composite ceramic, includes: a lithium-garnet major phase; and a lithium dendrite growth inhibitor minor phase, such that the lithium dendrite growth inhibitor minor phase has a Li-metal oxide in a range of >0-10 wt. % based on the total weight of the sintered composite ceramic.