A ceramic raw material powder includes: ceramic particles having a perovskite structure containing barium, a mean particle diameter of the ceramic particles being 80 nm or greater and 150 nm or less; and chlorine, wherein a concentration of the chlorine to a B site element of the ceramic particles is 0.2 atm % or greater and 1.1 atm % or less.

A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, the plurality of internal electrode layers being alternately exposed to a first end face and a second end face of the multilayer structure. A bent portion, in which the plurality of dielectric layers in a substantially same position along a stacking direction project along the stacking direction, is formed in the multilayer chip. In the bent portion, a through-hole is formed in two or more of the plurality of internal electrode layers. The through-hole is a defect portion in a first direction in which the first end face faces with the second end face and in a second direction that is vertical to the first direction in a plane of the plurality of internal electrode layers.

The invention provides a lighting device comprising a plurality of solid state light sources and an elongated ceramic body having a first face and a second face defining a length (L) of the elongated ceramic body, the elongated ceramic body comprising one or more radiation input faces and a radiation exit window, wherein the second face comprises the radiation exit window, wherein the plurality of solid state light sources are configured to provide blue light source light to the one or more radiation input faces and are configured to provide to at least one of the radiation input faces a photon flux of at least 1.0*10.sup.17 photons/(s.Math.mm.sup.2), wherein the elongated ceramic body comprises a ceramic material configured to wavelength convert at least part of the blue light source light into at least converter light, wherein the ceramic material comprises an A.sub.3B.sub.5O.sub.12:Ce.sup.3+ ceramic material, wherein A comprises one or more of yttrium (Y), gadolinium (Gd) and lutetium (Lu), and wherein B comprises aluminum (Al).

A filter for the filtration of a fluid, such as a liquid, includes or is composed of a support element made of a porous ceramic material, the element exhibiting a tubular or parallelepipedal shape delimited by an external surface and including, in its internal portion, a set of adjacent channels with axes parallel to one another and separated from one another by walls of the porous inorganic material, in which at least a portion of the channels and/or at least a portion of the external surface are covered with a porous separating membrane layer, wherein the separating membrane layer is made of a material essentially composed of silicon carbide (SiC), and the content by weight of elemental nitrogen of the layer constituting the porous separating membrane layer is between 0.1% and 2%.

A piezoelectric ceramic containing a perovskite-type compound containing at least Pb, Zr, Ti, Mn, and Nb, in which in an X-ray crystal structure analysis chart of the perovskite-type compound, there is no X-ray diffraction peak branching between a (101) plane of a main peak of a PZT tetra phase in a range of 2θ=30.5° to 31.5° and a (110) plane on which an X-ray diffraction peak is in a range of 2θ=30.8° to 31.8°, and a number of X-ray diffraction peaks based on the (101) plane and the (110) plane is one.

A multilayer ceramic capacitor includes: a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked. A ceramic protection section includes a cover layer and a side margin. A main component ceramic of the ceramic protection section is a ceramic material having a perovskite structure expressed as a general formula ABO.sub.3. An A site of the perovskite structure includes at least Ba. A B site of the perovskite structure includes at least Ti and Zr. A Zr/Ti ratio which is a molar ratio of Zr and Ti is 0.010 or more and 0.25 or less. An A/B ratio which is a molar ratio of the A site and the B site is 0.990 or less.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Provided are a molding step (A) of preparing an alumina molded body 11 from a molding raw material which contains an alumina raw material powder having an average particle size of 2 m to 5 m and a molding additive, and a sintering step (B) of preparing an alumina molded body 12, which becomes a spark plug insulator 1, by sintering the alumina molded body 11. At the sintering step (B), the alumina molded body 11 is conveyed to a continuous furnace 100 provided with a heating zone Z1 which is heated to 700 C. to 1600 C. by a heating means 401, followed by introducing oxygen gas to control the heating zone Z1 to have a high oxygen atmosphere with an oxygen concentration exceeding 20 mol %.

The present disclosure relates to polycrystalline cubic boron nitride (PCBN) with enhanced impact-resistance and wear-resistance and a method for producing the PCBN. According to the present disclosure, producing the polycrystalline cubic boron nitride with one or more kinds of protrusion-shaped borides formed on the cubic boron nitride surface may inhibits the development of cracks along the surfaces of the cubic boron nitride particles and binders, thereby to improve the impact-resistance and wear-resistance. In this way, the life-span of the machining tools may be enhanced. Further, the polycrystalline cubic boron nitride may have at least one kind of a compound composed of at least two selected from the group consisting of BN, Ti, W, Co, Zr, and Si as formed during sintering. This may allow the PCBN to have high bonding strength between the cubic boron nitride and the binder.

A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200 C. is provided.