A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and niobium (Nb) as first accessory ingredients. A total content of the Dy and Nb is less than or equal to 1.5 mol, based on 100 mol of Ti of the base material main ingredient, and a content of the Dy satisfies 0.7 mol<Dy<1.1 mol, based on 100 mol of Ti of the base material main ingredient.

Provided is a Mn—Ta—W—Cu—O-based sputtering target including, in the component composition, Mn, Ta, W, Cu, and O. The sputtering target has a relative density of at least 90%, and includes a crystal phase of Mn.sub.4Ta.sub.2O.sub.9. Also provided is a production method for the sputtering target.

Methods of producing silicon carbide, and other metal carbide materials. The method comprises reacting a carbon material (e.g., fibers, or nanoparticles, such as powder, platelet, foam, nanofiber, nanorod, nanotube, whisker, graphene (e.g., graphite), fullerene, or hydrocarbon) and a metal or metal oxide source material (e.g., in gaseous form) in a reaction chamber at an elevated temperature ranging up to approximately 2400° C. or more, depending on the particular metal or metal oxide, and the desired metal carbide being produced. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01×10.sup.2 Pascal, and overall pressure is maintained at approximately 1 atm.

In a multilayer ceramic capacitor, an intersection of an interface is defined by a second dielectric ceramic layer, a first internal electrode layer or a second internal electrode layer, and a third dielectric ceramic layer, on a plane including a length direction and a width direction, the second dielectric ceramic layer and the third dielectric ceramic layer include a near intersection region at or near the intersection, and an average particle size of dielectric particles in the near intersection region is smaller than average particle sizes of dielectric particles in the first dielectric ceramic layer, the second dielectric ceramic layer, and the third dielectric ceramic layer.

A dielectric composition includes a main phase and a Ca—Si—P—O segregation phase. The main phase includes a main component expressed by ABO.sub.3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Si—P—O segregation phase includes at least calcium, silicon, and phosphorus.

A ceramic particle includes a core and a modification layer. The core is made of magnesium or a magnesium alloy. The core has a diameter of 30-100 μm. The modification layer covers an outer surface of the core. The modification layer includes calcium and phosphorus. A method for producing a ceramic particle includes providing a core made of magnesium or a magnesium alloy and having a diameter of 30-100 μm. A calcium salt and a phosphorus salt are dissolved in a solvent. A chelating agent is added into the solvent to form a modifying solution. The core is added into the modifying solution to form a modification layer on an outer surface of the core in a temperature range of 5-40° C. The modification layer includes calcium and phosphorus.

A porous honeycomb heat storage structure including: a honeycomb structure which has a porous partition wall which defines a plurality of cells extending one end face to the other end face and allows a reaction medium to flow into the cells; and a heat storage portion which is configured by filling a heat storage material performing heat storage and heat dissipation by a reversible chemical reaction with the reaction medium or physical adsorption/desorption in at least a portion of each cells, wherein the heat storage portion has an area ratio in a range from 60% to 90% with respect to a cross sectional area of a honeycomb cross section orthogonal to an axial direction of the honeycomb structure.

Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite. Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 m or more and 800 m or less, 20-30 mass % of silicon carbide having a particle diameter of 8 m or more and less than 80 m, and 5-10 mass % of silicon carbide having a particle diameter of less than 8 m.

Described herein are composite materials composed of ceramic particles coated with a surfactant incorporated within a polymer matrix, methods of making same, filaments composed of the same, and articles printed using the filaments. The composite materials and articles described herein have desirable electronic and thermal properties for use in radio frequency (RF) and millimeter wave devices and demonstrate reliable performance at elevated humidity levels.

Provided is a method for preparing a graphene-copper calcium titanate CCTO based ceramic composite dielectric material, which includes: dissolving metal ion sources in respective solvents to obtain respective solutions, and mixing the solutions evenly to obtain a precursor collosol of the CCTO based ceramic; allowing the precursor collosol of the CCTO based ceramic to stand for aging, followed by adding a graphene oxide dispersion to mix with the precursor collosol evenly, drying the resulting mixture to obtain dry precursor powders of the graphene-CCTO based ceramic, which are then grinded into fine powders, followed by irradiating by a low-power laser to obtain graphene-CCTO based ceramic composite powders; and compacting and molding the graphene-CCTO based ceramic composite powders, followed by catalytic synthesis with a high-power laser to obtain the graphene-CCTO based ceramic composite dielectric material.