Patent classifications
C04B2235/786
Piezoelectric Component and Method for Producing a Piezoelectric Component
A method for producing a piezoelectric component is disclosed. In an embodiment, the method includes producing a ceramic precursor material of the general formula Pb.sub.1-x-y-(2a-b)/2V.sub.(2a-b)/2Ba.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where RE is a rare earth metal and V is a Pb vacancy, mixing the ceramic precursor material with a sintering aid, forming a stack which includes alternating layers including the ceramic precursor material and a layer including Cu and debindering and sintering the stack thereby forming the piezoelectric component having Cu electrodes and at least one piezoelectric ceramic layer including Pb.sub.1-x-y-[(2a-b)/2]-p/2V.sub.[(2a-b)/2-p/2]Cu.sub.pBa.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where 0x0.035, 0y0.025, 0.42z0.5, 0.0045a0.009, 0.009b0.011, and 2a>b, p2ab.
CORROSION-RESISTANT COMPONENTS AND METHODS OF MAKING
A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a corrosion-resistant non-porous layer associated with the ceramic insulating substrate, the corrosion-resistant non-porous layer having a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, the corrosion-resistant non-porous layer characterized by a microstructure substantially devoid of microcracks and fissures, and having an average grain size of at least about 100 nm and at most about 100 m. Assemblies including corrosion-resistant components and methods of making are also disclosed.
Mg-CONTAINING ZINC OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME
There is provided a platy Mg-containing zinc oxide sintered compact containing 1 to 10 wt % Mg as a first dopant element and 0.005 wt % or more at least one second dopant element selected from the group consisting of Al, Ga and In, the balance consisting essentially of ZnO and optionally at least one third dopant element selected from the group consisting of Br, CI, F, Sn, Y, Pr, Ge, B, Sc, Si, Ti, Zr, Hf, Mn, Ta, W, Cu, Ni, Cr, La, Gd, Bi, Ce, Sr and Ba, wherein the (002)-plane or (100)-plane orientation in the plate surface is 60% or more. The Mg-containing zinc oxide sintered compact of the present invention has excellent properties such as high orientation despite solid dissolution of Mg.
ZINC OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME
There is provided a platy zinc oxide sintered compact containing 0.80 wt % or less at least one first dopant element selected from the group consisting of Al, Ga and In, the balance consisting essentially of ZnO and optionally at least one second dopant element selected from the group consisting of Br, Cl, F, Sn, Y, Pr, Ge, B, Sc, Si, Ti, Zr, Hf, Mn, Ta, W, Cu, Ni, Cr, La, Gd, Bi, Ce, Sr and Ba, the second dopant element being optional component, wherein the (002)-plane orientation in the plate surface is 60% or more. The zinc oxide sintered compact of the present invention has excellent properties such as high orientation in addition to transparency and conductivity.
Silicon nitride substrate and method for producing silicon nitride substrate
A silicon nitride substrate including a phase encompassed of silicon nitride particles, and intergranular phase formed from a sintering aid, wherein a separation layer is formed on the surface of a molded body including silicon nitride powder, sintering aid powder, and organic binder, by using a boron nitride paste containing boron nitride powder, organic binder, and organic solvent; the separation layer and molded body are heated; the organic binder is removed from the separation layer and molded body; subsequently molded bodies stacked with a separation layer therebetween, are sintered. Boron nitride paste contains 0.01 to 0.50% by oxygen mass and 0.001 to 0.5% by carbon mass, and c/a is within range of 0.02 to 10.00, where c is oxygen content in the powder of the boron nitride paste, and a carbon content in the degreased separation layer, which includes 0.2 to 3.5 mg/cm.sup.2 of hexagonal boron nitride powder.
INJECTION MOLDING OF AQUEOUS SUSPENSIONS OF HIGH-TEMPERATURE CERAMICS
A method for ambient temperature injection molding of ceramic bodies, including combining ceramic powder, water, and dispersant to yield a first admixture, combining water and water soluble polymer to yield a second admixture, combining the first and second admixture to yield a homogeneous slurry, flowing the homogeneous slurry into a mold to yield a molded green body, and removing the green body from the mold, all of which are performed at room temperature. The slurry exhibits yield psuedoplastic flow characteristics and contains more than 50 weight percent ceramic powder and less than 5 weight percent water soluble polymer.
PCBN material, method for making same, tools comprising same and method of using same
PCBN material consisting of cBN grains dispersed in a matrix, the content of the cBN grains being in the range of about 35 to about 70 volume % of the PCBN material. The matrix comprises at least one kind of chemical compound that includes aluminum (Al) and at least one kind of chemical compound that includes titanium (Ti). The size distribution of the cBN grains exposed at a surface of the PCBN material is such that at least about 50% percent of the total equivalent circle area (ECA) arises from cBN intercept lengths up to 5 microns. At least about 20 percent of the total ECA arises from cBN intercept lengths greater than about 5 microns.
Material based on SiAlONs
Sialon materials contain HFO.sub.2 in a maximum of 1 mass-% as a sintering additive, methods of producing them and methods of using them an /-SiAlON material with 5 mass % to 50 mass %, /(/) RE--SiAlON wherein RE stands for at least one cation selected from the group consisting of Y, Sc, Lu, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Mg or Ca, and 95 mass % to 50 mass %, /(/) -SiAlON and of an Hf-containing amorphous or partially crystalline grain-boundary phase with a proportion with respect to the overall material is below 10 vol %, wherein the Hf content of the sintered material is 0.2 mass % to 1.0 mass %, and of a dispersion phase comprising globular particles with a mean particle size of from 0.2 m to 15 m, containing at least one hard material selected from the group consisting of SiC, TiN, TiC, Ti(C,N), carbides of further elements of groups IVb, Vb and VIb of the periodic system, nitrides of further elements of groups IVb, VB and VIb of the periodic system, scandium carbide and scandium oxycarbide, which are contained in the sintered compact in a proportion from 5 vol % to 30 vol %.
Polycrystalline porous Al2O3—bodies on the basis of molten aluminum oxide comprising an increased toughness and use thereof
The present invention relates to temperature-treated polycrystalline porous Al.sub.2O.sub.3 bodies comprising an amount of aluminum oxide of more than 97% by weight, an amount of other oxide alloying components of a total of less than 3% by weight, a macroporosity of between 5 and 30% by volume, wherein the Al.sub.2O.sub.3 bodies are composed of a plurality of Al.sub.2O.sub.3 primary crystals comprising a crystallite size of between 20 and 100 m.
Metal-ceramic substrate and method for producing a metal-ceramic substrate
The invention relates to a metal-ceramic substrate and to a method for the production thereof, the substrate including at least one ceramic layer having first and second surface sides, at least one of the surface sides of which is provided with a metallization, wherein the ceramic material forming the ceramic layer contains aluminum oxide, zirconium dioxide and yttrium oxide. The ceramic layer contains aluminum oxide, zirconium dioxide and yttrium oxide in the following proportions, in each case in relation to the total weight thereof: zirconium dioxide between 2 and 15 percent by weight; yttrium oxide between 0.01 and 1 percent by weight; and aluminum oxide between 84 and 97 percent by weight, wherein the average grain size of the aluminum oxide used is between 2 and 8 micrometers and the ratio of the length of the grain boundaries of the aluminum oxide grains to the total length of all the grain boundaries is greater than 0.6.