Patent classifications
C04B2235/786
Wavelength converter and light-emitting device having same
An alumina-based ceramic wavelength converter is described having a surface layer containing a second phase of alumina, preferably as alumina crystallites. The surface layer is formed as a result of the sintering process used to form the bulk ceramic which is itself substantially transparent. The ceramic wavelength converter is combined with a light emitting diode to form a light emitting device. Preferably, the ceramic wavelength converter is comprised of an alumina-based phosphor represented by a general formula A.sub.3B.sub.5O.sub.12:Ce, wherein A is Y, Sc, La, Gd, Lu, or Tb and B is Al, Ga or Sc.
Niobium oxide sintered compact, sputtering target formed from said sintered compact, and method of producing niobium oxide sintered compact
The present invention provides a niobium oxide sintered compact having a composition of NbO.sub.x (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.
Piezoelectric material, piezoelectric element, and electronic apparatus
The present invention provides a lead-free piezoelectric material having a high piezoelectric constant over a wide operating temperature region. Therefore, the present invention relates to a piezoelectric material including a perovskite-type metal oxide represented by general formula (1) below as a main component, wherein the average valence, of Sn contained in the general formula (1) lies between 2 and 4.
(Ba.sub.vCa.sub.wSn.sub.xTi.sub.yZr.sub.z)O.sub.3 (where 0.620v0.970,0.010w0.200,0.030x0.230,0.865y0.990,0z0.085, and 1.986v+w+x+y+z2.100)General Formula (1)
SILICON NITRIDE SINTERED BODY AND WEAR-RESISTANT MEMBER USING THE SAME
A silicon nitride sintered body having improved wear resistance and a wear-resistant member using the silicon nitride sintered body are provided. A silicon nitride sintered body according to an embodiment includes silicon nitride crystal grains and a grain boundary phase. An average value of solid solution oxygen amounts of the silicon nitride crystal grains in a 20 m20 m region at any cross section is not less than 0.2 wt %. In a 50 m50 m region at any cross section, an average value of major diameters of the silicon nitride crystal grains is not less than 0.1 m and not more than 10 m, and an average value of aspect ratios of the silicon nitride crystal grains is not less than 1.5 and not more than 10.
Liquid contact member, method for producing same, member for analyzers, analyzer, sliding member, and sliding device
Object To provide a liquid contact member having high hydrophilicity and exhibiting high dirt removal efficiency by cleaning. Solution A liquid contact member includes a ceramic including a plurality of crystal grains and a grain boundary phase, and the concentration of silicon on a liquid contact surface of the ceramic is higher than that of silicon on a virtual internal surface parallel to the liquid contact surface.
Shear binder agglomerates enabling high porosity in ceramic honeycomb bodies
A ceramic precursor mixtures for extrusion and firing into porous ceramics. The ceramic precursor mixtures include ceramic beads and green inorganic shear binder agglomerates. The green inorganic shear binder agglomerates can include inorganic filler particles and a polymeric binder. The green inorganic shear binder agglomerates can deform under an applied shear stress during mixing and/or extrusion such that they are smeared into a plurality of interbead gaps between adjacent ceramic beads or pore former particles. During firing, the smeared green inorganic shear binder agglomerates can sinter and react to form ribbons extending between, and interconnecting adjacent ceramic beads.
CERAMIC
There is disclosed a piezoelectric ceramic having the composition: a[PbTiO.sub.3]-b[SrTiO.sub.3]-c[BiFeO.sub.3]-d[(K.sub.xBi.sub.1-x)TiO.sub.3]; wherein 0.4<x<0.6; 0.1<a<0.4; 0.01<b0.2; c0.05; d0.01; and a+b+c+d=1 optionally comprising an A- or B-site metal dopant in an amount of up to 2 at. %.
cBN sintered material and cutting tool
Provided is a cBN sintered material for a tool body in which a ratio (PN.sub.TB/PN.sub.BN) of the number (PN.sub.TB) of cBN particles in contact with a Ti boride having a long axis of 150 nm or more to the total number (PN.sub.BN) of cBN particles is 0.05 or less.
LITHIUM TITANATE SINTERED PLATE
Provided is a lithium titanate sintered plate for use in a negative electrode of a lithium secondary battery. The lithium titanate sintered plate has a structure in which a plurality of primary grains are bonded, and has: a thickness of 10 to 290 m; a primary grain diameter of 0.70 m or less, the primary grain diameter being a mean grain diameter of the primary grains; a porosity of 21 to 45%; an open pore rate of 60% or more; a mean pore aspect ratio of 1.15 or more; a ratio of 30% or more of pores having an aspect ratio of 1.30 or more to all the pores; and a mean pore diameter of 0.70 m or less, wherein volume-based D10 and D90 pore diameters satisfy the relationship: 4.0D90/D1050.
Tungsten Silicide Target And Method Of Manufacturing Same
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 m or more per 80000 mm.sup.2 on the sputtering surface.