C04B2235/3298

Zinc oxide varistor ceramics

Provided according to embodiments of the invention are varistor ceramic formulations that include zinc oxide (ZnO). In particular, varistor ceramic formulations of the invention may include dopants including an alkali metal compound, an alkaline earth compound, an oxide of boron, an oxide of aluminum, or a combination thereof. Varistor ceramic formulations may also include other metal oxides. Also provided according to embodiments of the invention are varistor ceramic materials formed by sintering a varistor ceramic formulation according to an embodiment of the invention. Further provided are varistors formed from such ceramic materials and methods of making such materials.

LITHIUM-GARNET SOLID ELECTROLYTE COMPOSITE, TAPE ARTICLES, AND METHODS THEREOF

A composite ceramic including: a lithium garnet major phase; and a grain growth inhibitor minor phase, as defined herein. Also disclosed is a method of making composite ceramic, pellets and tapes thereof, a solid electrolyte, and an electrochemical device including the solid electrolyte, as defined herein.

DIELECTRIC THIN FILM, DIELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD AND INKJET PRINTER DEVICE

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.

PIEZOELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC ELEMENT APPLICATION DEVICE

A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is α and α×Tc3+(1−α)×Tc1 is Tc4, |Tc4−Tc2| is 50° C. or lower.

Liquid-ejecting head, liquid-ejecting apparatus, piezoelectric element, and piezoelectric material

A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and is ferroelectric.

Method of making a dental restoration

A method of making a monolithic dental restoration. The method includes the steps of providing a monolithic precursor of a dental restoration and firing the monolithic dental restoration precursor to provide the monolithic dental restoration. The zirconia material of both the dental restoration precursor as well as the dental restoration has a relative density of greater than 98% of the theoretic density of the zirconia material. The invention helps providing a color of a non-glazed dental restoration which resembles the color of a glazed dental restoration.

Compositions for erosion and molten dust resistant environmental barrier coatings
11667584 · 2023-06-06 · ·

Compounds are generally provided, which may be particularly used to form a layer in a coating system. In one embodiment, the compound may have the formula: A.sub.xB.sub.bLn.sub.1-x-bHf.sub.1-t-dTi.sub.tD.sub.dMO.sub.6, where: A is Al, Ga, In, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Fe, Cr, Co, Mn, Bi, or a mixture thereof; x is about 0.01 to about 0.99; b is 0 to about 0.5, with 1-x-b being 0 to about 0.99 such that Ln is present in the compound; Ln is a rare earth or a mixture thereof that is different than A; t is 0 to about 0.99; D is Zr, Ce, Ge, Si, or a mixture thereof; d is 0 to about 0.5; the sum of t and d is less than 1 such that Hf is present in the compound; and M is Ta, Nb, or a mixture thereof.

Dielectric ceramic composition and multilayer ceramic capacitor including the same

There is provided a dielectric ceramic composition including a base powder, wherein the base powder includes: a first major component represented by BaTiO.sub.3, a second major component represented by (Na, K)NbO.sub.3, and a third major component represented by (Bi, Na)TiO.sub.3. The base powder is represented by xBaTiO.sub.3-y(Na, K)NbO.sub.3-z(Bi, Na)TiO.sub.3, where x+y+z=1, and x, y, and z are represented by mol, and x, y and z satisfy 0.5≦x≦0.97, 0.01≦y≦0.48, and 0.02≦z≦0.2, respectively. In certain embodiments, the base powder is be represented by xBaTiO.sub.3-y(Na.sub.0.5K.sub.0.5)NbO.sub.3-z(Bi.sub.0.5Na.sub.0.5)TiO.sub.3.

Lead-free piezoelectric material

A lead-free piezoelectric ceramic material has the general chemical formula xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaN-bO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3, xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3, xBiCoO3-yBa-TiO3-z(Bi0.5Na0.5)TiO3, or xBiCoO3-yNaNbO3-zKNbO3; wherein x+y+z=1, and x, y, z≠0.

MnZn-Based Ferrite and Method for Manufacturing the Same

Provided are: a MnZn-based ferrite which allows to have a low magnetic core loss and to suppress a time-dependent change of magnetic property under a high-temperature environment by a control of ambient oxygen concentration and an increase of the magnetic core loss, and a method for manufacturing the same. The MnZn-based ferrite is characterized in that Fe ranges from 53.25 mol % or more to 54.00 mol % or less on the basis of Fe.sub.2O.sub.3, Zn ranges from 2.50 mol % or more to 8.50 mol % or less on the basis of ZnO and Mn is the remainder on the basis of MnO, Si ranges from more than 0.001 mass % to less than 0.02 mass % on the basis of SiO.sub.2, Ca ranges from more than 0.04 mass % to less than 0.4 mass % on the basis of CaCO.sub.3, Co is less than 0.5 mass % on the basis of Co.sub.3O.sub.4, Bi is less than 0.05 mass % on the basis of Bi.sub.2O.sub.3, Ta is less than 0.05 mass % on the basis of Ta.sub.2O.sub.5, Nb is less than 0.05 mass % on the basis of Nb.sub.2O.sub.5, Ti is less than 0.3 mass % on the basis of TiO.sub.2, and Sn is less than 0.3 mass % on the basis of SnO.sub.2, and note that the converted total amount of Ta.sub.2O.sub.5 and Nb.sub.2O.sub.5 is less than 0.05 mass % and the converted total amount of TiO.sub.2 and SnO.sub.2 is less than 0.3 mass %.