A substrate support structure includes a substrate support structure body formed from a ceramic composite and having a first surface, a second surface spaced apart from the first surface, and a periphery spanning the first surface and the second surface of the substrate support structure body. The first surface, the second surface, and the periphery of the substrate support structure body are defined by the ceramic composite. The ceramic composite includes two or more of a (a) an aluminum nitride (AlN) constituent, (b) an aluminum oxynitride (Al.sub.2.81O.sub.3.56N.sub.0.44, AlON) constituent, (c) an alpha-alumina (α-Al.sub.2O.sub.3) constituent, (d) a yttrium alumina garnet (Y.sub.3Al.sub.5O.sub.12, YAG) constituent, (e) a yttrium alumina monoclinic (Y.sub.4Al.sub.2O.sub.9, YAM) constituent, (f) a yttrium alumina perovskite (YAlO.sub.3, YAP) constituent, and (g) a yttrium oxide (Y.sub.2O.sub.3) constituent. Semiconductor processing systems and methods of making substrate support structures are also described.

Disclosed are embodiments of high Q modified materials. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(Na.sub.aK.sub.1-a)(Nb.sub.b(T.sub.1-b))O.sub.3-(0.04-x)MZrO.sub.3-x(Bi.sub.cAg.sub.1-c)ZrO.sub.3+d mol % NaNbO.sub.3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.

A dielectric composition includes a main ingredient having a perovskite structure represented by ABO.sub.3, where A is at least one of Ba, Sr, and Ca and B is at least one of Ti, Zr, and Hf, and a first accessory ingredient. The first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of Nb, and 0.25 mole or more and 0.9 mole or less of Mg, a sum of contents of the rare earth element and Nb is 1.5 mole or less.

A dielectric composition includes dielectric particles, grain boundary phases, and segregations. The dielectric particles each include a perovskite compound represented by ABO.sub.3 as a main component. The grain boundary phases are located between the dielectric particles. The segregations exist in a part of the grain boundary phases and include at least Al, Si, and O. A molar ratio (Al/(Al+Si)) of an Al content to a total content of Al and Si in the segregations is 0.45 or more and 0.75 or less.

Provided is a piezoelectric ceramics having a gradual change in piezoelectric constant depending on an ambient temperature. Specifically, provided is a single-piece piezoelectric ceramics including as a main component a perovskite-type metal oxide represented by a compositional formula of ABO.sub.3, wherein an A site element in the compositional formula contains Ba and M.sub.1, the M.sub.1 being formed of at least one kind selected from the group consisting of Ca and Bi, wherein a B site element in the compositional formula contains T1 and M.sub.2, the M.sub.2 being formed of at least one kind selected from the group consisting of Zr, Sn, and Hf, wherein concentrations of the M.sub.1 and the M.sub.2 change in at least one direction of the piezoelectric ceramics, and wherein increase and decrease directions of concentration changes of the M.sub.1 and the M.sub.2 are directions opposite to each other.

A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430≤a≤0.460, 0.433≤b≤0.479, 0.040≤c≤0.070, 0.0125≤d≤0.0650, 0.0015≤e≤0.0092, 0.9×3e≤c−d≤1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

A method of manufacturing ceramic composite material comprises forming a combination of flowable metal oxide precursor (102), which is water-insoluble, and electroceramic powder (104) for covering surfaces of the electroceramic particles (500) with the metal oxide precursor (102), the electroceramic powder (104). A major fraction of the particles (500) has particle diameters within a range 50 μm to 200 μm, and a minor fraction of the particles has diameters smaller than the lower limit of said range, the major fraction having a variety of particle diameters. Then pressure 100 MPa to 500 MPa is applied to said combination, and said combination is exposed, under the pressure, to a heat treatment, which has a maximum temperature within 100° C. to 500° C. for a predefined period for forming the ceramic composite material.

An oxide superconductor according to an embodiment includes an oxide superconducting layer includes a single crystal having a continuous perovskite structure containing at least one rare earth element selected from the group consisting of yttrium, lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium, barium, and copper, containing praseodymium in a part of the site of the rare earth element in the perovskite structure, and having a molar ratio of praseodymium of 0.00000001 or more and 0.2 or less with respect to the sum of the at least one rare earth element and praseodymium; fluorine in an amount of 2.0×10.sup.15 atoms/cc or more and 5.0×10.sup.19 atoms/cc or less; and carbon in an amount of 1.0×10.sup.17 atoms/cc or more and 5.0×10.sup.20 atoms/cc or less.

An antimicrobial material including a substrate and an antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide in and/or on the substrate is described, as well as antimicrobial coating materials and coatings formed therefrom. The antimicrobial material may be constituted in an antimicrobial surface of a surface-presenting substrate, to combat transmission and spread of microbial disease, e.g., disease mediated by microbial pathogens such as bacteria, viruses, and fungi. Antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide as described may be contacted with microorganisms to effect inactivation thereof.