C04B2235/782

CERAMIC COMPONENT AND METHOD OF FORMING SAME

A body including a first phase having silicon carbide, a second phase comprising a metal oxide, the second phase being a discrete intergranular phase located at the grain boundaries of the first phase, and the body has an average strength of at least 700 MPa.

SPINEL REFRACTORY GRANULATES WHICH ARE SUITABLE FOR ELASTICIZING HEAVY-CLAY REFRACTORY PRODUCTS, METHOD FOR THEIR PRODUCTION AND USE THEREOF

The disclosure relates to a granular, refractory mineral elasticizing granulate for refractory products, in particular for basic refractory products. The minerals consist of mono-phased sintered spinel mixed crystal of the ternary system MgOFe.sub.2O.sub.3Al.sub.2O.sub.3 of the composition range MgO: 12 to 19.5, in particular 15 to 17 wt.-%, Remainder: Fe.sub.2O.sub.3 and Al.sub.2O.sub.3 in a quantity ratio range of Fe.sub.2O.sub.3 to Al.sub.2O.sub.3 between 80 to 20 and 40 to 60 wt.-%.

Starting from an MgO content between 12 and 19.5 wt.-%, the respective mixed crystals have an Fe.sub.2O.sub.3 and Al.sub.2O.sub.3 content in a solid solution out of the limited ranges respectively indicated thereof, such that a total composition of 100% is obtained. In addition, the invention relates to a method for production of the elasticizing granulate and to the use thereof.

DIAMOND POLYCRYSTALLINE BODY, AND TOOL COMPRISING DIAMOND POLYCRYSTALLINE BODY

A polycrystalline diamond comprising diamond particles, wherein: the content of the diamond particles is more than 99% by volume based on the total volume of the polycrystalline diamond; the median diameter d50 of the diamond particles is 10 nm or more and 200 nm or less; and the dislocation density of the diamond particles is 2.0?10.sup.15 m.sup.?2 or more and 4.0?10.sup.16 m.sup.?2 or less.

POLYCRYSTALLINE SiC SUBSTRATE AND METHOD FOR MANUFACTURING SAME
20190153616 · 2019-05-23 ·

A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of warpage of the polycrystalline SiC substrate is 142 m or more.

SPINEL REFRACTORY GRANULATES WHICH ARE SUITABLE FOR ELASTICIZING HEAVY-CLAY REFRACTORY PRODUCTS, METHOD FOR THEIR PRODUCTION AND USE THEREOF

The invention relates to a granular, refractory mineral elasticizing granulate for refractory products, in particular for basic refractory products. The minerals consist of mono-phased fused spinel mixed crystal or multi-phased fusion products of the ternary system MgOFe.sub.2O.sub.3Al.sub.2O.sub.3 of the composition range MgO: 12 to 19.5, in particular 15 to 17 wt.- %, Remainder: Fe.sub.2O.sub.3 and Al.sub.2O.sub.3 in a quantity ratio range of Fe.sub.2O.sub.3 to Al.sub.2O.sub.3 between 80 to 20 and 40 to 60 wt.- %.

Starting from an MgO content between 12 and 19.5 wt.- %, the respective mixed crystals have an Fe.sub.2O.sub.3 and Al.sub.2O.sub.3 content in a solid solution out of the limited ranges respectively indicated thereof, such that a total composition of 100% is obtained. In addition, the invention relates to a method for production of the elasticizing granulate and to the use thereof.

Piezoelectric ceramic, method for making the same, piezoelectric element, liquid discharge head, ultrasonic motor, and dust cleaner

A barium titanate piezoelectric ceramic having good piezoelectric properties and mechanical strength and a piezoelectric element that includes the ceramic are provided. A method for making a piezoelectric ceramic includes forming a compact composed of an oxide powder containing barium titanate particles, sintering the compact, and decreasing the temperature of the compact after the sintering. The sintering includes (A) increasing the temperature of the compact to a first temperature within a temperature range of a shrinking process of the compact; (B) increasing the temperature of the compact to a second temperature within a temperature range of a liquid phase sintering process of the compact after (A); (C) decreasing the temperature of the compact to a third temperature within the temperature range of the shrinking process of the compact after (B); and (D) retaining the third temperature after (C).

SINTERED PRODUCT WITH HIGH IRON OXIDE CONTENT
20190127622 · 2019-05-02 ·

A sintered material exhibiting the following chemical composition, as percentages by weight: iron oxide(s), expressed in the Fe.sub.2O.sub.3 form, 85%, CaO: 0.1%-6%, SiO.sub.2: 0.1%-6%, 0.05% TiO.sub.2, 0Al.sub.2O.sub.3, TiO.sub.2+Al.sub.2O.sub.33%, and constituents other than iron oxides, CaO, SiO.sub.2, TiO.sub.2 and Al.sub.2O.sub.3: 5%. The CaO/SiO.sub.2 ratio by weight is between 0.2 and 7. The TiO.sub.2/CaO ratio by weight is between 0.2 and 1.5.

COPPER-CERAMIC COMPOSITE
20190084893 · 2019-03-21 ·

The invention relates to a copper-ceramic composite comprising: a ceramic substrate; and a copper or copper alloy coating on the ceramic substrate, the copper or copper alloy having grain sizes of 10 m to 300 m.

Systems and methods for additive manufacturing of metal nitride ceramics
12042861 · 2024-07-23 · ·

Described herein are embodiments directed to additive manufacturing (AM), including three-dimensional (3D) printing, of metal nitride ceramics. In some embodiments herein, AM may comprise powder bed fusion (PBF) techniques. Also described herein are metal nitride ceramic components formed by AM techniques and methods for forming metal nitrides capable of being used in AM processes.

Multilayer electronic component and dielectric composition
12046421 · 2024-07-23 · ·

A multilayer electronic component includes a body including a plurality of dielectric layers, wherein, wherein a central portion of the capacitance formation portion is Aa, a boundary portion of the capacitance formation portion, adjacent to the cover portions, is Ab, a dielectric grain size corresponding to the top 50% of dielectric grains, in order of enlargement, from the smallest grain size, among a plurality of dielectric grains included in Aa, is D50a, and a dielectric grain size corresponding to the top 50% of dielectric grains, in order of enlargement, from the smallest grain size, among a plurality of dielectric grains included in Ab, is D50b, D50a satisfies 190 nm or less and D50b satisfies 120 nm or greater.