Set forth herein are processes and materials for sintering dense thin green films comprising lithium-stuffed garnet powder and a binder to obtain sintered lithium-stuffed garnet thin films. Some of the processes, herein, include providing a first setter and a second setter, wherein the first setter and second setter each include at least 5 atomic % lithium (Li) per setter; placing the green film on the first setter; placing the second setter within 2 cm of the green film but not in contact with the green film; and heating the green film to at least 900 C.

A manufacturing method of a multilayer ceramic electronic device includes: forming each of stack units by forming each of internal electrode patterns on each of dielectric green sheets, the each of internal electrode patterns including Ni, Sn and Au; forming a multilayer structure by stacking the each of stack units; and firing the multilayer structure, whereby each internal electrode layer is formed from the each of internal electrode patterns and each dielectric layer is formed from the each of the dielectric green sheets wherein, in the each internal electrode layer, an Au concentration near each interface between the each internal electrode layer and the each dielectric layer is larger than an Au concentration in each center portion in a thickness direction.

The invention relates to a process for producing a metal-ceramic substrate (1), comprising: —providing a ceramic element (10), a metal ply (40) and at least one metal layer (30), —forming an ensemble (18) of the ceramic element (10), the metal ply (40) and the at least one metal layer (30), —forming a gas-tight container (30) surrounding the ceramic element (10), wherein the at least one metal layer (30) is arranged between the ceramic element (10) and the metal ply (40) in the container, and—forming the metal-ceramic substrate (1) by hot isostatic pressing.

A sintered ferrite magnet having a composition of metal elements of Ca, R, A, Fe and Co, which is represented by the general formula of Ca.sub.1−x−yR.sub.xA.sub.yFe.sub.2n−zCo.sub.z, wherein R is at least one of rare earth elements indispensably including La; A is Sr and/or Ba; x, y, z and n represent the atomic ratios of Ca, R, A, Fe and Co; 2n represents a molar ratio expressed by 2n=(Fe+Co)/(Ca+R+A); and x, y, z and n meet the conditions of 0.15≤x≤0.35, 0.05≤y≤0.40, (1−x−y)>y, 0<z≤0.18, and 7.5≤(2n−z)<11.0.

A sintered MnZn ferrite comprising as main components 53.5 to 54.3% by mol of Fe calculated as Fe.sub.2O.sub.3, and 4.2 to 7.2% by mol of Zn calculated as ZnO, the balance being Mn calculated as MnO, and comprising as sub-components 0.003 to 0.018 parts by mass of Si calculated as SiO.sub.2, 0.03 to 0.21 parts by mass of Ca calculated as CaCO.sub.3, 0.40 to 0.50 parts by mass of Co calculated as Co.sub.3O.sub.4, 0 to 0.09 parts by mass of Zr calculated as ZrO.sub.2, and 0 to 0.015 parts by mass of Nb calculated as Nb.sub.2O.sub.5, per 100 parts by mass in total of the main components (calculated as the oxides), C.sub.(zn)/C.sub.(co) being 9.3 to 16.0 wherein C.sub.(zn) is the content of Zn contained as a main component (% by mol calculated as ZnO in the main components), and C.sub.(co) is the content of Co contained as a sub-component (parts by mass calculated as Co.sub.3O.sub.4 per 100 parts by mass in total of the main components).

A multilayer ceramic capacitor includes a multilayer structure having a substantially rectangular parallelepiped shape and including dielectric layers and internal electrode layers that are alternately stacked, the dielectric layers being mainly composed of BaTiO.sub.3, the internal electrode layers being alternately exposed to two edge faces of the multilayer chip opposite to each other. A Zr/Ti ratio is 0.02 or more and 0.10 or less in a capacity section. A Ba/Ti ratio is more than 0.900 and less than 1.010 in the capacity section. A Eu/Ti ratio is 0.005 or more and 0.05 or less in the capacity section. A Mn/Ti ratio is 0.0005 or more and 0.05 or less in the capacity section. A total amount of a rare earth element or rare earth elements is less than the amount of Eu.

A DC conductive, low RF/microwave loss titanium oxide ceramic provides, at room temperature, a bulk DC resistivity of less than 1×10.sup.11 ohm-meters and an RF loss tangent of less than 2×10.sup.−4 at 7.5 GHz and less than 2×10.sup.−5 at 650 MHz. The resistivity is reduced by oxygen vacancies and associated Ti.sup.3+ and/or Ti.sup.4+ centers created by sintering in an atmosphere containing only between 0.01% and 0.1% oxygen. The reduced resistivity prevents DC charge buildup, while the low loss tangent provides good RF/microwave transparency and low losses. The ceramic is suitable for forming RF windows, electron gun cathode insulators, dielectrics, and other components. An exemplary Mg.sub.2TiO.sub.4—MgTiO.sub.3 embodiment includes mixing, grinding, pre-sintering in air, and pressing 99.95% pure MgO and TiO.sub.2 powders, re-sintering in air at 1400° C.-1500° C. to reduce porosity, and sintering at 1350° C.-1450° C. for 4 hours in an 0.05% oxygen and 99.05% nitrogen atmosphere.

A dielectric composition includes dielectric particles. At least one of the dielectric particles include a main phase and a secondary phase. The main phase has a main component of barium titanate. The secondary phase exists inside the main phase and has a higher barium content than the main phase.

A dielectric ceramic composition includes main component grains having a perovskite structure represented by a formula AMO.sub.3. “A” includes Ba. “M” includes Ti. The dielectric ceramic composition includes a 4A subcomponent. The 4A subcomponent includes Fe and Mn. A molar ratio of Mn to a total of Fe and Mn in terms of a metal element is 0.18 to 0.65.

The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder. The silicon nitride substrate in an unpolished state after sintering is a silicon nitride sintered substrate where a cumulative volume of pores having a diameter in a range of 1 to 10 μm is not more than 7.0'10.sup.−5 mL/cm.sup.2 in a measurement by a mercury porosimetry. Preferably, Ra of the surface is not more than 0.6 μm and arithmetic mean peak curvature (Spc) of a peak is not more than 4.5 [l/mm].