A multiphase ferrite composition includes a primary phase consisting of a MnZn ferrite matrix; and 0.01 to 10 weight percent microscaled inclusion particles comprising an orthoferrite RFeO3 wherein R is a rare earth ion, yttrium iron garnet (YIG), or a combination thereof, wherein the microscaled inclusion particles have an average particle size (D50) of 0.1 micron to 5 microns, and wherein the D50 of the microscaled inclusion particles is smaller than the average particle size (D50) of the MnZn ferrite particles; and optionally 0.01 to 5 weight percent additive; wherein weight percent is based on the total weight of the multiphase ferrite composition. A method of manufacturing the multiphase ferrite composition is also disclosed.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

A sintered material includes a cubic boron nitride, a zirconium-containing oxide, a zirconium-containing nitride, and an aluminum-containing oxide, wherein the zirconium-containing nitride includes both or one of ZrN and ZrON, and the aluminum-containing oxide includes a type Al.sub.2O.sub.3.

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

A ferrite sintered body of the invention includes; a main component including 48.65 to 49.45 mol % of iron oxide in terms of Fe.sub.2O.sub.3, 2 to 16 mol % of copper oxide in terms of CuO, 28.00 to 33.00 mol % of zinc oxide in terms of ZnO, and a balance including nickel oxide, and a subcomponent including boron oxide in an amount of 5 to 100 ppm in terms of B.sub.2O.sub.3 with respect to 100 parts by weight of the main component, in which the ferrite sintered body includes crystal grains having an average crystal grain size of 2 to 30 μm.

A sintered body containing polycrystalline grains of a metal oxynitride containing at least two metal elements, wherein Ba and at least one metal element of a crystal phase of the sintered body are contained in a triple point that is not a void between the polycrystalline grains. A method for producing the sintered body includes sintering a mixture of at least a metal oxynitride as a main component and a sintering aid containing cyanamide in an atmosphere containing nitrogen or a rare gas or in a reduced-pressure atmosphere of 10 Pa or less while applying a mechanical pressure with a retention time at a maximum heating temperature during the sintering set to 1 minute to 10 minutes.

A radio-frequency (RF) power variable capacitor capable of operating at, at least, 50 watts in the MHz range. The capacitor has a composite HDK-NDK ceramic dielectric. The HDK (high dielectric constant) component comprises an active matrix of barium strontium titanate, for example. Acoustic resonances are reduced or eliminated by the addition of a metal or metalloid oxide such as magnesium borate (NDK—low dielectric constant), which acts as an acoustic resonance reduction agent (ARRA) in the RF power domain. The acoustic resonances which previously occurred under bias voltage 500 V or 1100 V in prior art RF power variable capacitors are eliminated by the addition of the ARRA.

Hafnium carbide powder for plasma electrodes is represented by a chemical formula HfC.sub.x (where x=0.5 to 1.0). The content of carbon particles contained as impurities in the hafnium carbide powder is less than or equal to 0.03% by mass. The hafnium carbide powder preferably has an average particle size of 0.5 to 2 μm. To produce the hafnium carbide powder, a pellet made from mixed powder of hafnium oxide and carbon is first placed in a second crucible made of silicon carbide. Then, the hafnium carbide powder is formed by heating the second crucible at 1800 to 2000° C. with the second crucible arranged in a first crucible made of carbon.

A ceramic complex including a first crystal phase containing a first rare earth aluminate fluorescent material containing an activating element and a first rare earth element that is different from the activating element, and a second crystal phase containing aluminum oxide, having a content of the first crystal phase in a range of 5% by volume or more and 40% by volume or less and a content of the second crystal phase in a range of 57% by volume or more and 95% by volume or less based on a total amount of the ceramic complex, having an average value of a second crystal diameter of the second crystal phase measured under the particular measurement condition of 12 μm or less, and having a QD value of 0.5 or less expressed by QD=(D.sub.75−D.sub.25)/(D.sub.75+D.sub.25), wherein D.sub.25 and D.sub.75 are defined in the disclosure.

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.