Disclosed herein are compounds, methods, and tools which comprise tungsten borides and mixed transition metal borides.

A silicon carbide porous body contains β-SiC particles, Si particles, and metal silicide particles. The maximum particle diameter of the β-SIC particles is not smaller than 15 μm. The content of the Si particles is not lower than 10 mass %. The maximum particle diameter of the Si particles is not larger than 40 μm. Further, an oxide coating film having a thickness not smaller than 0.01 μm and not larger than 5 μm is provided on surfaces of the Si particles.

A polycrystalline diamond compact useful for wear, cutting, drilling, drawing and like applications is provided with a first diamond region remote from the working surface which has a metallic catalyzing material and a second diamond region adjacent to or including the working surface containing a non-metallic catalyst and the method of making such a compact is provided. This compact is particularly useful in high temperature operations, such as hard rock drilling because of the improved thermal stability at the working surface.

The disclosure describes a method for forming a surface layer of a ceramic matrix composite (CMC) article. The technique includes depositing a slurry on a surface of an infiltrated CMC. The slurry includes a carrier material, a binder, a plasticizer, and solid particles. The solid particles include a plurality of fine ceramic particles defining a fine particle average size less than about 5 micrometers. The method further includes drying the slurry to form an article having an outer surface layer that includes the solid particles on the infiltrated CMC. The method further includes machining at least a portion of the outer surface layer of the article. The method further includes infiltrating the article with a molten infiltrant to form a composite article.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

A ceramic article includes a ceramic matrix composite that has a porous reinforcement structure and a ceramic matrix within pores of the porous reinforcement structure. The ceramic matrix composite includes a surface zone comprised of an exterior surface of the ceramic matrix composite and pores that extend from the exterior surface into the ceramic matrix composite. A glaze material seals the surface zone within the pores of the surface zone and on the exterior surface of the surface zone as an exterior glaze layer on the ceramic matrix composite. The glaze material is a glass or glass-ceramic material. The ceramic matrix composite includes an interior zone under the surface zone, and the interior zone is free of any of the glaze material and has a greater porosity than the surface zone.

A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element.

High quality, catalyst-free boron nitride nanotubes (BNNTs) that are long, flexible, have few wall molecules and few defects in the crystalline structure, can be efficiently produced by a process driven primarily by Direct Induction. Secondary Direct Induction coils, Direct Current heaters, lasers, and electric arcs can provide additional heating to tailor the processes and enhance the quality of the BNNTs while reducing impurities. Heating the initial boron feed stock to temperatures causing it to act as an electrical conductor can be achieved by including refractory metals in the initial boron feed stock, and providing additional heat via lasers or electric arcs. Direct Induction processes may be energy efficient and sustainable for indefinite period of time. Careful heat and gas flow profile management may be used to enhance production of high quality BNNT at significant production rates.

One embodiment of the present invention provides a conductive ceramic composition comprising: conductive non-oxide ceramic particles; oxide ceramic particles electrostatically bonded or co-dispersed with the non-oxide ceramic particles; and a binder resin.

Disclosed is a method for making a ceramic matrix composite. The method includes infiltrating an initial ceramic matrix composite with a molten silicon infiltration material to form a silicon infiltrated composite; cooling the silicon infiltrated composite; heating a first portion of the cooled silicon infiltrated composite to a temperature in excess of the melt temperature of the silicon infiltration material in the presence of a carbon source; heating a second portion of the cooled silicon infiltrated composite to a temperature in excess of the melt temperature of the silicon infiltration material in the presence of a carbon source after heating the first portion; and cooling the heated portions to form a final ceramic matrix composite, wherein the first portion and second portion of the cooled silicon infiltrated composite are adjacent or overlap.