Embodiments relate to a method for fabricating a sintered sodium-ion material. The method involves mixing a parent phase sodium-ion compound with a secondary transient phase to form a powder mixture. The method involves applying pressure and heat above a melting point or boiling point of the secondary transient phase to drive dissolution at particle contacts and subsequent precipitation at newly formed grain boundaries. The method involves generating a sintered sodium-ion material with >90% relative density.

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

A solid electrolyte includes partially stabilized zirconia in which a stabilizer forms a solid solution in zirconia. The partially stabilized zirconia includes at least monoclinic phase particles and cubic phase particles as crystal particles that configure the partially stabilized zirconia, and an abundance ratio of the monoclinic phase particle is 5 to 25% by volume. The partially stabilized zirconia includes stabilizer low-concentration phase particles of which concentration of the stabilizer at a particle center is equal to or less than 1 mol %, as the crystal particles. The stabilizer low-concentration phase particles have a particle-size distribution of number frequency thereof having a peak at which an average particle size is 0.6 to 1.0 μm, and a particle size at 10% of a cumulative number is 0.5 μm or greater, and of the overall low-concentration phase particles, 50% by volume or greater belong to the peak.

A grain-oriented M-type hexagonal ferrite has the formula MeFe.sub.12O.sub.19, and a dopant effective to provide planar magnetic anisotropy and magnetization in a c-plane, or a cone anisotropy, in the hexagonal crystallographic structure wherein Me is Sr.sup.+, Ba.sup.2+ or Pb.sup.2+, and wherein greater than 30%, preferably greater than 80%, of c-axes of the ferrite grains are aligned perpendicular to the c-plane.

The sintered body has an average particle size in the range of 0.1 μm or more and 5 μm or less, includes gamet-type oxide base material particles having at least Li, La, and Zr, has 8% by volume or more of voids, and has an ionic conductivity of 1.0×10.sup.−5 S/cm or more at temperature of 25° C.

A copper-ceramic composite: includes a ceramic substrate containing alumina and a copper or copper alloy coating on the ceramic substrate. The alumina has a mean grain shape factor R.sub.a(Al.sub.2O.sub.3), defined as the arithmetic mean of the shape factors R of the alumina grains, of at least 0.4.

The invention relates to a copper-ceramic composite, comprising a ceramic substrate, which contains aluminum oxide, a coating on the ceramic substrate made of copper or a copper alloy, wherein the aluminum oxide has an average grain form factor R.sub.a(Al.sub.2O.sub.3), determined as an arithmetic average value from the form factors of the grains of the aluminum oxide, the copper or the copper alloy has an average grain form factor R.sub.a(Cu), determined as an arithmetic average of the form factors of the grains of the copper or copper alloy, and the average grain form factors of the aluminum oxide and copper or copper alloy meet the following condition: 0.5≤R.sub.a(Al.sub.2O.sub.3)/R.sub.a(Cu)≤2.0.

A ceramic composite can include a first ceramic phase and a second ceramic phase. The first ceramic phase can include a silicon carbide. The second phase can include a boron carbide. In an embodiment, the silicon carbide in the first ceramic phase can have a grain size in a range of 0.8 to 200 microns. The first phase, the second phase, or both can further include a carbon. In another embodiment, at least one of the first ceramic phase and the second ceramic phase can have a median minimum width of at least 5 microns.

The invention relates to a strontium aluminate mixed oxide precursor and a method for producing same, as well as to a strontium aluminate mixed oxide and method for producing same. The strontium aluminate mixed oxide precursor can be transformed into a strontium aluminate mixed oxide at relatively low temperature. The strontium aluminate mixed oxide is characterized by substantially spherically-shaped particles with a spongy- or porous bone-like microstructure. A luminescent material including a strontium aluminate mixed oxide is also provided.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.