A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

A composite material and a method of using the composite material. The composite material consists of at least 65 volume percent cubic boron nitride (cBN) grains dispersed in a binder matrix, the binder matrix comprising a plurality of microstructures bonded to the cBN grains and a plurality of intermediate regions between the cBN grains; the microstructures comprising nitride or boron compound of a metal; and the intermediate regions including a silicide phase containing the metal chemically bonded with silicon; in which the content of the silicide phase is 2 to 6 weight percent of the composite material, and in which the cBN grains have a mean size of 0.2 to 20 μm.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

A dielectric substance includes a core-shell grain having a twin crystal structure. An interface of the twin crystal structure of the core-shell grain extends from a shell on one side, passes through a core, and extends to the shell on the other side.

A multi-layer ceramic capacitor has a structure where the dispersion, nd, of average grain size of the dielectric grains constituting the dielectric layer (a value (D90/D10) obtained by dividing D90 which is a grain size including 90% cumulative abundance of grains by D10 which is a grain size including 10% cumulative abundance of grains) is smaller than 4.

Methods of flash sintering have been developed in which particle are initially coated with thin layers by atomic layer deposition (ALD). Examples are provided in which 8 mol % yttria-stabilized zirconia (8YSZ) particles are coated with small quantities of Al.sub.2O.sub.3 by particle atomic layer deposition (ALD). Sintered materials that result from the process have been characterized. Sintered materials having unique characteristics are also described.

A polycrystalline cubic boron nitride comprising 96% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×10.sup.15/m.sup.2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of less than 100 nm.

A composite sintered body, wherein the composite sintered body consists of ceramic composite sintered body, the ceramic composite sintered body comprises aluminum oxide as a main phase, and silicon carbide as a sub-phase, in which the composite sintered body has mullite in crystal grains of the aluminum oxide.

A heat dissipation member dissipates heat generated at a heat source. The heat dissipation member may include a substrate having a porosity ratio of 5 volume % or less; and an inorganic porous layer disposed on a surface of the substrate, wherein the inorganic porous layer may have a porosity ratio ranging from 25 volume % or more to 85 volume % or less and have lower thermal conductivity than the substrate. In this heat dissipation member, 15 mass % or more of constituents of the inorganic porous layer may be alumina.

A paramagnetic garnet-type transparent ceramic that exhibits a high laser damage threshold, said ceramic being a sintered body of a Tb-containing rare earth-aluminum garnet represented by formula (1), and being characterized in that the average sintered grain size is 10-40 μm, and the insertion loss at a wavelength of 1,064 nm in the optically effective region along the length direction of a 20 mm-long sample is 0.05 dB or less.

(Tb.sub.1-x-yY.sub.xSc.sub.y).sub.3(Al.sub.1-zSc.sub.z).sub.5O.sub.12  Formula (1)

(In the formula, 0≤x<0.45, 0≤y<0.08, 0≤z<0.2, and 0.001<y+z<0.20.)