A CaSiAlON ceramic with enhanced mechanical properties and a method employing micron-sized and submicron precursors to form the CaSiAlON ceramic. The CaSiAlON ceramic comprises not more than 42 wt % silicon, relative to the total weight of the CaSiAlON ceramic. The method employs submicron particles and also allows for substituting a portion of aluminum nitride with aluminum to form the CaSiAlON ceramic with enhanced mechanical properties.

The present invention relates to a ceramic comprising (or consisting essentially of) a solid solution containing Bi, K, Ti and Fe (and optionally Pb) which exhibits piezoelectric behavior.

A CaSiAlON ceramic with enhanced mechanical properties and a method employing micron-sized and submicron precursors to form the CaSiAlON ceramic. The CaSiAlON ceramic comprises not more than 42 wt % silicon, relative to the total weight of the CaSiAlON ceramic. The method employs submicron particles and also allows for substituting a portion of aluminum nitride with aluminum to form the CaSiAlON ceramic with enhanced mechanical properties.

The present invention relates to parts of transparent corundum ceramics and the production and use of said parts.

A method for producing a composite of cubic boron nitride dispersed in a SiAlON ceramic. This method involves mixing silicon nitride nanoparticles, aluminum nitride nanoparticles, silica nanoparticles, calcium oxide nanoparticles, and cubic boron nitride microparticles to produce a mixture. The cubic boron nitride may be coated with nickel. The mixture is sintered to produce the composite, and this sintering may involve spark plasma sintering and/or sintering at a relatively low temperature. The composite may comprise a mixture of Ca--SiAlON and -SiAlON ceramic reinforced by boron nitride in either or both cubic and hexagonal phases.

A SiAlON composite includes a SiAlON phase including -SiAlON phase, -SiAlON phase and grain boundary phase. The SiAlON composite is prepared from a starting powder mixture including a silicon nitride powder and at least one powder providing aluminum, oxygen, nitrogen, yttrium (Y) and erbium (Er) to the SiAlON composite. The SiAlON composite contains the SiAlON phase of at least 90 vol %, z-value of the -SiAlON phase ranges between 0.27 and 0.36 and thermal diffusivity of the SiAlON composite is equal to or greater than 2.4 (mm.sup.2/sec) and equal to or less than 5.2 (mm.sup.2/sec).

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

A CaSiAlON ceramic with enhanced mechanical properties and a method employing micron-sized and submicron precursors to form the CaSiAlON ceramic. The CaSiAlON ceramic comprises not more than 42 wt % silicon, relative to the total weight of the CaSiAlON ceramic. The method employs submicron particles and also allows for substituting a portion of aluminum nitride with aluminum to form the CaSiAlON ceramic with enhanced mechanical properties.