A ceramic electronic component includes: a ceramic body that includes internal electrodes; and an external electrode that includes a plurality of crystal particles containing Ba, Zn, Si, and O, the external electrode being formed on a surface of the ceramic body and connected to the internal electrodes.

A ceramic composite can include a first ceramic phase and a second ceramic phase. The first ceramic phase can include a silicon carbide. The second phase can include a boron carbide. In an embodiment, the silicon carbide in the first ceramic phase can have a grain size in a range of 0.8 to 200 microns. The first phase, the second phase, or both can further include a carbon. In another embodiment, at least one of the first ceramic phase and the second ceramic phase can have a median minimum width of at least 5 microns.

The present invention relates to a copper-ceramic composite comprisinga ceramic substrate which contains aluminum oxide, the aluminum oxide having particle sizes in the range of 0.01 m to 25 m and a quantity distribution of the particle sizes with a median value d.sub.50 and an arithmetic mean value d.sub.arith, and the ratio of d.sub.50 to d.sub.arith being in the range of 0.75 to 1.10, a coating made of copper or a copper alloy provided on the ceramic substrate.

The present invention is directed to a surface-coated cubic boron nitride sintered material tool including a cBN substrate and a hard coating layer formed on a surface of the cBN substrate and having an alternate laminated structure of A layer and B layer. The cBN substrate (sintered material) includes: a Ti compound, WC, AlN, TiB.sub.2, Al.sub.2O.sub.3, and cBN. The A layer has a composition of (Ti.sub.1-xAl.sub.x)N (0.4x0.7 in terms of atomic ratio). The B layer has a composition of (Cr.sub.1-y-zAl.sub.yM.sub.z)N (0.03y0.4 and 0z0.05 in terms of atomic ratio). A plastic deformation work ratio of the B layer is 0.35 to 0.50.

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

An oxide sintered body is provided which does not splash from the target surface even at the time of high power film formation, has a high film formation rate, and is used in a sputtering target capable of providing a high-refractive-index film.

An oxide sintered body is used which contains zinc, niobium, aluminum and oxygen as constituent elements and in which

Nb/(Zn+Nb+Al)=0.076 to 0.289

and

Al/(Zn+Nb+Al)=0.006 to 0.031,

where Zn, Nb and Al denote contents of zinc, niobium and aluminum, respectively.

In one aspect, sintered ceramic bodies are described herein which, in some embodiments, demonstrate improved resistance to wear and enhanced cutting lifetimes. For example, a sintered ceramic body comprises tungsten carbide (WC) in an amount of 40-95 weight percent, alumina in an amount of 5-30 weight percent and ditungsten carbide (W.sub.2C) in an amount of at least 1 weight percent.

A piezoelectric ceramic may be slightly deformed by firing, and a manufacturing method therefor, and an electronic component are disclosed. There is provided a piezoelectric ceramic including a plurality of crystal grains including a lead zirconate titanate-type crystal containing Zn, and Bi, and crystal grain boundaries existing between a plurality of the crystal grains, wherein a plurality of the crystal grains include first crystal grains, and wherein the first crystal grains have a content of at least one element of Zn and Bi present in the inside of the first crystal grains that is smaller than the content of the at least one element present in an area including the crystal grain boundaries that are in contact with the crystal grains. The piezoelectric ceramic is slightly deformed by firing and is capable of forming an electronic component which has little warp or deformation even if it is thin.

A sintered material includes cubic boron nitride grains and a binder, a grain size D50 of the cubic boron nitride grains when a cumulative value of the cubic boron nitride grains is 50% in an area-based grain size distribution being more than 0.5 m and less than or equal to 5 m, more than or equal to 70 volume % and less than or equal to 98 volume % of the cubic boron nitride grains being included in the sintered material, the binder being composed of A.sub.1-xCr.sub.xN, where 0x1, and a remainder, the remainder being composed of at least one of a first element and a compound including the first element and a second element, the first element being one or more elements selected from a group consisting of W, Co, Ni, Mo, Al, and Cr, the second element being one or more elements selected from a group consisting of nitrogen, carbon, oxygen, and boron.

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.