A method for producing an alumina sintered body, including: a step of applying an alkaline earth metal compound onto a surface of an alumina raw material which is an unsintered alumina compact or an alumina sintered body; and a step of subjecting the alumina raw material to which the alkaline earth metal compound has been applied to heat treatment at a temperature of 1200 C. or more for 5 minutes or more and 300 minutes or less.

Provided are: an oxide sintered material including an In.sub.2O.sub.3 crystal phase, a Zn.sub.4In.sub.2O.sub.7 crystal phase and a ZnWO.sub.4 crystal phase, wherein the roundness of crystal particles composed of the ZnWO.sub.4 crystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.

A device is disclosed. The device includes a first insulating film structure, a plurality of conductor layers above the first insulating film structure, a Ti structure and a nanocube structure between respective layers of the plurality of conductor layers, the nanocube structure above the Ti structure, and a second insulating film structure above a topmost conductor layer of the plurality of conductor layers.

A method for producing an alumina sintered body, including: a step of applying an alkaline earth metal compound onto a surface of an alumina raw material which is an unsintered alumina compact or an alumina sintered body; and a step of subjecting the alumina raw material to which the alkaline earth metal compound has been applied to heat treatment at a temperature of 1200 C. or more for 5 minutes or more and 300 minutes or less.

An alumina sintered body including an inner layer in which alumina crystal grains contained have an average aspect ratio of 1.0 to 2.0 and an outer layer which covers at least a part of the inner layer from outside and in which alumina crystal grains contained have an average aspect ratio of more than 2.0, the alumina sintered body being free from silicon except unavoidable impurities.

The invention relates to a copper/ceramic composite comprisinga ceramic substrate which contains aluminum oxide, a coating which lies on the ceramic substrate and which is made of copper or a copper alloy, wherein the copper or the copper alloy has a particle size number distribution with a median value d.sub.50, an arithmetic mean value d.sub.arith, and a symmetry value S(Cu)=d.sub.50/d.sub.arith; the aluminum oxide has a particle size number distribution with a median value d.sub.50, an arithmetic mean value d.sub.arith, and a symmetry value S(Al.sub.2O.sub.3)=d.sub.50/d.sub.arith; and S(Al.sub.2O.sub.3) and S(Cu) satisfy the following condition: 0.7<S(Al.sub.2O.sub.3)/S(Cu)1.4.

A Co.sub.2Z hexaferrite composition is provided containing molybdenum and one or both of barium and strontium, having the formula (Ba.sub.2Sr.sub.(3-Z)Co.sub.(2+X))Mo.sub.xFe.sub.(y-2x)O.sub.41 where x=0.01 to 0.20; y=20 to 24; and z=0 to 3. The composition can exhibit high permeabilities and equal or substantially equal values of permeability and permittivity while retaining low magnetic and dielectric loss tangents and loss factors. The composition is suitable for high frequency applications such as ultrahigh frequency and microwave antennas and other devices.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

There is provided a platy zinc oxide sintered compact containing 0.80 wt % or less at least one first dopant element selected from the group consisting of Al, Ga and In, the balance consisting essentially of ZnO and optionally at least one second dopant element selected from the group consisting of Br, Cl, F, Sn, Y, Pr, Ge, B, Sc, Si, Ti, Zr, Hf, Mn, Ta, W, Cu, Ni, Cr, La, Gd, Bi, Ce, Sr and Ba, the second dopant element being optional component, wherein the (002)-plane orientation in the plate surface is 60% or more. The zinc oxide sintered compact of the present invention has excellent properties such as high orientation in addition to transparency and conductivity.