A material including a body including B.sub.6O.sub.X can include lattice constant c of at most 12.318. X can be at least 0.85 and at most 1. In a particular embodiment, 0.90X1. In another particular embodiment, lattice constant a can be at least 5.383 and lattice constant c can be at most 12.318. In another particular embodiment, the body can consist essentially of B.sub.6O.sub.X.

There are provided an oxide sintered material containing an In.sub.2O.sub.3 crystal phase, a Zn.sub.4In.sub.2O.sub.7 crystal phase and a ZnWO.sub.4 crystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500? C. or more and 1000? C. or less for 30 minutes or longer.

The composite sintered body includes AlN and MgAl.sub.2O.sub.4. The open porosity of the composite sintered body is lower than 0.1%. The relative density of the composite sintered body is not lower than 99.5%. The total percentage of the AlN and the MgAl.sub.2O.sub.4 contained in the composite sintered body is not lower than 95 weight percentage and not higher than 100 weight percentage. The percentage of the MgAl.sub.2O.sub.4 contained in the composite sintered body is not lower than 15 weight percentage and not higher than 70 weight percentage. It is thereby possible to provide a high-density composite sintered body having high plasma corrosion resistance, high volume resistivity, and high thermal conductivity.

Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y.sub.4Al.sub.2O.sub.9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.

A dielectric ceramic composition includes a main component of a perovskite type compound represented by a general formula of ABO.sub.3, in which A is an element in an A-site, B is an element in a B-site, and O is an oxygen element. A includes Ba. A further includes at least one of Ca and Sr. B includes Ti. A sintered-body lattice volume obtained by X-ray diffraction method is 64.33 .sup.3 or below.

A dielectric ceramic composition includes a main component of a perovskite type compound represented by a general formula of ABO.sub.3, in which A is an element in an A-site, B is an element in a B-site, and O is an oxygen element. A includes Ba. B includes Ti and Zr. A sintered-body lattice volume obtained by X-ray diffraction method is 64.50 .sup.3 or above.

Disclosed is a composition having nanoparticles or particles of a refractory metal, a refractory metal hydride, a refractory metal carbide, a refractory metal nitride, or a refractory metal boride, an organic compound consisting of carbon and hydrogen, and a nitrogenous compound consisting of carbon, nitrogen, and hydrogen. The composition, optionally containing the nitrogenous compound, is milled, cured to form a thermoset, compacted into a geometric shape, and heated in a nitrogen atmosphere at a temperature that forms a nanoparticle composition comprising nanoparticles of metal nitride and optionally metal carbide. The nanoparticles have a uniform distribution of the nitride or carbide.

An oxide sintered body includes a bixbyite phase represented by In.sub.2O.sub.3, and a garnet phase represented by Y.sub.3In.sub.2Ga.sub.3O.sub.12.

The method for manufacturing a solid electrolyte using an LLZ material for a lithium-ion battery comprises the steps of: providing a starting material in which lanthanum nitrate [La(NO.sub.3).sub.3.6H.sub.2O] and zirconium nitrate [ZrO(NO.sub.3).sub.2.6H.sub.2O] are mixed at a mole ratio of 3:2; forming an aqueous solution by dissolving the starting material; forming a precipitate by putting ammonia, which is a complex agent, and sodium hydroxide, which adjusts the pH of a reactor, into the aqueous solution, mixing the same, and then co-precipitating the mixture; forming a primary precursor powder by cleaning, drying and pulverizing the precipitate; forming a secondary precursor powder by mixing lithium powder [LiOH.H2O] with the primary precursor powder and ball-milling the mixture so as to solidify the lithium; and forming a solid electrolyte powder by heat-treating the secondary precursor powder.

Disclosed herein are compounds, methods, and tools which comprise tungsten borides and mixed transition metal borides.