C04B2235/786

ZIRCONIA SINTERED BODY AND PRODUCTION METHOD THEREOF

A zirconia powder is provided comprising a yttria source and zirconia, wherein a content of the yttria source is 4.5 mol % or more and 6.5 mol % or less and the remainder is zirconia, a ratio of a total of tetragonal and cubic crystals to an entire crystal phase of zirconia is 90% or less, a BET specific surface area is 7.5 m.sup.2/g or more and 15 m.sup.2/g or less, and an average crystallite size is 325 Å or greater. The powders are useful in producing sintered bodies having the mechanical strength and the translucency desired for use in dental prosthetic materials, and precursors thereof.

Cubic boron nitride sintered material

A cubic boron nitride sintered material includes: more than or equal to 80 volume % and less than or equal to 96 volume % of cubic boron nitride grains; and a binder, wherein the binder includes tungsten carbide, cobalt, and an aluminum compound, and Ha/Hb≥0.40 is satisfied, where Hb represents a hardness of the cubic boron nitride sintered material and Ha represents a hardness of the cubic boron nitride sintered material after performing acid treatment onto the cubic boron nitride sintered material to substantially remove the binder in the cubic boron nitride sintered material.

Electro-conductive B.SUB.4.C-TiB.SUB.2 .composite ceramic and preparation method thereof

An electro-conductive B.sub.4C—TiB.sub.2 has a microstructure in which large B.sub.4C grains are coated by small TiB.sub.2 grains. The composite ceramic includes 10˜30% by volume of TiB.sub.2. A method for preparing the electro-conductive B.sub.4C—TiB.sub.2 composite ceramic includes: (1) weighing B.sub.4C, TiC, and amorphous B powder; (2) mixing evenly and drying thoroughly the powders; and (3) loading the mixed powder into a graphite mold; and placing the graphite mold in a spark plasma sintering furnace for sintering under vacuum, where the sintering is performed at 2000° C. and 50 MPa for 5˜20 min.

High strength ceramics with novel fracture mode

The present invention provides a method for making a high strength, small grain size ceramic having a transgranular fracture mode by rapid densification of a green body and subsequent cooling of the densified ceramic. The ceramic may include dislocations, defects, dopants, and/or secondary phases that are formed as a result of the process and resulting in stress fields capable of redirecting or arresting cracks within the material. This ceramic can maintain transparency from ultraviolet to mid-wave infrared.

LITHIUM-GARNET SOLID ELECTROLYTE COMPOSITE, TAPE ARTICLES, AND METHODS THEREOF

A composite ceramic including: a lithium garnet major phase; and a grain growth inhibitor minor phase, as defined herein. Also disclosed is a method of making composite ceramic, pellets and tapes thereof, a solid electrolyte, and an electrochemical device including the solid electrolyte, as defined herein.

Electrostatic chuck device and method for manufacturing same

This electrostatic chuck device (1) includes a base (11) having one main surface serving as a mounting surface (19) on which a plate-shaped sample is mounted, and an electrode for electrostatic attraction (13) provided on the side opposite to the mounting surface (19) in the base (11), in which the base (11) consists of a ceramic material as a forming material, and the ceramic material contains aluminum oxide and silicon carbide as main components thereof, and has a layered graphene present at a grain boundary of the aluminum oxide.

Zirconia sintered body and manufacturing method of the same

A zirconia sintered body that includes a transparent zirconia portion and an opaque zirconia portion has a biaxial bending strength of 300 MPa or more. In addition, the opaque zirconia portion is configured by an opaque zirconia sintered body that is any one of a dark-colored zirconia sintered body, a medium-light-colored zirconia sintered body, and a light-colored zirconia sintered body.

SILICON NITRIDE SINTERED SUBSTRATE

The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder. The silicon nitride substrate in an unpolished state after sintering is a silicon nitride sintered substrate where a cumulative volume of pores having a diameter in a range of 1 to 10 μm is not more than 7.0'10.sup.−5 mL/cm.sup.2 in a measurement by a mercury porosimetry. Preferably, Ra of the surface is not more than 0.6 μm and arithmetic mean peak curvature (Spc) of a peak is not more than 4.5 [l/mm].

M-TYPE HEXAFERRITE COMPRISING A LOW DIELECTRIC LOSS CERAMIC
20230352221 · 2023-11-02 ·

In an aspect, an M-type ferrite, comprises oxides of Me, Me′, Me″, Co, Ti, and Fe; wherein Me is at least one of Ba, Sr, or Pb; Me′ is at least one of Ti, Zr, Ru, or Ir; and Me″ is at least one of Mg or Ca. In another aspect, a method of making an M-type ferrite comprises milling ferrite precursor compounds comprising oxides of at least Co, Fe, Ti, Me, Me′, and Me″, to form an oxide mixture; wherein Me comprises at least one of Ba, Sr, or Pb; Me′ is at least one of Ti, Zr, Ru, or Ir; and Me″ is at least one of Mg or Ca; and calcining the oxide mixture in an oxygen or air atmosphere to form the M-type ferrite.

CUBIC BORON NITRIDE SINTERED MATERIAL

A cubic boron nitride sintered material includes: more than or equal to 80 volume % and less than or equal to 96 volume % of cubic boron nitride grains; and a binder, wherein the binder includes tungsten carbide, cobalt, and an aluminum compound, and Ha/Hb≥0.40 is satisfied, where Hb represents a hardness of the cubic boron nitride sintered material and Ha represents a hardness of the cubic boron nitride sintered material after performing acid treatment onto the cubic boron nitride sintered material to substantially remove the binder in the cubic boron nitride sintered material.