Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

A doping method using an electric field includes stacking a sacrificial layer on a doped layer, disposing a doping material on the sacrificial layer, disposing electrodes on the doping material and the doped layer, respectively, and doping the doping material into the doped layer through oxidation, diffusion, and reduction of the doping material by the electric field.

A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode, wherein the dielectric layer includes first and second grains, wherein the first grain has a core-shell structure including a shell having an atomic ratio of 2*Sn/(Ba+Ti+Sn) or 2*Hf/(Ba+Ti+Hf) to be 1.0% or more and 5.0% or less, and a core having an atomic ratio of 2*Sn/(Ba+Ti+Sn) and 2*Hf/(Ba+Ti+Hf) to be less than 1.0%, and the second grain has an atomic ratio of 2*Sn/(Ba+Ti+Sn) and 2*Hf/(Ba+Ti+Hf) to be less than 1.0%, and wherein an area occupied by the first grain in an entire area of the first and second grains is 28.3-82.3%.

A grain-oriented M-type hexagonal ferrite has the formula MeFe.sub.12O.sub.19, and a dopant effective to provide planar magnetic anisotropy and magnetization in a c-plane, or a cone anisotropy, in the hexagonal crystallographic structure wherein Me is Sr.sup.+, Ba.sup.2+ or Pb.sup.2+, and wherein greater than 30%, preferably greater than 80%, of c-axes of the ferrite grains are aligned perpendicular to the c-plane.

An object of the present invention is to provide a sputtering target that can suppress a generation amount of fine nodules which lead to an increase in substrate particles during sputtering, and a method for producing the same. A ceramic sputtering target, the sputtering target having a surface roughness Ra on a sputtering surface of 0.5 μm or less and an Svk value measured with a laser microscope on the sputtering surface of 1.1 μm or less.

In a multilayer ceramic capacitor, an intersection of an interface is defined by a second dielectric ceramic layer, a first internal electrode layer or a second internal electrode layer, and a third dielectric ceramic layer, on a plane including a length direction and a width direction, the second dielectric ceramic layer and the third dielectric ceramic layer include a near intersection region at or near the intersection, and an average particle size of dielectric particles in the near intersection region is smaller than average particle sizes of dielectric particles in the first dielectric ceramic layer, the second dielectric ceramic layer, and the third dielectric ceramic layer.

A method of preparing an ITO ceramic target includes that: In.sub.2O.sub.3 powder with mass fraction of 90˜97 and SnO.sub.2 powder with mass fraction of 10˜3 are ball-milled and mixed with deionized water, diluent, binder and polymer material by a sand mill to obtain an ITO ceramic slurry with a solid content between 70˜80% and a viscosity between 120˜300 mpa.Math.s, with an average particle size D50 of the mixed powder controlled at 100˜300 nm; the ITO ceramic slurry is shaped by a pressure grouting to obtain an ITO ceramic green body with a relative density of 58˜62%; the ITO ceramic green body is put into a degreasing and sintering integrated furnace, and under a degreasing temperature of 700˜800° C., the ITO ceramic target is degreased in an atmospheric oxygen atmosphere for the time set to 12˜36 hours; the temperature increases from the degreasing temperature to the first sintering temperature of 1,600˜1,650° C.

A hard lead zirconate titanate (PZT) ceramic has an ABO.sub.3 structure with A sites and B sites. The PZT ceramic is doped with Mn and with Nb on the B sites and the ratio Nb/Mn is <2. A piezoelectric multilayer component having such a PZT ceramic and also a method for producing a piezoelectric multilayer component are also disclosed.

A superconducting composition of matter including overlapping first and second regions. The regions comprise unit cells of a solid, the first region comprises an electrical insulator or semiconductor, and the second region comprises a metallic electrical conductor. The second region extends through the solid and a subset of said second region comprise surface metal unit cells that are adjacent to at least one unit cell from the first region. The ratio of the number of said surface metal unit cells to the total number of unit cells in the second region being at least 20 percent.

An oxide ion conductor has a X.sub.3Z.sub.2(TO.sub.4).sub.3 structure, where X is a divalent metal element, Z is a trivalent metal element, and T is a tetravalent metal element, and has a composition expressed by (X.sub.1-xA.sub.x).sub.3(Z.sub.1-yB.sub.y).sub.2(T.sub.1-zC.sub.z).sub.3O.sub.12+δ where the element X is Ca, Fe, Gd, Ba, Sr, Mn, and/or Mg, the element Z is Al, Cr, Fe, Mn, V, Ga, Co, Ni, Ru, Rh, and/or Ir, the element T is Si and/or Ge, an element A is La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Sr, an element B is Zn, Mn, Co, Ru, and/or Rh, and an element C is Si, Al, Ga, and/or Sn, 0≤x≤0.2, 0≤y≤0.2, and 0≤z≤0.2 are satisfied, and δ is a value securing electrical neutrality.