A method of making a carbon-carbon composite may comprise forming a Silicon-Aluminum-Oxygen-Nitrogen (SiAlON) precursor suspension and infiltrating a fibrous preform with the SiAlON precursor suspension. A SiAlON forming heating treatment may be performed on the fibrous preform to form SiAlON particles. The fibrous preform may be densified using chemical vapor infiltration to form a densified fibrous preform.

A process for producing a process for producing a LnM.sub.2Cu.sub.3O.sub.x high-temperature superconductive powder, the process comprising: i) providing an aqueous solution of Ln, M and Cu and at least one mineral acid; ii) adding at least one sequestrating agent and, optionally, at least one dispersant to the solution to form a precipitate; iii) recovering the precipitate from the solution; and iv) heating the precipitate in a flow of oxygen to form the LnM.sub.2Cu.sub.3O.sub.x powder, wherein Ln is a rare earth element, preferably Y, Ce, Dy, Er, Gd, La, Nd, Pr, Sm, Sc, Yb, or a mixture of two or more thereof, and wherein M is selected from Ca, Sr, and Ba.

A polycrystalline cubic boron nitride comprising 96% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of 8×10.sup.15/m.sup.2 or less, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of less than 100 nm.

A dielectric composition includes dielectric particles. At least one of the dielectric particles include a main phase and a secondary phase. The main phase has a main component of barium titanate. The secondary phase exists inside the main phase and has a higher barium content than the main phase.

The present invention relates to sintered platelet-like randomly shaped abrasive particles based on alpha alumina having a hardness H.sub.V of at least 20 GPa and a crystal structure with an average crystal size between 100 nm and 300 nm, whereby the abrasive particles comprise a body having a first surface and a second surface opposite to the first surface, both surfaces are separated from each other by a randomly shaped sidewall having a thickness (T) between 20 μm and 500 μm.

A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

An aluminophosphate-metal oxide bonded body including a metal oxide having a bonding surface on a part of the surface thereof, and aluminophosphate that is disposed on the bonding surface of the metal oxide, wherein an alkali metal, an alkaline earth metal or both of these is/are disposed on the bonding surface of the metal oxide, and the content rate of the alkali metal, alkaline earth metal or both is from 0.3 to 30.0% by mass with respect to all of the substances that are disposed on the bonding surface of the metal oxide. An aluminophosphate-metal oxide bonded body that provides a favorable bonded state even for complicated shapes is provided.

A polycrystalline cubic boron nitride comprising 96% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×10.sup.15/m.sup.2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of less than 100 nm.

Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises Y.sub.3Al.sub.5O.sub.12 as a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

A slurry or slip composed of a dispersion medium and a dispersoid including sinterable raw material powder containing a complex oxide powder represented by the following formula (1):
(Tb.sub.1-x-yR.sub.xSc.sub.y).sub.3(Al.sub.1-zSc.sub.z).sub.5O.sub.12  (1)
wherein R is yttrium and/or lutetium, 0.05≤x<0.45, 0<y<0.1, 0.5<1-x-y<0.95, and 0.004<z<0.2 is prepared; the slurry or slip is subsequently enclosed in a mold container to be subjected to solid-liquid separation by centrifugal casting to mold a cast compact; the cast compact is dried thereafter; a dried compact is degreased; a degreased compact is sintered thereafter; and a sintered body is further subjected to a hot isostatic pressing treatment to obtain the transparent ceramic material composed of the sintered body of garnet-type rare earth complex oxide represented by the formula (1).