Provided is a dielectric composition containing: a main component expressed by {Ba.sub.xSr.sub.(1-x)}.sub.mTa.sub.4O.sub.12; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and manganese. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of SiO.sub.2, and the amount of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.

Set forth herein are processes and materials for making ceramic thin green tapes by casting ceramic source powders and precursor reactants, binders, and functional additives into unsintered thin green tapes in a non-reactive environment.

A ceramic electronic device includes a multilayer structure in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked. Each of the plurality of dielectric layers includes ceramic grains of a main component thereof expressed by (Ba.sub.1−x−yCa.sub.xSr.sub.y)(Ti.sub.1−zZr.sub.z)O.sub.3 (0<x≤0.2, 0≤y≤0.1, 0≤z≤0.1). D3<D1<D2 is satisfied when an average grain diameter of the ceramic grains of the main component of the plurality of dielectric layers in a section in which each two internal electrode layers is D1, an average grain diameter of the ceramic grains of the main component of first dielectric layers which are located at different height positions from the internal electrode layers is D2, an average grain diameter of the ceramic grains of the main component of second dielectric layers which are located at same height positions of the internal electrode layers is D3.

A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200° C. is provided.

A dielectric composition includes a main phase and a Ca—Si—P—O segregation phase. The main phase includes a main component expressed by ABO.sub.3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Si—P—O segregation phase includes at least calcium, silicon, and phosphorus.

The invention discloses a sound-absorbing material particle and a preparation method thereof. The method for preparing the sound-absorbing material particle comprises: mixing a sound-absorbing raw material with a solvent to form a sound-absorbing slurry; filling the sound-absorbing slurry into a mechanical compression die, and performing compression molding on the sound-absorbing slurry to form a particle; performing a hydrothermal crystallization reaction on the particle to crystallize the sound-absorbing raw material in the particle; and drying the particle to produce the sound-absorbing material particle.

Methods of producing a ceramic article include heating the ceramic green body containing a quantity of one or more organic materials to extract only a fraction of the organic materials from the ceramic green body by exposing the ceramic green body to a process atmosphere which is heated to a hold temperature of from 225° C. to about 400° C. and has from 2% to 7% O.sub.2 by volume of the process atmosphere. The method further includes cooling the ceramic green body to a temperature of below 200° C., exposing the ceramic green body to a higher concentration of O.sub.2 than in the process atmosphere of the heating step, and firing the ceramic green body to form the ceramic article. Volatile extraction units for implementing the methods are also described.

A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, the plurality of internal electrode layers being alternately exposed to a first end face and a second end face of the multilayer structure. A bent portion, in which the plurality of dielectric layers in a substantially same position along a stacking direction project along the stacking direction, is formed in the multilayer chip. In the bent portion, a through-hole is formed in two or more of the plurality of internal electrode layers. The through-hole is a defect portion in a first direction in which the first end face faces with the second end face and in a second direction that is vertical to the first direction in a plane of the plurality of internal electrode layers.

A ceramic electronic component includes a multilayer structure including dielectric layers and internal electrode layers, the internal electrode layers being alternately exposed to two edge faces of the multilayer chip opposite to each other. A rare earth element of a side margin has an ionic radius smaller than that of a rare earth element of a capacity section. The rare earth element of the side margin is a rare earth element when only the rare earth element is added to the side margin, or a rare earth element with a largest amount when rare earth elements are added to the side margin. The rare earth element of the capacity section is a rare earth element when only the rare earth element is added to the capacity section, or a rare earth element with a largest amount when rare earth elements are added to the capacity section.

A carbon foam comprising linear portions and node portions joining the linear portions, wherein the linear portions have a diameter of 0.1 μm or more and 10.0 μm or less, and the carbon foam has a surface with an area of 100 cm.sup.2 or more.