Disclosed are an anti-corrosion and anti-coking ceramic coating with easy state identification for a coal-fired boiler and a preparation method thereof. The ceramic coating is formed by compounding a bottom coating layer and a surface coating layer, wherein the bottom coating layer is prepared from raw materials comprising sodium silicate, lanthanum oxide, niobium pentoxide, aluminum oxide, bismuth oxide, boron oxide, zinc oxide, silicon oxide, titanium dioxide, nano whisker, titanium nitride, and graphite fluoride, and the surface coating layer is prepared from raw materials comprising sodium silicate, lanthanum oxide, niobium pentoxide, chromium oxide, aluminum oxide, bismuth oxide, boron oxide, zinc oxide, silicon oxide, graphite fluoride, titanium nitride, silicon carbide, nano whisker, and cobalt green. An operating state of the ceramic coating is rapidly identified by a color difference between the bottom coating layer and the surface coating layer, which is beneficial to efficient maintenance of the ceramic coating during inspection.

A sintered composite ceramic includes a lithium-garnet major phase; and a lithium dendrite growth inhibitor minor phase, such that the lithium dendrite growth inhibitor minor phase comprises lithium tungstate. A method includes sintering a metal oxide component and a garnet component at a temperature in a range of 750° C. to 1500° C. to form a sintered composite ceramic.

A ferrite ceramic composition includes, as main components, from 27.0 mol % to 41.0 mol % of Fe in terms of Fe.sub.2O.sub.3, from 16.0 mol % to 24.0 mol % of Ni in terms of NiO, from 23.0 mol % to 37.0 mol % of Zn in terms of ZnO, from 5.0 mol % to 9.0 mol % of Cu in terms of CuO, and from 4.0 mol % to 14.0 mol % of Si in terms of SiO.sub.2, and as sub-components, relative to 100 parts by mass of the main components, from 0.3 parts by mass to 1.2 parts by mass of Bi in terms of Bi.sub.2O.sub.3, from 0.3 parts by mass to 1.2 parts by mass of Co in terms of Co.sub.3O.sub.4, from 0.01 parts by mass to 0.25 parts by mass of Mn in terms of Mn.sub.2O.sub.3, and from 0.003 parts by mass to 0.030 parts by mass of Cr in terms of Cr.sub.2O.sub.3.

A composition of matter includes an n-type semiconductor. At least a portion of the semiconductor has the crystal structure of the chemical compound represented by FeWO.sub.4. The portion of the semiconductor having the crystal structure of FeWO.sub.4 includes iron and tungsten. A photoanode can have a light-absorbing layer that includes or consists of the semiconductor. A solar fuels generator can include the photoanode.

The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. The composite material is composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, Bi.sub.2WO.sub.6 is an orthorhombic system, Bi.sub.2S.sub.3 is a p-type semiconductor located on a (130) crystal face, MoS.sub.2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets uniformly grow on an outer layer. The average particle size of composite materials is in the range of 2.4-2.6 μm. The spherical Bi.sub.2WO.sub.6/Bi.sub.2S.sub.3/MoS.sub.2 heterojunction ternary composite material prepared in the present invention has good adsorption of Cr(VI) and high catalytic reduction ability under visible light.

The invention relates to a lead-free piezoceramic material based on bismuth sodium titanate (BST) having the following parent composition: x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-yBaTiO.sub.3-zSrTiO.sub.3 where x+y+z=1 and 0<x<1, 0<y<1, 0≤z≤0.07 or x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-yBaTiO.sub.3-zCaTiO.sub.3 where x+y+z=1 and 0<x<1, 0<y<1, 0<z≤0.05 or x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-y(Bi.sub.0.5K.sub.0.5)TiO.sub.3-zBaTiO.sub.3 where x+y+z=1 and 0<x<1, 0<y<1, 0≤z<1, characterized by addition of a phosphorus-containing material in a quantity that gives a phosphorus concentration of from 100 to 2000 ppm in the piezoceramic material.

This thermoelectric conversion module is formed by electrically connecting, by a conductive member, one end of an n-type thermoelectric conversion element having a negative Seebeck coefficient and having a half-Heusler structure to one end of a p-type thermoelectric conversion element containing an oxide having a positive Seebeck coefficient at a temperature of 25° C. or higher. The conductive member is connected to the n-type thermoelectric conversion element and the p-type thermoelectric conversion element through a connection layer containing a conductive metal comprising silver, and the connection layer is characterized by further containing an oxide to reduce the bond resistance between the n-type thermoelectric conversion element and/or the p-type thermoelectric conversion element.

A thermoelectric conversion material formed of a sintered body containing magnesium silicide as a main component contains 0.5 mass % or more and 10 mass % or less of aluminum oxide. The aluminum oxide is distributed at a crystal grain boundary of the magnesium silicide.

Provided is a piezoelectric ceramics including crystal grains each including: a first region that is formed of a perovskite-type metal oxide having a crystal structure in which a central element of a unit cell is located at an asymmetrical position; and a second region that is formed of a perovskite-type metal oxide having a crystal structure in which a central element of a unit cell is located at a symmetrical position, and that is present inside the first region, wherein a ratio of a cross-sectional area of the second region to a cross-sectional area of the piezoelectric ceramics is 0.1% or less.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.