(i) a step of disposing a powder that includes an absorber absorbing light of a wavelength included in a laser beam to be irradiated and silicon dioxide as a main component; (ii) a step of sintering or melting and solidifying the powder by irradiating the powder with a laser beam; and (iii) a step of heat-treating a shaped object formed by repeating the steps (i) and (ii) at 1470° C. or more and less than 1730° C.

A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.

A transparent complex oxide sintered body is manufactured by sintering a compact in an inert atmosphere or vacuum, and HIP treating the sintered compact, provided that the compact is molded from a source powder based on a rare earth oxide: (Tb.sub.xY.sub.1-x).sub.2O.sub.3 wherein 0.4≤x≤0.6, and the compact, when heated in air from room temperature at a heating rate of 15° C./min, exhibits a weight gain of at least y % due to oxidative reaction, y being determined by the formula: y=2x+0.3. The sintered body has a long luminescent lifetime as a result of controlling the valence of Tb ion.

Method for manufacturing a composite material part includes injecting a slurry containing a refractory ceramic particle powder into a fibrous texture, draining the liquid from the slurry that passed through the fibrous texture and retaining the refractory ceramic particle powder inside said texture so as to obtain a fibrous preform loaded with refractory ceramic particles, and demoulding of the fibrous preform. The method includes, after demoulding the fibrous preform, checking the compliance of the demoulded fibrous preform. If the preform is noncompliant, the method also includes, before a sintering, immersing the demoulded fibrous preform in a bath of a liquid suitable for decompacting the refractory ceramic particles present in the fibrous preform, and additionally injecting a slurry containing a refractory ceramic particle powder into the fibrous preform present in the mould cavity.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

A sintered material includes a first phase and a second phase, wherein the first phase is composed of cubic boron nitride particles, and the following relational expressions are satisfied when more than or equal to two cubic boron nitride particles adjacent to and in direct contact with each other among the cubic boron nitride particles are defined as a contact body, Di represents a length of an entire perimeter of the contact body, n represents the number of contact locations at which the cubic boron nitride particles are in direct contact with each other, d.sub.k represents a length of each of the contact locations, and Σd.sub.k (where k=1 to n) represents a total length of the contact locations: Dii=Di+(2×Σd.sub.k (where k=1 to n)); and [(Dii−Di)/Dii]×100≤50.

A sintered body containing polycrystalline grains of a metal oxynitride containing at least two metal elements, wherein Ba and at least one metal element of a crystal phase of the sintered body are contained in a triple point that is not a void between the polycrystalline grains. A method for producing the sintered body includes sintering a mixture of at least a metal oxynitride as a main component and a sintering aid containing cyanamide in an atmosphere containing nitrogen or a rare gas or in a reduced-pressure atmosphere of 10 Pa or less while applying a mechanical pressure with a retention time at a maximum heating temperature during the sintering set to 1 minute to 10 minutes.

An electromagnetic material for an inductance for operation at cryogenic temperatures including, in an electrically insulating matrix, metal nanoparticles with superparamagnetic behavior of size less than or equal to 30 nm and having a magnetic permeability greater than or equal to 1.5 for a frequency between 5 GHz and 50 GHz.

An α-sialon phosphor particle containing Eu. At least one slit is formed on a surface of the α-sialon phosphor particle. The α-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step.

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.