Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

An alumina sintered body according to the present invention includes a surface having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained through X-ray irradiation at 2=20 to 70. The alumina sintered body contains Mg and F, a Mg/F mass ratio is 0.05 to 3500, and a Mg content is 30 to 3500 ppm by mass. The alumina sintered body has a crystal grain size of 15 to 200 m. When a field of view of 370.0 m long372.0 m wide is photographed with a 1000-fold magnification and the photograph is visually observed, a number of pores having a diameter of 0.2 to 0.6 m is 250 or less.

An optical wavelength conversion member including a polycrystalline ceramic sintered body containing, as main components, Al.sub.2O.sub.3 crystal grains and crystal grains of a component represented by formula A.sub.3B.sub.5O.sub.12:Ce, wherein A is at least one element selected from Sc, Y and lanthanoids (except for Ce), and B is at least one element selected from Al and Ga. Further, the following relations are satisfied: 0%X25%, 9%Y45%, and 48%Z90%, wherein X represents a proportion corresponding to the ratio a/N, Y represents a proportion corresponding to the ratio b/N, and Z represents a proportion corresponding to the ratio c/N and a, b, c and N are as defined herein. Also disclosed is a light-emitting device including the optical wavelength conversion member.

A cemented carbide comprising a predetermined hard phase, a predetermined binder phase and a predetermined composite compound phase, wherein: a content ratio of each of the hard phase, the binder phase and the composite compound phase based on total contents of the hard phase, the binder phase and the composite compound phase in the cemented carbide falls within a predetermined range; and the composite compound phase comprises an aggregate containing a small-diameter aggregate which satisfies a predetermined condition and a large-diameter aggregate which satisfies a predetermined condition.

A supporting substrate for a composite substrate comprises a ceramic and has a polished surface for use in bonding. An orientation degree of the ceramic forming the supporting substrate at the polished surface is 50% or higher, and an aspect ratio of each crystal grain included in the supporting substrate is 5.0 or less.

The invention relates to a polycrystalline IR transparent material produced by sintering chalcogenide powder, e.g., ZnS powder, using hot uniaxial pressing followed by hot isostatic pressing. The microstructure of the material described in this disclosure is much finer than that found in material produced using the state of the art process. By using a powder with a particle size fine enough to improve sintering behavior but coarse enough to prevent a lowering of the wurtzite-sphalerite transition temperature, a highly transparent material with improved strength is created without degrading the optical properties. A high degree of transparency is achieved during hot pressing by applying pressure after the part has reached a desired temperature. This allows some degree of plastic deformation and prevents rapid grain growth which can entrap porosity. The crystallographic twins created during this process further inhibit grain growth during hot isostatic pressing.

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m.Math.K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/mm or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %[Zn]55 atomic %, 20 atomic %[In]40 atomic %, 5 atomic %[Ga]15 atomic %, and 5 atomic %[Sn]20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn.sub.2 O.sub.5.

The present invention is directed to a porous pre-densified CeO.sub.2 stabilized ZrO.sub.2 ceramic having a density of 50.0 to 95.0%, relative to the theoretical density of zirconia, and an open porosity of 5 to 50% as well as to ceramic having a density of 97.0 to 100.0%, relative to the theoretical density of zirconia, and wherein the grains of the ceramic have an average grain size of 50 to 1000 nm, methods for the preparation of the pre-densified and densified ceramics and their use for the manufacture of dental restorations.

A composite sintered body according to the present invention contains at least cubic boron nitride and a binder. Cubic boron nitride has a continuous skeleton structure as a result of bonding of a plurality of first cubic boron nitride particles to each other. The binder has a continuous structure as a result of bonding of a plurality of binder particles to each other, that are present in a region except for a bonding interface where the first cubic boron nitride particles are bonded to each other. Second cubic boron nitride particles isolated from the first cubic boron nitride particles forming the skeleton structure are dispersed in the continuous structure of the binder particles.