A method for producing a piezoelectric single crystal ingot shows small variation in the concentration of PbTiO.sub.3 in the growth direction of single crystal. A complete solid solution-type piezoelectric single crystal ingot is produced by using the Bridgman method, including: filling a starting material, wherein a relaxor having a compositional formula Pb(B.sub.1,B.sub.2)O.sub.3 is blended with lead titanate having a composition PbTiO.sub.3 to give a preset composition, into a crucible for growth; heating to the melting temperature to give a melted liquid layer; then moving the crucible for growth toward the low temperature side; and thus starting one-direction solidification from the lower part of the crucible to thereby produce a single crystal. During solidification, the feedstock containing the relaxor and lead titanate having a maximum grain size 3 mm is continuously supplied into the crucible.

There is disclosed a piezoelectric ceramic having the composition: a[PbTiO.sub.3]-b[SrTiO.sub.3]-c[BiFeO.sub.3]-d[(K.sub.xBi.sub.1-x)TiO.sub.3]; wherein 0.4<x<0.6; 0.1<a<0.4; 0.01<b0.2; c0.05; d0.01; and a+b+c+d=1 optionally comprising an A- or B-site metal dopant in an amount of up to 2 at. %.

Disclosed are embodiments of isolator/circulator junctions that can be used for radio-frequency (RF) applications, and methods of manufacturing the junctions. The junctions can have excellent impedance matching, even as they are being miniaturized, providing significant advantages over previously used junctions. The junctions can be formed of both high and low dielectric constant material.

A method for producing a piezoelectric component is disclosed. In an embodiment, the method includes producing a ceramic precursor material of the general formula Pb.sub.1-x-y-(2a-b)/2V.sub.(2a-b)/2Ba.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where RE is a rare earth metal and V is a Pb vacancy, mixing the ceramic precursor material with a sintering aid, forming a stack which includes alternating layers including the ceramic precursor material and a layer including Cu and debindering and sintering the stack thereby forming the piezoelectric component having Cu electrodes and at least one piezoelectric ceramic layer including Pb.sub.1-x-y-[(2a-b)/2]-p/2V.sub.[(2a-b)/2-p/2]Cu.sub.pBa.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where 0x0.035, 0y0.025, 0.42z0.5, 0.0045a0.009, 0.009b0.011, and 2a>b, p2ab.

An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a Pb.sub.xLa.sub.1-x([Zr.sub.1-YSn.sub.Y].sub.ZTi.sub.1-Z) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.

Disclosed is a ferromagnetic element-substituted room-temperature multiferroic material having ferromagnetism and ferroelectricity at room temperature, wherein the ferromagnetic element-substituted room-temperature multiferroic material includes a compound of chemical formula 1: <chemical formula 1> (Pb.sub.1-xM.sub.x)Fe.sub.1/2Nb.sub.1/2O.sub.3. In chemical formula 1, M represents a ferromagnetic element, and x represents a number greater than 0 and smaller than 1.

A grain-oriented M-type hexagonal ferrite has the formula MeFe.sub.12O.sub.19, and a dopant effective to provide planar magnetic anisotropy and magnetization in a c-plane, or a cone anisotropy, in the hexagonal crystallographic structure wherein Me is Sr.sup.+, Ba.sup.2+ or Pb.sup.2+, and wherein greater than 30%, preferably greater than 80%, of c-axes of the ferrite grains are aligned perpendicular to the c-plane.

A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.

The present invention relates to a method for preparing a phase-separated lead telluride-lead sulfide nanopowder using solution synthesis and a phase-separated lead telluride-lead sulfide nanopowder prepared by the method. The method includes: (a) mixing tellurium and a first solvent, followed by ultrasonic irradiation to prepare a tellurium precursor solution; (b) mixing an organosulfur compound and a second solvent, followed by ultrasonic irradiation to prepare a sulfur precursor solution; (c) mixing lead oxide, a third solvent, and a fourth solvent and heating the mixture to prepare a lead precursor solution; (d) adding the tellurium precursor solution to the lead precursor solution and allowing the mixture to react; (e) adding the sulfur precursor solution to the reaction mixture of step (d) and allowing the resulting mixture to react; and (f) cooling the reaction mixture of step (e) to room temperature to prepare a phase-separated lead telluride-lead sulfide nanopowder.

The invention provides a material with perovskite-type structure having a formula selected from Formula I and Formula II. in which A represents one or more monovalent cations that can be selected from alkali metal ions, (organo)ammonium and (organo)phosphonium ions; A represents one or more divalent cations that can be selected from alkaline earth metal cations; A represents one or more trivalent cations that can be selected from lanthanide ions; a, b and c are each in the range of from 0 to 1, a+b+c=1; x=a+2b+3c; d is in the range of from 1 to 5, each of e, f and g are in the range of from 0 to 1. with the proviso that g is less than 1 in Formula I; e+f+g?1; y=2(e+f)+3g; each X in X and X2 is independently selected from the halogens; and h is in the range of from 0.0001 to 0.2. X2 is a dihalogen moiety, and can be the source of a valence band hole in the photovoltaic semiconducting material. The invention also relates to photovoltaic devices or a surface coating that comprises the material.