Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the barium magnesium tantalate to form a solid solution having a high Q value.

An ink of the formula: 60-80% by weight BaTiO.sub.3 particles coated with SiO.sub.2; 5-50% by weight high dielectric constant glass; 0.1-5% by weight surfactant; 5-25% by weight solvent; and 5-25% weight organic vehicle. Also a method of manufacturing a capacitor comprising the steps of: heating particles of BaTiO.sub.3 for a special heating cycle, under a mixture of 70-96% by volume N.sub.2 and 4-30% by volume H.sub.2 gas; depositing a film of SiO.sub.2 over the particles; mechanically separating the particles; incorporating them into the above described ink formulation; depositing the ink on a substrate; and heating at 850-900° C. for less than 5 minutes and allowing the ink and substrate to cool to ambient in N.sub.2 atmosphere. Also a dielectric made by: heating particles of BaTiO.sub.3 for a special heating cycle, under a mixture of 70-96% by volume N.sub.2 and 4-30% by volume H.sub.2 gas; depositing a film of SiO.sub.2 over the particles; mechanically separating the particles; forming them into a layer; and heating at 850-900° C. for less than 5 minutes and allowing the layer to cool to ambient in N.sub.2 atmosphere.

The ceramic material element includes a main phase of orthorhombic perovskite-structure and a secondary phase due to a heat treatment within 700° C. to 850° C. for a first period followed by a second period within 1140° C. to 1170° C., from a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel, and the molar ratio R1 is in a range 0.29-0.32, the molar ratio R2 is in a range 0.20-0.23, the molecular ratio R3 is in a range 0.01-0.02, the molar ratio R4 is in a range 0.54-0.55, and the molar ratio R5 is in a range 0.006-0.011, while a relative ratio of R1/R2 is in the range 1.24-1.52, and a relative ratio of R4/R2 is in the range 2.32-2.62. The ceramic material element converts optical radiation energy and mechanical vibration energy into electric energy.

A piezoelectric composition including copper and a complex oxide having a perovskite structure represented by a general formula ABO.sub.3, in which an A site element in the ABO.sub.3 is potassium or potassium and sodium, a B site element in the ABO.sub.3 is niobium or niobium and tantalum, the copper is included in n mol % in terms of a copper element with respect to 1 mol of the complex oxide, and n satisfies 0.100≤n≤1.000.

Colloidal perovskite nanoplatelets can provide a material platform, with tunability extending from the deep UV, across the visible, into the near-IR. The high degree of spectral tunability can be achieved through variation of the cation, metal, and halide composition as well as nanoplatelet thickness.

A manganese oxide contains M1, optionally M2, Mn and O. M1 is selected from the group consisting of In, Sc, Y, Dy, Ho, Er, Tm, Yb and Lu. M2 is different from M1, and M2 is selected from the group consisting of Bi, In, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. These ceramic materials are hexagonal in structure, and provide superior materials for gas separation and oxygen storage.

Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing:

a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less:

A.sub.1+δ[(Zr.sub.xTi.sub.1−a).sub.1−aNb.sub.a]O.sub.y  Formula P

wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.

The present invention discloses a dielectric ceramic formula enabling one to obtain a multilayer ceramic capacitor by alternatively stacking the ceramic dielectric layers and base metal internal electrodes. The dielectric ceramic composition comprises a primary ingredient:

[(Na.sub.1-xK.sub.x).sub.sA.sub.1-s].sub.m[(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]O.sub.3

wherein:
A is at least one selected from the alkaline-earth element group of Mg, Ca, Sr, and Ba;
B1 is at least one selected from the group of Ti, Zr, Hf and Sn;
B2 is at least one selected from transition metal elements;
and wherein:
x, y, s, u, v, and w are molar fractions of respective elements, and m is the molar ratio of [(Na.sub.1-xK.sub.x).sub.sA.sub.1-s] and [(Nb.sub.1-yTa.sub.y).sub.uB1.sub.vB2.sub.w)]. They are in the following respective range:
0.93≤m≤1.07;
0.7≤s≤1.0;
0.00≤x≤0.05; 0.00≤y≤0.65;
0.7≤u≤1.0; 0.0≤v≤0.3; 0.001≤w≤0.100;
a first sub-component composes of at least one selected from the rare-earth compound,
wherein the rare-earth element is no more than 10 mol % parts with respect to the main component; and
a second sub-component composes a compound with low melting temperature to assist the ceramic sintering process, said frit, which is Li free and could be at least one selected from fluorides, silicates, borides, and oxides. The content of frit is within the range of 0.01 mol % to 15.00 mol % parts with respect to the main component.

A ceramic body being configured of mainly BaTiO.sub.3-based crystalline particles in which a part of Ba is substituted with at least one rare earth element, wherein the ceramic body contains Ba.sub.6Ti.sub.17O.sub.40 crystalline particles of from 1.0 to 10.0% by mass.

A module having a power semiconductor device and a ceramic capacitor which is configured for cooling the power semiconductor device.