A composition comprises a zirconia powder, in which 55% or more thereof is monoclinic, and a stabilizer capable of suppressing phase transition of zirconia. An average particle diameter of zirconia particles and particles of the stabilizer is 0.06 μm to 0.17 μm. At least a portion of the stabilizer does not form a solid solution with zirconia.

A composition comprises a zirconia powder, in which 55% or more thereof is monoclinic, and a stabilizer capable of suppressing phase transition of zirconia. An average particle diameter of zirconia particles and particles of the stabilizer is 0.06 μm to 0.17 μm. At least a portion of the stabilizer does not form a solid solution with zirconia.

Various shaped abrasive particles are disclosed. Each shaped abrasive particle includes a body having at least one major surface and a side surface extending from the major surface. The side surface can includes a toothed portion. The toothed portion can comprise a plurality of teeth. Each one of the teeth can have the same height.

A zirconia powder is provided comprising a yttria source and zirconia, wherein a content of the yttria source is 4.5 mol % or more and 6.5 mol % or less and the remainder is zirconia, a ratio of a total of tetragonal and cubic crystals to an entire crystal phase of zirconia is 90% or less, a BET specific surface area is 7.5 m.sup.2/g or more and 15 m.sup.2/g or less, and an average crystallite size is 325 Å or greater. The powders are useful in producing sintered bodies having the mechanical strength and the translucency desired for use in dental prosthetic materials, and precursors thereof.

A cubic boron nitride sintered material includes: more than or equal to 80 volume % and less than or equal to 96 volume % of cubic boron nitride grains; and a binder, wherein the binder includes tungsten carbide, cobalt, and an aluminum compound, and Ha/Hb≥0.40 is satisfied, where Hb represents a hardness of the cubic boron nitride sintered material and Ha represents a hardness of the cubic boron nitride sintered material after performing acid treatment onto the cubic boron nitride sintered material to substantially remove the binder in the cubic boron nitride sintered material.

This electrostatic chuck device (1) includes a base (11) having one main surface serving as a mounting surface (19) on which a plate-shaped sample is mounted, and an electrode for electrostatic attraction (13) provided on the side opposite to the mounting surface (19) in the base (11), in which the base (11) consists of a ceramic material as a forming material, and the ceramic material contains aluminum oxide and silicon carbide as main components thereof, and has a layered graphene present at a grain boundary of the aluminum oxide.

A zirconia sintered body that includes a transparent zirconia portion and an opaque zirconia portion has a biaxial bending strength of 300 MPa or more. In addition, the opaque zirconia portion is configured by an opaque zirconia sintered body that is any one of a dark-colored zirconia sintered body, a medium-light-colored zirconia sintered body, and a light-colored zirconia sintered body.

The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder. The silicon nitride substrate in an unpolished state after sintering is a silicon nitride sintered substrate where a cumulative volume of pores having a diameter in a range of 1 to 10 μm is not more than 7.0'10.sup.−5 mL/cm.sup.2 in a measurement by a mercury porosimetry. Preferably, Ra of the surface is not more than 0.6 μm and arithmetic mean peak curvature (Spc) of a peak is not more than 4.5 [l/mm].

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.

A cubic boron nitride sintered material includes: more than or equal to 80 volume % and less than or equal to 96 volume % of cubic boron nitride grains; and a binder, wherein the binder includes tungsten carbide, cobalt, and an aluminum compound, and Ha/Hb≥0.40 is satisfied, where Hb represents a hardness of the cubic boron nitride sintered material and Ha represents a hardness of the cubic boron nitride sintered material after performing acid treatment onto the cubic boron nitride sintered material to substantially remove the binder in the cubic boron nitride sintered material.