A module having a power semiconductor device and a ceramic capacitor which is configured for cooling the power semiconductor device.

The present invention relates to a method of preparing a solid solution ceramic material having increased electromechanical strain, as well as ceramic materials obtainable therefrom and uses thereof. In one aspect, the present invention provides a method A method of increasing electromechanical strain in a solid solution ceramic material which exhibits an electric field induced strain derived from a reversible transition from a non-polar state to a polar state; i) determining a molar ratio of at least one polar perovskite compound having a polar crystallographic point group to at least one non-polar perovskite compound having a non-polar crystallographic point group which, when combined to form a solid solution, forms a ceramic material with a major portion of a non-polar state; ii) determining the maximum polarization, P.sub.max, remanent polarisation, P.sub.r, and the difference, P.sub.max−P.sub.r, for the solid solution formed in step i); and either: iii)a) modifying the molar ratio determined in step i) to form a different solid solution of the same perovskite compounds which exhibits an electric field induced strain and which has a greater difference, P.sub.max−P.sub.r, between maximum polarization, P.sub.max, and remanent polarisation, P.sub.r, than for the solid solution from step i), or; iii)b) adjusting the processing conditions used for preparing the solid solution formed in step i) to increase the difference, P.sub.max−P.sub.r, in maximum polarization, P.sub.max, and remanent polarisation, P.sub.r, of the solid solution.

Focus is on zinc oxide itself, which is a base material for a zinc oxide varistor (laminated varistor), wherein specified quantities of additives are added to a zinc oxide powder having a crystallite size of 20 to 50 nm, grain diameter of 15 to 60 nm found using the specific surface area BET method, untamped density of 0.38 to 0.50 g/cm.sup.3, and tap density of 0.50 to 1.00 g/cm.sup.3. This allows securing of uniformity, high compactness, and high electrical conductivity of a zinc oxide sintered body, and provision of a zinc oxide varistor having high surge resistance.

A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

A method of forming a polyolefin-perovskite nanomaterial composite which contains oriented electrically and thermally conductive pathways. The method involves milling a polyolefin with particles of a perovskite nanomaterial, molding to forma composite plate, and subjecting the composite plate to an AC voltage. The AC voltage forms oriented electrically and thermally conductive pathways by partial dielectric breakdown of the composite. The presence of the oriented electrically and thermally conductive pathways gives the polyolefin-perovskite nanomaterial electrical and thermal conductivity and dielectric permittivity higher than the polyolefin alone.

A piezoelectric ceramic composition is represented by a composition formula A.sub.xBO.sub.3 and includes potassium sodium niobate containing K and Na that account for 80% or more of an amount of A-site elements and containing Nb that accounts for 70% or more of an amount of B-site elements. The piezoelectric ceramic composition contains Ta and Fe at a B-site.

A ferrite sintered magnet has a ferrite phase having a magnetoplumbite-type crystal structure, and contains at least a metal element A, a metal element R, Fe, Co, Zn, and B. The element A is at least one kind of element selected from the group consisting of Sr, Ba, Ca, and Pb, and essentially includes Ca. The element R is at least one kind of element selected from the group consisting of Bi and rare-earth elements including Y, and essentially includes La. Atomic ratios of the metal elements satisfy the following expressions.

A.sub.1-rR.sub.rFe.sub.xCo.sub.yZn.sub.z  (1)

0.40≤r≤0.70  (2)

8.20≤x≤9.34  (3)

0.05<y≤0.50  (4)

0<z≤0.20  (5)

The content of Si is 0 to 0.60% by mass in terms of SiO.sub.2, and the content of B is 0.01 to 0.70% by mass in terms of B.sub.2O.sub.3.

The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE.sub.2(1−x−y+δ/2)Ce.sub.2xM.sub.(2y−δ)Si.sub.(1−δ)M.sub.δO.sub.5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x≤0.05, the value of y is 0<y≤0.015, and the value of δ is 0≤δ≤10−4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

The invention relates to a method for producing ceramics having piezoelectric properties in predominantly aqueous suspending agents.

In a piezoelectric ceramic composition including potassium sodium niobate, a transition temperature at which a phase transition between an orthorhombic crystal structure and a tetragonal crystal structure occurs lies in a temperature range of −20° C. or higher and 60° C. or lower. In the piezoelectric ceramic composition, αt/αO is 0.72 or more, where αO represents a coefficient of linear expansion determined when a crystal structure is orthorhombic in the temperature range, and αt represents a coefficient of linear expansion determined when a crystal structure is tetragonal in the temperature range.