Patent classifications
C04B2235/785
LOW LOSS POWER FERRITES AND METHOD OF MANUFACTURE
A multiphase ferrite composition includes a primary phase consisting of a MnZn ferrite matrix; and 0.01 to 10 weight percent microscaled inclusion particles comprising an orthoferrite RFeO3 wherein R is a rare earth ion, yttrium iron garnet (YIG), or a combination thereof, wherein the microscaled inclusion particles have an average particle size (D50) of 0.1 micron to 5 microns, and wherein the D50 of the microscaled inclusion particles is smaller than the average particle size (D50) of the MnZn ferrite particles; and optionally 0.01 to 5 weight percent additive; wherein weight percent is based on the total weight of the multiphase ferrite composition. A method of manufacturing the multiphase ferrite composition is also disclosed.
Sintered material and cutting tool including same
A sintered material includes a cubic boron nitride, a zirconium-containing oxide, a zirconium-containing nitride, and an aluminum-containing oxide, wherein the zirconium-containing nitride includes both or one of ZrN and ZrON, and the aluminum-containing oxide includes a type Al.sub.2O.sub.3.
CONTROLLED POROSITY YTTRIUM OXIDE FOR ETCH APPLICATIONS
A sintered yttrium oxide body having a total impurity level of 40 ppm or less, a density of not less than 4.93 g/cm3, wherein the sintered yttrium oxide body has at least one surface comprising at least one pore, wherein no pore is larger than 5 μm in diameter. A process for making the sintered yttrium oxide body is also disclosed.
CUBIC BORON NITRIDE SINTERED MATERIAL
A cubic boron nitride sintered material includes: 20 to 80 volume % of cBN grains; and 20 to 80 volume % of a binder phase, wherein the binder phase includes first binder grains and second binder grains, in each of the first binder grains, a ratio of the number of atoms of the first metal element to a total of the number of atoms of the titanium and the first metal element is more than or equal to 0.01% and less than 10%, in each of the second binder grains, the ratio is more than or equal to 10% and less than or equal to 80%, and an average grain size of the second binder grains is more than or equal to 0.2 μm and less than or equal to 1 μm.
MULTILAYERED ELECTRONIC COMPONENT AND DIELECTRIC COMPOSITION
A multilayer electronic component according to some embodiments of the present disclosure includes: a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer; and an external electrode disposed on the body, wherein a ratio of the number of dielectric grains having a size of 100 to 250 nm included in the dielectric layer is 55% or more with respect to a total number of the dielectric grains included in the dielectric layer.
DIELECTRIC MATERIAL AND MULTILAYER CERAMIC ELECTRONIC COMPONENT INCLUDING THE SAME
A dielectric material includes a main component represented by (Ba.sub.1-xCa.sub.x)(Ti.sub.1-y(Zr, Sn, Hf).sub.y)O.sub.3 (0≤x≤1 and 0≤y≤0.5); a first subcomponent including at least one of elements among Y, Dy, Ho, Er, Gd, Ce, Nd, Nb, Sm, Tb, Eu, Tm, La, Lu, and Yb; a second subcomponent including Si and/or Al; and a third subcomponent including Ba and/or Ca.
Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxide
Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.
Zinc oxide varistor and method for manufacturing same
Focus is on zinc oxide itself, which is a base material for a zinc oxide varistor (laminated varistor), wherein specified quantities of additives are added to a zinc oxide powder having a crystallite size of 20 to 50 nm, grain diameter of 15 to 60 nm found using the specific surface area BET method, untamped density of 0.38 to 0.50 g/cm.sup.3, and tap density of 0.50 to 1.00 g/cm.sup.3. This allows securing of uniformity, high compactness, and high electrical conductivity of a zinc oxide sintered body, and provision of a zinc oxide varistor having high surge resistance.
SINTERED BODY, METHOD FOR PRODUCING SAME, AND DIELECTRIC COMPOSITION
A sintered body containing polycrystalline grains of a metal oxynitride containing at least two metal elements, wherein Ba and at least one metal element of a crystal phase of the sintered body are contained in a triple point that is not a void between the polycrystalline grains. A method for producing the sintered body includes sintering a mixture of at least a metal oxynitride as a main component and a sintering aid containing cyanamide in an atmosphere containing nitrogen or a rare gas or in a reduced-pressure atmosphere of 10 Pa or less while applying a mechanical pressure with a retention time at a maximum heating temperature during the sintering set to 1 minute to 10 minutes.
CERAMIC ELECTRONIC COMPONENT
A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of dielectric crystal grains, and at least one of the plurality of dielectric crystal grains has a core-double shell structure, the double shell includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell, the first shell includes a first element, one or more of Sn, Sb, Ge, Si, Ga, In, or Zr, and the second shell includes a second element, one or more of Ca or Sr.