Patent classifications
C04B2235/3895
Tungsten Silicide Target And Method Of Manufacturing Same
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 m or more per 80000 mm.sup.2 on the sputtering surface.
SILICON OXYCARBIDE ENVIRONMENTAL BARRIER COATING
An article includes a ceramic-based substrate and a barrier layer on the ceramic-based substrate. The barrier layer includes a matrix of barium-magnesium alumino-silicate or SiO.sub.2, a dispersion of silicon oxycarbide particles in the matrix, and a dispersion of particles, of the other of barium-magnesium alumino-silicate or SiO.sub.2, in the matrix.
Self-healing environmental barrier coating
An environmental barrier coating, comprising a substrate containing silicon; an environmental barrier layer applied to the substrate; the environmental barrier layer comprising an oxide matrix; an oxidant getter phase interspersed throughout the oxide matrix; and a self-healing phase interspersed throughout the oxide matrix.
SINTERED MATERIAL AND METHOD OF PRODUCING SAME
A sintered material includes a first phase and a second phase, wherein the first phase is composed of cubic boron nitride particles, and the following relational expressions are satisfied when more than or equal to two cubic boron nitride particles adjacent to and in direct contact with each other among the cubic boron nitride particles are defined as a contact body, Di represents a length of an entire perimeter of the contact body, n represents the number of contact locations at which the cubic boron nitride particles are in direct contact with each other, d.sub.k represents a length of each of the contact locations, and d.sub.k (where k=1 to n) represents a total length of the contact locations: Dii=Di+(2d.sub.k (where k=1 to n)); and [(DiiDi)/Dii]10050.
THERMAL CONDUCTIVE MEMBER AND HEAT DISSIPATION STRUCTURE INCLUDING THE SAME
A thermal conductive member includes: first and second surface layers including an insulating material A, and an intermediate layer including an insulating material B. The insulating material A includes a first boron nitride sintered body having an orientation degree of hexagonal boron nitride primary particles of 0.6 to 1.4, and a first heat curable resin composition impregnating in the first boron nitride sintered body. The insulating material B includes a second boron nitride sintered body having an orientation degree of hexagonal boron nitride primary particles of 0.01 to 0.05, and a second heat curable resin composition impregnating in the second boron nitride sintered body.
SILICON OXYCARBIDE ENVIRONMENTAL BARRIER COATING
An article includes a ceramic-based substrate and a barrier layer on the ceramic-based substrate. The barrier layer includes a matrix of barium-magnesium alumino-silicate or SiO.sub.2, a dispersion of silicon oxycarbide particles in the matrix, and a dispersion of particles, of the other of barium-magnesium alumino-silicate or SiO.sub.2, in the matrix.
Polycrystalline dielectric thin film and capacitance element
A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1).sub.1-xM(2).sub.x)(M(3).sub.1-yM(4).sub.y)(O.sub.1-zN.sub.z).sub.3. 0x1, 0y1, and 0<z< are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of the oxynitride includes an octahedron structure including a center atom, two 4a site atoms, and four 8h site atoms. The center atom is M(3) or M(4). The 4a site atom is O atom or N atom. The 8h site atom is O atom or N atom. An angle formed between a straight line connecting two 4a site atoms and a c-axis direction of the crystal structure in the octahedron structure satisfies 0.512.
Aluminum nitride powders
Aluminum nitride crystal particles, aluminum nitride powders containing the same, production processes for both of them, an organic polymer composition comprising the aluminum nitride crystal particles and a sintered body. Each of the aluminum nitride crystal particles has a flat octahedral shape in a direction where hexagonal faces are opposed to each other, which is composed of two opposed hexagonal faces and 6 rectangular faces, in which the average distance D between two opposed corners of each of the hexagonal faces is 3 to 110 m, the length L of the short side of each of the rectangular faces is 2 to 45 m, and L/D is 0.05 to 0.8; each of the hexagonal faces and each of the rectangular faces cross each other to form a curve without forming a single ridge; and the true destiny is 3.20 to 3.26 g/cm.sup.3.
Pseudo-ternary thermoelectric material, method of manufacturing the same, thermoelectric element, and thermoelectric module
Disclosed are a pseudo-ternary thermoelectric material, a method of manufacturing the pseudo-ternary thermoelectric material, a thermoelectric element, and a thermoelectric module. The pseudo-ternary thermoelectric material includes bismuth (Bi), antimony (Sb), tellurium (Te), and selenium (Se), and a composition ratio thereof is Bi.sub.xSb.sub.2-xTe.sub.3 in which 0.3x0.6 or (Bi.sub.2Te.sub.3).sub.1-x-y(Sb.sub.2Te.sub.3).sub.x(Sb.sub.2Se.sub.3).sub.y in which 0<x<1 and 0.001y0.05.
COMPLEX COMPOSITE PARTICLES AND METHODS
A complex composite particle is made of a coal dust and binder composite that is pyrolyzed. Constituent portions of the composite react together causing the particles to increase in density and reduce in size during pyrolyzation, yielding a particle suitable for use as a proppant or in a composite structure.