A plugged honeycomb structure includes: a plurality of honeycomb segments, a bonding layer, and a plugging portions to plug open ends of cells of each of the honeycomb segments. The honeycomb segment is configured so that the cells having at least two kinds of different shapes are disposed in a cross section orthogonal to an extension direction of the cells, the honeycomb segment has a center region and an circumferential region located in the circumference of the center region, the center region has a cell arrangement pattern such that inflow cells surround one outflow cell, in the inflow end face of the honeycomb segment, the circumferential region has an open frontal area that is smaller than an open frontal area of the center region, the segment circumferential wall of the honeycomb segment and the bonding layer have a special thickness.

A laminated glazing having a first ply connected to a second ply by a polymeric interlayer; and a solar control coating located on at least one of the major surfaces thereof, the solar control coating including: a first phase adjustment layer; a first metallic layer located over the first phase adjustment layer; a first primer layer located over the first metallic layer; a second phase adjustment layer located over the first primer layer; a second metallic layer located over the second phase adjustment layer; a second primer layer located over the second metallic layer; a third phase adjustment layer located over the second primer layer; a third metallic layer located over the third phase adjustment layer; a third primer layer located over the third metallic layer; a fourth phase adjustment layer located over the third primer layer; and a protective layer located over the fourth phase adjustment layer.

There is herein described a ceramic wavelength converter having a high reflectivity reflector. The ceramic wavelength converter is capable of converting a primary light into a secondary light and the reflector comprises a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer. The buffer layer is non-absorbing with respect to the secondary light and has an index of refraction that is less than an index of refraction of the ceramic wavelength converter. Preferably the reflectivity of the reflector is at least 80%, more preferably at least 85% and even more preferably at least 95% with respect to the secondary light emitted by the converter.

The disclosure describes techniques for forming a surface layer of an article including a CMC using a cast. In some examples, the surface layer includes three-dimensional surface features, which may increase adhesion between the CMC and a coating on the CMC. In some examples, the surface layer may include excess material, with or without three-dimensional surface features, which is on the CMC. The excess material may be machined to remove some of the excess material and facilitate conforming the article to dimensional tolerances, e.g., for fitting the article to another component. The excess material may reduce a likelihood that the CMC (e.g., reinforcement material in the CMC) is damaged by the machining.

A method of metallizing a ceramic substrate includes depositing a barrier layer onto the substrate, depositing a tie layer onto the barrier layer, and depositing a metal layer onto the tie layer to metallize the substrate. The barrier layer may include an oxygen rich material, a nitrogen rich material, or a carbon rich material.

There is herein described a ceramic wavelength converter having a high reflectivity reflector. The ceramic wavelength converter is capable of converting a primary light into a secondary light and the reflector comprises a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer. The buffer layer is non-absorbing with respect to the secondary light and has an index of refraction that is less than an index of refraction of the ceramic wavelength converter. Preferably the reflectivity of the reflector is at least 80%, more preferably at least 85% and even more preferably at least 95% with respect to the secondary light emitted by the converter.

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90 is between the bevel of the device substrate and the handle substrate.

The disclosure describes techniques for forming a surface layer of an article including a CMC using a cast. In some examples, the surface layer includes three-dimensional surface features, which may increase adhesion between the CMC and a coating on the CMC. In some examples, the surface layer may include excess material, with or without three-dimensional surface features, which is on the CMC. The excess material may be machined to remove some of the excess material and facilitate conforming the article to dimensional tolerances, e.g., for fitting the article to another component. The excess material may reduce a likelihood that the CMC (e.g., reinforcement material in the CMC) is damaged by the machining.

A supporting substrate for a composite substrate comprises a ceramic and has a polished surface for use in bonding. An orientation degree of the ceramic forming the supporting substrate at the polished surface is 50% or higher, and an aspect ratio of each crystal grain included in the supporting substrate is 5.0 or less.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<.sub.1/.sub.2<0.9 and relational expression (2) 0.7<.sub.3/.sub.4<0.9 holds, where .sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30 C. to 300 C. and .sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30 C. to 300 C., and .sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30 C. to 1000 C. and .sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30 C. to 1000 C.