C04B2235/3895

Gypsum-based embedding material composition for casting

“A gypsum-based embedding material” is provided with which favorable casting can be conducted not only in the case where a conventional wax pattern is used, but also, in particular, in the case where a resin pattern different from the conventional wax pattern in disappearance temperature and disappearance behavior is used, and with which, although being a “gypsum-based embedding material”, occurrence of cracks, breakage, or the like in a mold is suppressed even when casting is conducted by “rapid heating” excellent in treatment efficiency. The gypsum-based embedding material composition for casting comprising, as main components, calcined gypsum as a binder, cristobalite and quartz as heat-expandable refractory materials, and a non-heat-expandable refractory material having an average particle diameter of 5 to 20 μm, the blending amount of the non-heat-expandable refractory material in 100 parts by mass of the main components being 10 to 25 parts by mass.

Complex composite particles and methods

A complex composite particle is made of a coal dust and binder composite that is pyrolyzed. Constituent portions of the composite react together causing the particles to increase in density and reduce in size during pyrolyzation, yielding a particle suitable for use as a proppant or in a composite structure.

HIGH TEMPERATURE COATING FOR SILICON NITRIDE ARTICLES
20170327937 · 2017-11-16 ·

A coated article, comprising an article having at least one surface having disposed thereupon an oxidation resistant coating comprising at least two constituents to form a composition, a first constituent comprising at least one thermal expansion component comprising at least about 10% by volume to up to about 99% by volume of the composition, a second constituent comprising at least one oxygen scavenger comprising at least about 1% by volume to up to about 90% by volume of the composition.

Process for manufacturing boron nitride agglomerates

Disclosed are methods for forming boron nitride-containing aggregates that exhibit improved wear by attrition, and resulting filled polymers that exhibit significantly improved thermal conductivity. The boron nitride-containing aggregates are prepared according to a method that includes wet granulating boron nitride powder with a granulation solution to form wet boron nitride-containing granules; and drying the wet boron nitride-containing granules to cause evaporation of solvent in the granulation solution, thereby forming boron nitride-containing granules. Sintering achieves the desired boron nitride-containing aggregates.

Shock absorbing member

A shock absorbing member 50 having a ceramic bonded body 15 having: a plurality of first sheet-like members 5 each having a ceramic containing 60 mass % or more of boron carbide and each having a thickness of 0.1 to 50 mm; and a bonding layer arranged between the first sheet-like members 5 adjacent to each other, the bonding layer bonding surfaces to be bonded facing each other of the first sheet-like members adjacent to each other, wherein the bonding layer has a bonding material containing at least one metal selected from the group consisting of aluminum, copper, silver, and gold.

COMPOSITE FORMED OF CUBIC BORON NITRIDE AND METHOD OF MAKING THEREOF
20220048826 · 2022-02-17 ·

A cubic boron nitride (cBN)-based composite including about 30-65 vol. % cBN, about 15-45 vol. % titanium (Ti)-containing binders, about 2-20 vol. % zirconium dioxide (ZrO.sub.2), about 3-15 vol. % cobalt-tungsten-borides (Co.sub.xW.sub.yB.sub.z), and about 2-15 vol. % aluminum oxide (Al.sub.2O.sub.3).

REFRACTORY PRODUCT, BATCH FOR PRODUCING THE PRODUCT, METHOD FOR PRODUCING THE PRODUCT, AND USE OF THE PRODUCT

The invention relates to a refractory product, a batch for producing the product, a method for producing the product, and a use of the refractory product.

Method of treating a preceramic material
09745226 · 2017-08-29 · ·

A method of treating a preceramic material includes providing a preceramic polycarbosilane or polycarbosiloxane material that includes a moiety Si—O-M, where Si is silicon, O is oxygen and M is at least one metal that includes at least one transition metal, and thermally converting the preceramic polycarbosilane or polycarbosiloxane that includes the moiety Si—O-M material into a ceramic material.

Titanium oxide, conductive titanium oxide, and processes for producing these

Titanium dioxide and an electro-conductive titanium oxide which each includes particles having a large major-axis length in a large proportion and comprises columnar particles having a satisfactory particle size distribution. A titanium compound, an alkali metal compound, and an oxyphosphorus compound are heated/fired in the presence of titanium dioxide nucleus crystals having an aspect ratio of 2 or higher to grow the titanium dioxide nucleus crystals. Subsequently, a titanium compound, an alkali metal compound, and an oxyphosphorus compound are further added and heated/fired in the presence of the grown titanium dioxide nucleus crystals. Thus, titanium dioxide is produced which comprises columnar particles having a weight-average major-axis length of 7.0-15.0 μm and in which particles having a major-axis length of 10 μm or longer account for 15 wt. % or more of all the particles. A solution of a tin compound and a solution of compounds of antimony, phosphorus, etc. are added to a suspension obtained by suspending the titanium dioxide. The particles are sedimented. Subsequently, the product obtained is heated/fired to produce an electro-conductive titanium oxide which comprises the titanium dioxide and an electro-conductive coating formed on the surface thereof.

GALLIUM NITRIDE-BASED SINTERED BODY AND METHOD FOR MANUFACTURING SAME

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.