A ferrite composition having a formula of Ba.sub.xNi.sub.2-yCu.sub.yTi.sub.3Fe.sub.zO.sub.31, wherein 4.5?x?5.5 0<y<2 or 0.05?y?1.5, and 11?z?13.

A method for producing an optical wavelength conversion member (9) composed of a sintered body containing, as main components, Al.sub.2O.sub.3 and a component represented by formula A.sub.3B.sub.5O.sub.12:Ce; an optical wavelength conversion member; an optical wavelength conversion component including the optical wavelength conversion member; and a light-emitting device including the optical wavelength conversion member or the optical wavelength conversion component. The production method of the sintered body includes firing in a firing atmosphere having a pressure of 10.sup.4 Pa or more and an oxygen concentration of 0.8 vol. % or more and less than 25 vol. %.

Scintillator materials based on mixed garnet compositions, as well as corresponding methods and systems, are described.

The present disclosure is related to a method of producing a fired ceramic article. The method may include: heating a ceramic green body in a kiln, and controlling oxygen concentration in the kiln such that the oxygen concentration swings during the heating of the ceramic green body.

There is provided a piezoelectric stack including: a substrate having a main surface with a diameter of 3 inches or more; and a piezoelectric film on the substrate, comprising a perovskite-type alkali niobium oxide containing potassium, sodium, niobium, and oxygen, wherein, a half-value width of an X-ray rocking curve of (001) is within a range of 0.5? or more and 2.5? or less over an entire area of an inside of a main surface of the piezoelectric film excluding its periphery when performing X-ray diffraction measurement on the piezoelectric film.

A light-emitting ceramic that includes a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of ABO.sub.W, and one co-added element selected from the group consisting of Mg, Ca, Zn, Sr, Ba, Sc, Ga, In, Yb, and Lu. The A site contains at least one selected from the group consisting of La, Y, and Gd in a total amount of 80 mol % or more, B contains at least Sn, and W is a positive number for maintaining electrical neutrality.

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

A sputtering target having a composition of LiCoO.sub.2, wherein a resistivity of the target is 100 cm or less, and a relative density is 80% or higher. The sputtering target of the present invention is effective for use in forming a positive electrode thin film in all-solid-state thin-film lithium ion secondary batteries equipped in vehicles, information and communication electronics, household appliances, and the like.

The purpose of the present invention is to provide a sintered oxide to be used for a sputtering target, whereby little abnormal discharge occurs even during high-power film-deposition and no cracking occurs in the target. A sintered oxide having zinc, aluminum, titanium and oxygen, as constituent elements, characterized in that when the contents of zinc, aluminum and titanium are represented by Zn, Al, and Ti, respectively, the atomic ratios of the elements constituting the sintered oxide are
Al/(Zn+Al+Ti)=0.035 to 0.050 and
Ti/(Zn+Al+Ti)=0.05 to 0.20,
and the average grain size of crystal grains having a Zn.sub.2TiO.sub.4 crystal phase as the matrix phase in the sintered oxide, is at most 5 m.

A die or piston of a spark plasma sintering apparatus, wherein the die or piston is made from graphite and the outer surfaces of the die or piston are coated with a silicon carbide layer with a thickness of 1 to 10 micrometres, the silicon carbide layer being further optionally coated with one or more other layer(s) made from a carbide other than silicon carbide chosen from hafnium carbide, tantalum carbide and titanium carbide, the other layer(s) each having a thickness of 1 to 10 micrometres. A spark plasma sintering (SPS) apparatus comprising the die and two of the pistons, defining a sintering, densification or assembly chamber capable of receiving a powder to be sintered, a part to be densified, or parts to be assembled. A method of sintering a powder, densifying a part, or assembling two parts by means of a method of spark plasma sintering (SPS) in an oxidising atmosphere, using the spark plasma sintering (SPS) apparatus.