The disclosure describes techniques for forming a surface layer of an article including a CMC using a cast. In some examples, the surface layer includes three-dimensional surface features, which may increase adhesion between the CMC and a coating on the CMC. In some examples, the surface layer may include excess material, with or without three-dimensional surface features, which is on the CMC. The excess material may be machined to remove some of the excess material and facilitate conforming the article to dimensional tolerances, e.g., for fitting the article to another component. The excess material may reduce a likelihood that the CMC (e.g., reinforcement material in the CMC) is damaged by the machining.

A ceramic bonding material including at least one fibrous material, a flux agent and a thickening agent wherein the ceramic bonding material fired at a set temperature to bond the two adjacent substrate faces.

A joining material used for joining side surfaces of a plurality of silicon carbide-based honeycomb segments to each other to produce a silicon carbide-based honeycomb structure. The joining material contains from 0.1 to 50% by mass of processed powder generated in the production of the silicon carbide-based honeycomb segments and/or the silicon carbide-based honeycomb structure. The joining material has an average particle diameter D50 of from 0.5 to 60 μm.

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.

A seal system includes a ceramic component that has a non-core-gaspath surface region that defines a first surface roughness and a core gaspath surface region. A metallic component is situated adjacent the non-core-gaspath surface region. A coating system is disposed on the ceramic component. The coating system includes a silicon-containing layer on the non-core-gaspath surface region and a barrier layer that has a first section on the silicon-containing layer and a second section on the core-gaspath region and that is connected to the first section. The surface of the barrier layer has a second surface roughness that is less than the first surface roughness. The first section is in contact with the metallic component and the second section serves as an environmental barrier on the core-gaspath region.

A seal system includes a ceramic component, a metallic component, a coating system. The ceramic component has a first surface region that defines a first surface roughness. The metallic component is situated adjacent to the first surface region and has a second surface region facing the first surface region. The coating system includes a silicon-containing layer on the surface region of the ceramic component and barrier layer on the silicon-containing layer. The silicon containing layer has a surface in contact with the barrier layer and the barrier layer has a surface in contact with the metallic component. The surface of the barrier layer has a second surface roughness that is less than the first surface roughness. The barrier layer serves to limit interaction between silicon of the silicon-containing layer and elements of the metallic component. The barrier layer includes at least one of mullite, zircon, or hafnon.

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

Provided are a manufacturing method for a composite wafer and a composite wafer obtained by using the manufacturing method, the manufacturing method including: preparing a first substrate in which a first layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; preparing a second substrate in which a second layer of any one of oxides, oxynitrides, and nitrides is disposed on one surface; forming a silicon layer on a surface of one of the first layer or the second layer; activating, with plasma, a surface of at least one of the silicon layer or another of the first layer or the second layer; and bonding the first substrate and the second substrate.

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

A ceramic structure includes a base body, and a thermoelectric device having a part in directly contact with the base body. The base body is a ceramic consisting of aluminum oxide. The thermoelectric device comprises a conductor part that is a sintered body having an alloy of tungsten and rhenium, as a main component, and including nickel oxide, aluminum oxide and silicon dioxide.