C04B2235/3293

Scintillation material of rare earth orthosilicate doped with strong electron-affinitive element and its preparation method and application thereof

The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE.sub.2(1−x−y+δ/2)Ce.sub.2xM.sub.(2y−δ)Si.sub.(1−δ)M.sub.δO.sub.5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x≤0.05, the value of y is 0<y≤0.015, and the value of δ is 0≤δ≤10−4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

Dielectric material, method of preparing the same, and device comprising the dielectric material

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3  [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.

GARNET COMPOUND, SINTERED BODY AND SPUTTERING TARGET CONTAINING SAME

A garnet compound represented by a general formula (I): Ln.sub.3In.sub.2Ga.sub.3-XAl.sub.XO.sub.12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

GREEN BODY INCLUDING A METAL NANOPARTICLE BINDER

According to an example, a green body may include from about 1 wt. % to about 20 wt. % of a metal nanoparticle binder and a build material powder, wherein the metal nanoparticle binder is selectively located within an area of the green body to impart a strength greater than about 3 MPa.

Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin film

A sputtering target including an oxide that includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO.sub.3(ZnO).sub.m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.

Sputtering target, oxide semiconductor thin film, and method for producing these
11443943 · 2022-09-13 · ·

A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the oxide includes a homologous structure compound represented by InAlO.sub.3(ZnO).sub.m (m is 0.1 to 10) and a bixbyite structure compound represented by In.sub.2O.sub.3.

Garnet compound, sintered body and sputtering target containing same

A garnet compound represented by a general formula (I): Ln.sub.3In.sub.2Ga.sub.3-XAl.sub.XO.sub.12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,
0.80≤In/(In+Y+Ga)≤0.96  (1),
0.02≤Y/(In+Y+Ga)≤0.10  (2), and
0.02≤Ga/(In+Y+Ga)≤0.10  (3), and Al element at an atomic ratio as defined in a formula (4) below,
0.005≤Al/(In+Y+Ga+Al)≤0.07  (4),
where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Magnesium-based thermoelectric conversion material, magnesium-based thermoelectric conversion element, and method for producing magnesium-based thermoelectric conversion material
11462671 · 2022-10-04 · ·

A magnesium-based thermoelectric conversion material made of a sintered compact of a magnesium compound, in which, in a cross section of the sintered compact, a Si-rich metallic phase having a higher Si concentration than in magnesium compound grains is unevenly distributed in a crystal grain boundary between the magnesium compound grains, an area ratio of the Si-rich metallic phase is in a range of 2.5% or more and 10% or less, and a number density of the Si-rich metallic phase having an area of 1 μm.sup.2 or more is in a range of 1,800/mm.sup.2 or more and 14,000/mm.sup.2 or less.

Magnetic material, electronic component, and winding core
11437171 · 2022-09-06 · ·

A magnetic material which is likely to be cracked or chipped. The magnetic material is a magnetic material including ferrite particles and segregated particles containing Bi and Si, and characteristically, the magnetic material contains, as a main constituent, 46.0 mol % to 50.0 mol % Fe.sub.2O.sub.3, 0.4 mol % to 8.0 mol % CuO, 23.0 mol % to 32.0 mol % ZnO, and 18.0 mol % to 22.0 mol % NiO, and the ratio of the average particle size of the segregated particles to the average particle size of the ferrite particles is 0.04 or more and 0.19 or less (i.e., 0.04 to 0.19).