[Problem to be solved] To provide an IGZO sputtering target occurring less arcing

[Means for solving the problem] An IGZO sputtering target comprising In, Ga, Zn, and O, wherein atom ratios for In, Ga, and Zn are: 0.30In/(In+Ga+Zn)0.36, 0.30Ga/(In+Ga+Zn)0.36 and 0.30Zn/(In+Ga+Zn)0.36, wherein a relative density is at least 96%, wherein average crystal grain size in surface of the sputtering target is 30.0 m or less, and wherein difference of the grain size in surface of the sputtering target is 20% or less (1.0Dmax/Dmin1.2).

A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb.sub.2O.sub.5 powder, a K.sub.2Co.sub.3 powder, and a Na.sub.2Co.sub.3 powder, pulverizing the mixed powder to achieve a grain size d.sub.50 of 100 m or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900 C. or higher and less than 1150 C., and a load of 150 to 400 kgf/cm.sup.2. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.

A sintered MnZn ferrite body containing main components comprising 53.30-53.80% by mol of Fe calculated as Fe.sub.2O.sub.3, 6.90-9.50% by mol Zn calculated as ZnO, and the balance of Mn calculated as MnO, and sub-components comprising 0.003-0.020 parts by mass of Si calculated as SiO.sub.2, more than 0 parts and 0.35 parts or less by mass of Ca calculated as CaCO.sub.3, 0.30-0.50 parts by mass of Co calculated as Co.sub.3O.sub.4, 0.03-0.10 parts by mass of Zr calculated as ZrO.sub.2, and 0-0.05 parts by mass of Ta calculated as Ta.sub.2O.sub.5, pre 100 parts by mass in total of the main components (calculated as the oxides), and having an average crystal grain size of 3 m or more and less than 8 m and a density of 4.65 g/cm.sup.3 or more.

Provided is a method for producing a wavelength conversion sintered body that emits light under irradiation of excitation light. The method for producing a wavelength conversion sintered body includes: preparing a molded body obtained by molding a mixture containing an -SiAlON fluorescent material and aluminum oxide particles and having a content of Ga of 15 ppm by mass or less; and primary calcining the molded body at a temperature in a range of 1,370 C. or more and 1,600 C. or less to obtain a first sintered body.

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-X.sub.S.sub.1-Y.sub.(I), in which 0<0.5, 0<0.5, Xis at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

A ceramic composite can include a first ceramic phase and a second ceramic phase. The first ceramic phase can include a silicon carbide. The second phase can include a boron carbide. In an embodiment, the silicon carbide in the first ceramic phase can have a grain size in a range of 0.8 to 200 microns. The first phase, the second phase, or both can further include a carbon. In another embodiment, at least one of the first ceramic phase and the second ceramic phase can have a median minimum width of at least 5 microns.