A refractory object may include a zircon body that may include at least about 0.1 wt. % and not greater than about 5.5 wt. % of an Al.sub.2O.sub.3 containing component for a total weight of the zircon body. The zircon body may further include at least about 25 wt. % and not greater than about 35 wt. % of a SiO.sub.2 component for a total weight of the zircon body.

There is provided a lead- and potassium-free piezoelectric material having a high piezoelectric constant and a satisfactory insulation property and a piezoelectric element that includes the piezoelectric material. The piezoelectric material contains a perovskite-type metal oxide having the general formula (1): (Na.sub.xBa.sub.1-y)(Nb.sub.yTi.sub.1-y)O.sub.3 (wherein x satisfies 0.80?x?0.95, and y satisfies 0.85?y?0.95); and at least one rare-earth element selected from La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, wherein the rare-earth element content is more than 0 mol % and 5 mol % or less of the amount of perovskite-type metal oxide. The piezoelectric element includes the piezoelectric material.

A dielectric ceramic composition and a multilayer ceramic capacitor containing the same are provided. The dielectric ceramic composition contains a base material powder represented by (1?x)BaTiO.sub.3?xPbTiO.sub.3 containing a first main ingredient represented by BaTiO.sub.3 and a second main ingredient represented by PbTiO.sub.3, wherein x satisfies 0.0025?x?0.4. The multilayer ceramic capacitor includes a ceramic body in which dielectric layers containing the dielectric ceramic composition are alternately stacked with first and second internal electrodes, and first and second external electrodes formed on both end portions of the ceramic body and respectively electrically connected to the first and second internal electrodes.

A SiAlON sintered body according to the present invention is represented by Si.sub.6-zAl.sub.zO.sub.zN.sub.8-z (0<z4.2) and has an open porosity of 0.1% or less and a relative density of 99.9% or more. A ratio of a total of intensities of maximum peaks of components other than SiAlON to an intensity of a maximum peak of the SiAlON in an X-ray diffraction diagram is 0.005 or less.

A lead-free lithium doped potassium sodium niobate piezoelectric ceramic material powdered form and having a single crystalline phase and uses thereof are described. Methods of making the said piezoelectric ceramic material are also described.

Disclosed herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also disclosed herein are lithium-stuffed garnet thin films having fine grains therein. Also disclosed herein are methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also disclosed herein are methods for preparing dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also disclosed herein are sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a transverse intensity of 50 MPa or more, and a bulk resistance of 100 mcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein an average length of cracks existing in the IGZO sintered compact is 3 m or more and 15 m or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

A polycrystalline super hard construction comprises a body of polycrystalline diamond (PCD) material and a plurality of interstitial regions between inter-bonded diamond grains forming the polycrystalline diamond material. The body of PCD material comprises a working surface positioned along an outside portion of the body, and a first region adjacent the working surface, the first region being a thermally stable region. The first region and/or a further region and/or the body of PCD material has/have an average oxygen content of less than around 300 ppm. A method of forming such a construction is also disclosed.

Disclosed herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also disclosed herein are lithium-stuffed garnet thin films having fine grains therein. Also disclosed herein are methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also disclosed herein are methods for preparing dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also disclosed herein are sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.