Patent classifications
C04B2237/064
Solar control coating for laminated glazing
A laminated glazing having a first ply connected to a second ply by a polymeric interlayer; and a solar control coating located on at least one of the major surfaces thereof, the solar control coating including: a first phase adjustment layer; a first metallic layer located over the first phase adjustment layer; a first primer layer located over the first metallic layer; a second phase adjustment layer located over the first primer layer; a second metallic layer located over the second phase adjustment layer; a second primer layer located over the second metallic layer; a third phase adjustment layer located over the second primer layer; a third metallic layer located over the third phase adjustment layer; a third primer layer located over the third metallic layer; a fourth phase adjustment layer located over the third primer layer; and a protective layer located over the fourth phase adjustment layer.
CERAMIC/ALUMINUM BONDED BODY, INSULATING SUBSTRATE, LED MODULE, CERAMIC MEMBER, METHOD FOR PRODUCING CERAMIC/ALUMINUM BONDED BODY, AND METHOD FOR PRODUCING INSULATING SUBSTRATE
In a ceramic/aluminum bonded body according to the present invention, a ceramic member and an aluminum member formed of aluminum or an aluminum alloy are bonded to each other, the ceramic member has a ceramic main body formed of silicon nitride, and an aluminum nitride layer or an aluminum oxide layer formed on the surface of the ceramic main body to which the aluminum member is bonded, the ceramic member and the aluminum member are bonded to each other through the aluminum nitride layer or the aluminum oxide layer, the ceramic main body is provided with silicon nitride phases and a glass phase formed between the silicon nitride phases, Al is present in a portion of the glass phase of the ceramic main body at an interface with the aluminum nitride layer or aluminum oxide layer.
MULTILAYER SINTERED CERAMIC BODY
Disclosed herein is a multilayer sintered ceramic body comprising at least one first layer comprising poly crystalline YAG, wherein the at least one first layer comprising poly crystalline YAG comprises pores wherein the pores have a maximum size of from 0.1 to 5 ?m, at least one second layer comprising alumina and zirconia wherein the zirconia comprises at least one of stabilized and partially stabilized zirconia, and at least one third layer comprising at least one of YAG, alumina, and zirconia, wherein an absolute value of the difference in coefficient of thermal expansion (CTE) between the at least one first, second and third layers is from 0 to 0.75?10-6/? C. as measured in accordance with ASTM E228-17, wherein the at least one first, second and third layers form a unitary, multilayer sintered ceramic body. Methods of making are also disclosed.
Sensor element, gas sensor, and method for manufacturing sensor element
A sensor element (10) having a laminate structure, and extending in an axial direction AX, the sensor element including a first and second ceramic layers (118B, 115) disposed apart from each other in a laminating direction; a third ceramic layer (118) intervening between the first and second ceramic layers in the laminating direction and having a hollow space (10G) formed therein; and an internal space which is the hollow space surrounded by the first ceramic layer, the second ceramic layer, and the third ceramic layer, wherein, at a periphery (10f) of the internal space, a fourth ceramic layer (181) containing as a main component a ceramic material different from that contained as a main component in the first and third ceramic layers intervenes between the first ceramic layer and the third ceramic layer which are exposed to the internal space. Also disclosed is a method for manufacturing the gas sensor element.
Coatings for Ceramic Substrates
A method of metallizing a ceramic substrate includes depositing a barrier layer onto the substrate, depositing a tie layer onto the barrier layer, and depositing a metal layer onto the tie layer to metallize the substrate. The barrier layer may include an oxygen rich material, a nitrogen rich material, or a carbon rich material.
Electrostatic chuck
An electrostatic chuck includes a dielectric layer including an oriented alumina sintered body having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained by the irradiation of an X-ray in the 2 range of 20 to 70; a ceramic layer integrated with a surface disposed opposite a wafer placement surface of the dielectric layer; and an electrostatic electrode between the dielectric layer and the ceramic layer.
OPTICAL COMPONENT
An optical component includes a first substrate including a phosphor substrate and a second substrate including a translucent substrate and supporting the first substrate. A bonding layer is provided between the first substrate and the second substrate, and the bonding layer includes at least one kind of element contained on a surface of the first substrate facing the second substrate and at least one kind of element contained on a surface of the second substrate facing the first substrate. The bonding layer contains 2% by weight or more and 45% by weight or less of at least one kind of metal element which is not included in any of the first substrate and the second substrate.
METHOD FOR PRODUCING SEMICONDUCTOR PRODUCTION DEVICE COMPONENT, AND SEMICONDUCTOR PRODUCTION DEVICE COMPONENT
A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu.sub.2O.sub.3, Gd.sub.2O.sub.3 and Al.sub.2O.sub.3 disposed between the first ceramic member and the second ceramic member.
COMPONENT FOR SEMICONDUCTOR PRODUCTION DEVICE, AND PRODUCTION METHOD OF COMPONENT FOR SEMICONDUCTOR PRODUCTION DEVICE
A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al.sub.2O.sub.3, and is free from AlN.
BONDED CERAMIC ASSEMBLY
The bonded ceramic assembly of the present disclosure includes a first substrate made of ceramic, a second substrate made of ceramic, and a bonding layer positioned between the first substrate and the second substrate. The bonding layer contains aluminum, at least one of calcium and magnesium, a rare earth element, silicon, and oxygen. Out of a total 100 mass % of all of the components making up the bonding layer, the bonding layer contains from 33 mass % to 65 mass % aluminum in terms of oxide, a total of from 27 mass % to 60 mass % calcium and magnesium in terms of oxide, and from 2 mass % to 12 mass % rare earth element in terms of oxide. The silicon content, in terms of oxide, of the surface of the bonding layer is greater than in the interior of the bonding layer.