A ceramic bonding material including at least one fibrous material, a flux agent and a thickening agent wherein the ceramic bonding material fired at a set temperature to bond the two adjacent substrate faces.

A joining material used for joining side surfaces of a plurality of silicon carbide-based honeycomb segments to each other to produce a silicon carbide-based honeycomb structure. The joining material contains from 0.1 to 50% by mass of processed powder generated in the production of the silicon carbide-based honeycomb segments and/or the silicon carbide-based honeycomb structure. The joining material has an average particle diameter D50 of from 0.5 to 60 μm.

A method for the assembly of a metal part and a ceramic part, including the following steps: supplying a solid ceramic part of the alumina type; supplying a solid metal part, the metal being selected from platinum and tantalum, or an alloy including a majority of one of these metals; depositing at least one layer, called interface layer, on at least one of the solid parts, the interface layer containing magnesium oxide; bringing into contact the solid metal part and the solid ceramic part such that the interface layer is located between the solid parts; and hot densification under pressure of the solid parts brought into contact, to create a close bond between the solid parts and form a spinel from the interface layer. An electrical device, such as a capacitive sensor having a sensitive part produced according to the present method, is also provided.

A member for a semiconductor manufacturing apparatus includes a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode, a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion, a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the ring-shaped joint portion, and a gas flow channel. The gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in the thickness direction of the ceramic plate and an internal gas flow channel that passes from the upper surface to the lower surface of the dense plug while winding through the dense plug. The gas flow channel passes inside of an inner periphery of the joint portion.

A ceramic joined body includes: a pair of ceramic plates; and an electrode layer that is interposed between the pair of ceramic plates, in which the electrode layer is embedded in at least one of the pair of ceramic plates, and in an outer edge of the electrode layer, a joint surface between the at least one of the pair of ceramic plates and the electrode layer has an inclination with respect to a thickness direction of the pair of ceramic plates and the electrode layer.

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

An electronic device housing, a manufacturing method thereof, and an electronic device are provided. The housing includes a bottom plate, and a middle frame connected to the bottom plate. The middle frame is made of glass, and the bottom plate is made of sapphire; or the bottom plate is made of glass, and the middle frame is made of sapphire. An interface-free continuous connection is provided between the bottom plate and the middle frame.

A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 μm, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

A method for manufacturing a composite panel is described. The method includes producing a first wall, a second wall, a third wall and a fourth wall from composite materials including an oxide matrix and long oxide fibres; from the first and second walls, producing a cellular core including a plurality of cells, each cell including a first end and an opposing second end, covering the first and second ends of the cells of the cellular core with the third wall and the fourth wall, respectively, so as to close the ends of said cells.

A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al.sub.2O.sub.3, and is free from AlN.