Patent classifications
C04B2235/408
Carbon nanotube sheet structure and method for its making
A carbon nanotube (CNT) sheet containing CNTs, arranged is a randomly oriented, uniformly distributed pattern, and having a basis weight of at least 1 gsm and a relative density of less than 1.5. The CNT sheet is manufactured by applying a CNT suspension in a continuous pool over a filter material to a depth sufficient to prevent puddling of the CNT suspension upon the surface of the filter material, and drawing the dispersing liquid through the filter material to provide a uniform CNT dispersion and form the CNT sheet. The CNT sheet is useful in making CNT composite laminates and structures having utility for electro-thermal heating, electromagnetic wave absorption, lightning strike dissipation, EMI shielding, thermal interface pads, energy storage, and heat dissipation.
Porous honeycomb heat storage structure
A porous honeycomb heat storage structure including: a honeycomb structure which has a porous partition wall which defines a plurality of cells extending one end face to the other end face and allows a reaction medium to flow into the cells; and a heat storage portion which is configured by filling a heat storage material performing heat storage and heat dissipation by a reversible chemical reaction with the reaction medium or physical adsorption/desorption in at least a portion of each cells, wherein the heat storage portion has an area ratio in a range from 60% to 90% with respect to a cross sectional area of a honeycomb cross section orthogonal to an axial direction of the honeycomb structure.
Magneto-dielectric material comprising hexaferrite fibers, methods of making, and uses thereof
In an embodiment, a magneto-dielectric material comprises a polymer matrix; a plurality of hexaferrite microfibers; wherein the magneto-dielectric material has a permeability of 2.5 to 7, or 2.5 to 5 in an x-direction parallel to a broad surface of the magneto-dielectric material and a magnetic loss tangent of less than or equal to 0.03; as determined at 1 GHz, or 1 to 2 GHz.
Sb—Te-based alloy sintered compact sputtering target
An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.
DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT
Provided is a dielectric composition exhibiting a high specific dielectric constant and a high resistivity even when fired in a reducing atmosphere. The dielectric composition contains a composite oxide having a composition represented by (Sr.sub.xBa.sub.1-x).sub.yNb.sub.2O.sub.5+y, the crystal system of the composite oxide is tetragonal, and y in the composition formula is smaller than 1.
ADDITIVE MANUFACTURING OF MICROANALYTICAL REFERENCE MATERIALS
A method includes acquiring particles doped with at least one analyte and forming a monolithic reference material. The method includes forming includes using the analyte-doped particles as feedstock particles in an additive manufacturing process. A product includes a monolithic reference material formed of Stober particles doped with a trace element. A method includes acquiring particles doped with platinum group elements (PGEs). The method includes forming a monolithic reference material using the PGE-doped particles as feedstock particles in an additive manufacturing process.
Barium titanate foam ceramics loaded with micro/nano silver and preparation method thereof
Disclosed are a micrometer/nanometer silver-loaded barium titanate foam ceramic and a preparation method therefor. An organic additive is used as an auxiliary; deionized water is used as a solvent; nanometer barium titanate is used as a ceramic raw material; and same are mixed and ground so as to form a slurry. A pre-treated polymer sponge is impregnated in the slurry for slurry coating treatment and a barium titanate foam ceramic blank is obtained after drying; and then a barium titanate foam ceramic is obtained through sintering. Through dopamine modification, micrometer/nanometer silver is in-situ deposited on a skeleton surface so as to obtain a modified micrometer/nanometer silver-loaded barium titanate foam ceramic. The modified micrometer/nanometer silver-loaded barium titanate foam ceramic is then put into a newly prepared Tollens' reagent for further reduction so as to obtain a micrometer/nanometer silver-loaded barium titanate foam ceramic with a three-dimensional network skeleton structure.
COMPOSITE MATERIALS BASED ON TUNGSTEN CARBIDE AND HAVING NOBLE METAL BINDERS, AND METHOD FOR PRODUCING SAID COMPOSITE MATERIALS
The invention relates to composite materials based on tungsten carbide and comprising gold, palladium and/or platinum and to a method for producing said composite materials by sintering. By means of the FAST method, hard and biocompatible WC/(Au, Pd, Pt) composite materials can be produced, inter alia for use as coatings on tools and prostheses and as solid bodies in, for example, blood pumps.
PLASTIC SEMICONDUCTOR MATERIAL AND PREPARATION METHOD THEREOF
Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-X.sub.S.sub.1-Y.sub.(I), in which 0<0.5, 0<0.5, Xis at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.
POROUS SHAPED METAL-CARBON PRODUCTS
The present invention provides a porous metal-containing carbon-based material that is stable at high temperatures under aqueous conditions. The porous metal-containing carbon-based materials are particularly useful in catalytic applications. Also provided, are methods for making and using porous shaped metal-carbon products prepared from these materials.