To provide a Tb-containing rare earth-aluminum garnet ceramic which has a Verdet constant similar to that of a TGG single crystal used in an isolator, has an insertion loss and extinction ratio equal to or greater than those of a TGG single crystal, generates less heat when a high-power laser is applied thereto, and is unlikely to cause a thermal lens effect or thermal birefringence. The present invention relates to: a Tb-containing rare earth-aluminum garnet ceramic including a garnet polycrystal represented by the compositional formula (Tb.sub.xRe.sub.1-x).sub.3(Al.sub.ySc.sub.1-y).sub.5O.sub.12 wherein Re is at least one element selected from a group consisting of Y and Lu, x=1.0-0.5, and y=1.0-0.6, and including Si and at least one element selected from a group consisting of Ca and Mg; a method for producing same; and an isolator device obtained using the ceramic.

This disclosure provides systems, methods, and apparatus related to high-temperature thermal energy storage. In one aspect, a composite material includes a ceramic and graphite flakes dispersed in the ceramic. The ceramic serves as a matrix of the composite material. The ceramic is an oxide, a carbide, a boride, or a nitride. The graphite flakes are about 20 weight % to 35 weight % of the composite material. The composite material has a porosity of about 5% to 40%.

A cBN sinter comprising cubic boron nitride grains and a binder phase, the binder phase comprising Ti.sub.2CN and TiAl.sub.3, wherein the ratio I.sub.Ti2CN/I.sub.TiAl3 of the peak intensity I.sub.T2CN of Ti.sub.2CN appearing at 2=41.9 to 42.2 to the peak intensity I.sub.TiAl3 of TiAl.sub.3 appearing at 2=39.0 to 39.3 is in a range of 2.0 to 30.0 in an XRD measurement.

The invention relates in general to sintering under pressure and with electrical current, often termed spark plasma sintering (SPS). Particular aspects of the invention are directed to a sintering device, a sintering process, a ceramic body product, an assembly comprising the ceramic body and the use of a graphite layer in a sintering process. The invention relates to a device having a sintering chamber, the sintering chamber being bordered by the following device parts: i. a first punch surface of a first punch; ii. a second punch surface of a second punch; and iii. an interior surface of a die; wherein: the punches are adapted and arranged to apply a pressure of at least 1 MPa along a compression axis to a target in the sintering chamber; the first punch and the second punch are connected to an electrical power source.

A ceramic body being configured of mainly BaTiO.sub.3-based crystalline particles in which a part of Ba is substituted with at least one rare earth element, wherein the ceramic body contains Ba.sub.6Ti.sub.17O.sub.40 crystalline particles of from 1.0 to 10.0% by mass.

Doped titanium niobate is provided, which has a chemical structure of Ti.sub.(1-x)M1.sub.xNb.sub.(2-y)M2.sub.yO.sub.(7-z)Q.sub.z or Ti.sub.(2-x)M1.sub.xNb.sub.(10-y)M2.sub.yO.sub.(29-z)Q.sub.z, wherein M1 is Li, Mg, or a combination thereof; M2 is Fe, Mn, V, Ni, Cr, or a combination thereof; Q is F, Cl, Br, I, S, or a combination thereof; 0x0.15; 0y0.15; 0.01z2; 0x0.3; 0y0.9; and 0.01z8.

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 m, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

A process for the preparation of a ceramic body, comprising the steps: a. providing a plurality of particles; b. providing a device that comprises a sintering chamber bordered by a die; c. introducing the particles into the sintering chamber; d. applying a pressure P in the range from 1 MPa to 80 MPa to the plurality of particles in the sintering chamber to obtain the ceramic body, wherein a temperature in the sintering chamber, during preparation of the ceramic body, is controlled so that the temperature at a centre of the sintering chamber is lower than the temperature at an interior surface of the die.

A phosphor plate includes a plate-shaped sintered body having a light incident surface and a light exit surface, and a glass coating layer provided at the light exit surface, and the sintered body includes (Y.sub.1-x-y, Gd.sub.x, Ce.sub.y).sub.3Al.sub.5O.sub.12 particles, where x and y fall within ranges 0.018x0.054 and 0.018y0.025, and Al.sub.2O.sub.3 particles, the (Y.sub.1-x-y, Gd.sub.x, Ce.sub.y).sub.3Al.sub.5O.sub.12 particles and the Al.sub.2O.sub.3 particles have an overall average particle diameter of 3.0 m to 5.0 m, the (Y.sub.1-x-y, Gd.sub.x, Ce.sub.y).sub.3Al.sub.5O.sub.12 particles have a concentration of 15 vol % to 25 vol % with respect to a total amount 100 vol % of the (Y.sub.1-x-y, Gd.sub.x, Ce.sub.y).sub.3Al.sub.5O.sub.12 particles and the Al.sub.2O.sub.3 particles, the sintered body has a thickness of 90 m to 160 m.

A ceramic substrate includes a base body, and an electrical conductor pattern embedded in the base body. The base body is composed of ceramics. The electrical conductor pattern has, as a main component, a solid solution having a body-centered cubic lattice structure in which copper is solid-dissolved in tungsten.