There is provided an aluminum/ceramic bonding substrate having a ceramic substrate, an aluminum plate of an aluminum alloy which is bonded directly to one side of the ceramic substrate, an aluminum base plate of the aluminum alloy which is bonded directly to the other side of the ceramic substrate, and a plate-shaped reinforcing member which has a higher strength than that of the aluminum base plate and which is arranged in the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.

An ink of the formula: 60-80% by weight BaTiO.sub.3 particles coated with SiO.sub.2; 5-50% by weight high dielectric constant glass; 0.1-5% by weight surfactant; 5-25% by weight solvent; and 5-25% weight organic vehicle. Also a method of manufacturing a capacitor comprising the steps of: heating particles of BaTiO.sub.3 for a special heating cycle, under a mixture of 70-96% by volume N.sub.2 and 4-30% by volume H.sub.2 gas; depositing a film of SiO.sub.2 over the particles; mechanically separating the particles; incorporating them into the above described ink formulation; depositing the ink on a substrate; and heating at 850-900° C. for less than 5 minutes and allowing the ink and substrate to cool to ambient in N.sub.2 atmosphere. Also a dielectric made by: heating particles of BaTiO.sub.3 for a special heating cycle, under a mixture of 70-96% by volume N.sub.2 and 4-30% by volume H.sub.2 gas; depositing a film of SiO.sub.2 over the particles; mechanically separating the particles; forming them into a layer; and heating at 850-900° C. for less than 5 minutes and allowing the layer to cool to ambient in N.sub.2 atmosphere.

Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing:

a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less:

A.sub.1+δ[(Zr.sub.xTi.sub.1−a).sub.1−aNb.sub.a]O.sub.y  Formula P

wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.

The present invention discloses a dielectric ceramic formula enabling one to obtain a multilayer ceramic capacitor by alternatively stacking the ceramic dielectric layers and base metal internal electrodes. The dielectric ceramic composition comprises a primary ingredient:

[(Na.sub.1-xK.sub.x).sub.sA.sub.1-s].sub.m[(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]O.sub.3

wherein:
A is at least one selected from the alkaline-earth element group of Mg, Ca, Sr, and Ba;
B1 is at least one selected from the group of Ti, Zr, Hf and Sn;
B2 is at least one selected from transition metal elements;
and wherein:
x, y, s, u, v, and w are molar fractions of respective elements, and m is the molar ratio of [(Na.sub.1-xK.sub.x).sub.sA.sub.1-s] and [(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]. They are in the following respective range:
0.93≤m≤1.07;
0.7≤s≤1.0;
0.00≤x≤0.05; 0.00≤y≤0.65;
0.7≤u≤1.0; 0.0≤v≤0.3; 0.001≤w≤0.100;
a first sub-component composes of at least one selected from the rare-earth compound,
wherein the rare-earth element is no more than 10 mol % parts with respect to the main component; and
a second sub-component composes a compound with low melting temperature to assist the ceramic sintering process, said frit, which is Li free and could be at least one selected from fluorides, silicates, borides, and oxides. The content of frit is within the range of 0.01 mol % to 15.00 mol % parts with respect to the main component.

A ceramic electronic device includes a multilayer structure in which each of a plurality of dielectric layers of which a main component is ceramic and each of three or more of internal electrode layers are alternately stacked. The three or more of internal electrode layers include Ni and Sn. An internal electrode layer having a larger Sn concentration is closer to an outermost edge in a stacking direction than an internal electrode layer having a smaller Sn concentration and being located on a center side of the stacking direction, in a relationship of at least two of the three or more of internal electrode layers.

One aspect relates to a process for producing a sintered workpiece, which includes sintering of a ceramic material at a temperature of at least 1000° C. and in an atmosphere, in the case of which the partial pressure of atmospheric air is reduced to less than 10.sup.−6-times, based on the ambient air at the same temperature under equilibrium conditions.

In order to provide a dielectric composition having high density even when fired at a relatively low temperature, the main component of a dielectric composition includes tantalum and at least one of barium or strontium, and the subcomponent of the dielectric composition includes at least one element selected from the group consisting of vanadium, titanium, and aluminum.

electrically conductive honeycomb body that includes a porous honeycomb structure including a plurality of intersecting porous walls arranged to provide a matrix of cells, the porous walls including wall surfaces that define a plurality of channels extending from an inlet end to an outlet end of the structure. The porous walls include ceramic composite material that includes at least one carbide phase and at least one silicide phase, each carbide and silicide phase including one or more metals selected from the group consisting of Si, Mo, Ti, Zr and W.

A multilayer ceramic capacitor includes a multilayer structure having a substantially rectangular parallelepiped shape and including dielectric layers and internal electrode layers that are alternately stacked, the dielectric layers being mainly composed of BaTiO.sub.3, the internal electrode layers being alternately exposed to two edge faces of the multilayer chip opposite to each other. A Zr/Ti ratio is 0.02 or more and 0.10 or less in a capacity section. A Ba/Ti ratio is more than 0.900 and less than 1.010 in the capacity section. A Eu/Ti ratio is 0.005 or more and 0.05 or less in the capacity section. A Mn/Ti ratio is 0.0005 or more and 0.05 or less in the capacity section. A total amount of a rare earth element or rare earth elements is less than the amount of Eu.

A dielectric ceramic composition contains dielectric particles containing a main component represented by a composition formula (Ba.sub.1-x-ySr.sub.xCa.sub.y).sub.m(Ti.sub.1-zZr.sub.z)O.sub.3 and grain boundaries present between the dielectric particles. The values of m, x, y, and z in the composition formula are all molar ratios. In the composition formula, 0.9≤m≤1.4, 0≤x<1.0, 0<y≤1.0, 0.9≤(x+y)≤1.0, and 0.9≤z≤1.0 are satisfied. The dielectric particles contain specific structural particles having a predetermined intragranular structure, and each of the specific structural particles intragranularly includes a first region and a second region having different Ca concentrations from each other. C2/C1 is less than 0.8 in which C1 is an average value of the Ca concentration in the first region and C2 is an average value of the Ca concentration in the second region.