The present invention discloses a dielectric ceramic formula enabling one to obtain a multilayer ceramic capacitor by alternatively stacking the ceramic dielectric layers and base metal internal electrodes. The dielectric ceramic composition comprises a primary ingredient:

[(Na.sub.1-xK.sub.x).sub.sA.sub.1-s].sub.m[(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]O.sub.3

wherein:
A is at least one selected from the alkaline-earth element group of Mg, Ca, Sr, and Ba;
B1 is at least one selected from the group of Ti, Zr, Hf and Sn;
B2 is at least one selected from transition metal elements;
and wherein:
x, y, s, u, v, and w are molar fractions of respective elements, and m is the molar ratio of [(Na.sub.1-xK.sub.x).sub.sA.sub.1-s] and [(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]. They are in the following respective range:
0.93≤m≤1.07;
0.7≤s≤1.0;
0.00≤x≤0.05; 0.00≤y≤0.65;
0.7≤u≤1.0; 0.0≤v≤0.3; 0.001≤w≤0.100;
a first sub-component composes of at least one selected from the rare-earth compound,
wherein the rare-earth element is no more than 10 mol % parts with respect to the main component; and
a second sub-component composes a compound with low melting temperature to assist the ceramic sintering process, said frit, which is Li free and could be at least one selected from fluorides, silicates, borides, and oxides. The content of frit is within the range of 0.01 mol % to 15.00 mol % parts with respect to the main component.

This invention relates to a multilayer ceramic capacitor produced by alternatively stacking the ceramic dielectric layers and internal electrodes mainly comprise base metals. The present dielectric ceramic composition having a main component with a perovskite structure ABO.sub.3 formula of:

(K.sub.xNa.sub.yLi.sub.zA.sub.1-x-y-z).sub.m(Nb.sub.uTa.sub.vB.sub.w)O.sub.3

wherein:
A is at least one selected from the alkaline earth element group of Ca, Sr, and Ba;
B is at least one selected from the group of Ti, Zr, Hf and Sn;
and wherein:
x, y, z, u, v, and w are molar fractions of respective elements, and m is the molar ratio of A-site and B-site elements. They are in the following respective range:
0.95≤m≤1.05;
0.05≤x≤0.90; 0.05≤y≤0.90; 0.00≤z≤0.12
0<u<1; 0.0≤w≤0.3; u+v+w=1
The dielectric ceramic composition further contains:
a first accessory ingredient composes at least one selected from the rare-earth compounds, wherein the rare-earth element is no more than 10 mole parts with respect to 100 mole parts of the main component; a second accessory ingredient composes at least one selected from transition metal compounds, wherein the transition metal element is in the range of 0.05 mole to 10.00 mole parts with respect to 100 mole parts of the main component; and a third accessory ingredient composes a compound with low melting temperature to assist the ceramic sintering process, which is within the range of 0.01 mole to 15 mole parts with respect to 100 mole parts of the main component.

(i) a step of disposing a powder that includes an absorber absorbing light of a wavelength included in a laser beam to be irradiated and silicon dioxide as a main component; (ii) a step of sintering or melting and solidifying the powder by irradiating the powder with a laser beam; and (iii) a step of heat-treating a shaped object formed by repeating the steps (i) and (ii) at 1470° C. or more and less than 1730° C.

A multilayer capacitor includes a body including a plurality of dielectric layers and a plurality of internal electrodes laminated with the dielectric layers interposed therebetween, and an external electrode disposed externally on the body and connected to one or more of the plurality of internal electrodes. One of the plurality of dielectric layers includes a barium titanate composition including a Sn component. One of the plurality of internal electrodes includes a Sn component. The one of the plurality of dielectric layers has a Sn content equal to at least twice a Sn content of the one of the plurality of internal electrodes adjacent to the one of the plurality of dielectric layers.

A multiphase ferrite composition includes a primary phase consisting of a MnZn ferrite matrix; and 0.01 to 10 weight percent microscaled inclusion particles comprising an orthoferrite RFeO3 wherein R is a rare earth ion, yttrium iron garnet (YIG), or a combination thereof, wherein the microscaled inclusion particles have an average particle size (D50) of 0.1 micron to 5 microns, and wherein the D50 of the microscaled inclusion particles is smaller than the average particle size (D50) of the MnZn ferrite particles; and optionally 0.01 to 5 weight percent additive; wherein weight percent is based on the total weight of the multiphase ferrite composition. A method of manufacturing the multiphase ferrite composition is also disclosed.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

A dielectric material includes a main component represented by (Ba.sub.1-xCa.sub.x)(Ti.sub.1-y(Zr, Sn, Hf).sub.y)O.sub.3 (0≤x≤1 and 0≤y≤0.5); a first subcomponent including at least one of elements among Y, Dy, Ho, Er, Gd, Ce, Nd, Nb, Sm, Tb, Eu, Tm, La, Lu, and Yb; a second subcomponent including Si and/or Al; and a third subcomponent including Ba and/or Ca.

An oriented apatite-type oxide ion conductor includes a composite oxide expressed as A.sub.9.33+x[T.sub.6.00−yM.sub.y]O.sub.26.0+z, where A represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba, T represents an element including Si or Ge or both, and M represents one or two or more elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo, and where x is from −1.00 to 1.00, y is from 0.40 to less than 1.00, and z is from −3.00 to 2.00.

A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of dielectric crystal grains, and at least one of the plurality of dielectric crystal grains has a core-double shell structure, the double shell includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell, the first shell includes a first element, one or more of Sn, Sb, Ge, Si, Ga, In, or Zr, and the second shell includes a second element, one or more of Ca or Sr.

Disclosed are a dielectric ceramic includes a plurality of crystal grain bulks including a ceramic, and a grain boundary between the plurality of crystal grain bulks, wherein a dopant is segregated in the grain boundary.