C04B2235/761

OXIDE SINTERED BODY, SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM

An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

MATERIAL INCLUDING BORON SUBOXIDE AND METHOD OF FORMING SAME
20220009836 · 2022-01-13 ·

A material including a body including B.sub.6O.sub.X can include lattice constant c of at most 12.318. X can be at least 0.85 and at most 1. In a particular embodiment, 0.90≤X≤1. In another particular embodiment, lattice constant a can be at least 5.383 and lattice constant c can be at most 12.318. In another particular embodiment, the body can consist essentially of B.sub.6O.sub.X.

Solid electrolyte for all solid-state lithium-ion battery and manufacturing method therefor

The method for manufacturing a solid electrolyte using an LLZ material for a lithium-ion battery comprises the steps of: providing a starting material in which lanthanum nitrate [La(NO.sub.3).sub.3.6H.sub.2O] and zirconium nitrate [ZrO(NO.sub.3).sub.2.6H.sub.2O] are mixed at a mole ratio of 3:2; forming an aqueous solution by dissolving the starting material; forming a precipitate by putting ammonia, which is a complex agent, and sodium hydroxide, which adjusts the pH of a reactor, into the aqueous solution, mixing the same, and then co-precipitating the mixture; forming a primary precursor powder by cleaning, drying and pulverizing the precipitate; forming a secondary precursor powder by mixing lithium powder [LiOH.H2O] with the primary precursor powder and ball-milling the mixture so as to solidify the lithium; and forming a solid electrolyte powder by heat-treating the secondary precursor powder.

GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,


0.80≤In/(In+Y+Ga)≤0.96  (1),


0.02≤Y/(In+Y+Ga)≤0.10  (2), and


0.02≤Ga/(In+Y+Ga)≤0.10  (3), and

Al element at an atomic ratio as defined in a formula (4) below,


0.005≤Al/(In+Y+Ga+Al)≤0.07  (4),

where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

GARNET-MGO COMPOSITE THIN MEMBRANE AND METHOD OF MAKING

A sintered composite ceramic, including: a lithium-garnet major phase; and a grain growth inhibitor minor phase, such that the grain growth inhibitor minor phase has a metal oxide in a range of 0.1 wt. % to 10 wt. % based on the total weight of the sintered composite ceramic.

Method of making hard-carbon composite material
11831009 · 2023-11-28 · ·

A method is described to make a metal-containing non-amorphous hard-carbon composite material that is synthesized from furan-ring containing compounds. The metals described in the process include lithium and transition metals, including transition metal oxides like lithium titanates. The non-amorphous hard-carbon component of the metal-containing non-amorphous hard-carbon composite material is characterized by a d.sub.002 peak—in the X-ray diffraction patterns—that corresponds to an interlayer spacing of >3.6 Å, along with a prominent D-band peak in the Raman spectra. These metal-containing hard-carbon composites are used for constructing electrodes for Li-ion batteries and Li-ion capacitors.

Material including boron suboxide and method of forming same

A material including a body including B.sub.6O.sub.X can include lattice constant c of at most 12.318. X can be at least 0.85 and at most 1. In a particular embodiment, 0.90≤X≤1. In another particular embodiment, lattice constant a can be at least 5.383 and lattice constant c can be at most 12.318. In another particular embodiment, the body can consist essentially of B.sub.6O.sub.X.

Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,
0.80≤In/(In+Y+Ga)≤0.96  (1),
0.02≤Y/(In+Y+Ga)≤0.10  (2), and
0.02≤Ga/(In+Y+Ga)≤0.10  (3), and Al element at an atomic ratio as defined in a formula (4) below,
0.005≤Al/(In+Y+Ga+Al)≤0.07  (4),
where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

SINTERED BODY, POWDER AND METHOD FOR PRODUCING THE SAME
20220212999 · 2022-07-07 · ·

There is provided a raw material for a zirconia sintered body formed by pressureless sintering and having a high fracture toughness value measured by an SEPB method, a sintered body formed from the raw material, and a method for producing at least one of the raw material and the sintered body.

Also provided is a sintered body that includes zirconia that contains a stabilizer and having a monoclinic fraction of 0.5% or more. Such a sintered body is produced by a method including using a powder that contains a stabilizer and zirconia with a monoclinic fraction of more than 70%, wherein monoclinic zirconia has a crystallite size of more than 23 nm and 80 nm or less.

ZIRCONIA PRE-SINTERED BODY SUITABLE FOR DENTAL USE AND METHOD FOR PRODUCING THE SAME

The present invention provides a zirconia pre-sintered body that enables one visit treatment due to the short firing time and from which a zirconia sintered body having excellent translucency is obtained irrespective of the thickness, and a method for producing the zirconia pre-sintered body. The present invention is a method for producing a zirconia molded body, wherein the zirconia molded body comprises: zirconia; and a stabilizer capable of inhibiting a phase transformation of zirconia, at least a part of the stabilizer is undissolved in zirconia as a solid solution, and the method comprises press molding a mixed powder comprising zirconia and the stabilizer at a pressure of 175 MPa or more to obtain a zirconia molded body.