Patent classifications
C04B2237/127
COPPER/CERAMIC JOINED BODY, INSULATED CIRCUIT BOARD, METHOD FOR PRODUCING COPPER/CERAMIC JOINED BODY, AND METHOD FOR PRODUCING INSULATED CIRCUIT BOARD
There is provided a copper/ceramic bonded body of the present invention in which a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride are bonded to each other, in which an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on the ceramic member side between the copper member and the ceramic member, a Mg solid solution layer in which Mg is dissolved in a Cu matrix phase is formed between the active metal nitride layer and the copper member, and the active metal is present in the Mg solid solution layer.
FORMING A SURFACE LAYER OF A CERAMIC MATRIX COMPOSITE ARTICLE
The disclosure describes techniques for forming a surface layer of an article including a CMC using a cast. In some examples, the surface layer includes three-dimensional surface features, which may increase adhesion between the CMC and a coating on the CMC. In some examples, the surface layer may include excess material, with or without three-dimensional surface features, which is on the CMC. The excess material may be machined to remove some of the excess material and facilitate conforming the article to dimensional tolerances, e.g., for fitting the article to another component. The excess material may reduce a likelihood that the CMC (e.g., reinforcement material in the CMC) is damaged by the machining.
Circuit substrate and semiconductor device
To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.
Production method for copper/ceramic joined body, production method for insulated circuit board, copper/ceramic joined body, and insulated circuit board
A method of producing a copper/ceramic bonded body, the copper member having a composition having a Cu purity of 99.96 mass % or more, a balance of inevitable impurities, a P content of 2 mass ppm or less, and a total content of Pb, Se and Te of 10 mass ppm or less, the method includes bonding the laminated copper member and the ceramic member by pressing and heating, wherein an average crystal grain size of the copper member before bonding is 10 ?m or more, an aspect ratio is 2 or less, and a pressing load is 0.05 MPa or more and 1.5 MPa or less, a heating temperature is 800? C. or higher and 850? C. or lower, and a holding time at the heating temperature is 10 minutes or longer and 90 minutes or shorter.
Electrochemical energy storage devices
Provided herein are energy storage devices. In some cases, the energy storage devices are capable of being transported on a vehicle and storing a large amount of energy. An energy storage device is provided comprising at least one liquid metal electrode, an energy storage capacity of at least about 1 MWh and a response time less than or equal to about 100 milliseconds (ms).
INSULATED HEAT DISSIPATION SUBSTRATE
An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes an upper surface, a lower surface bonded to the ceramic substrate, and a side surface connecting the upper surface with the lower surface wherein, a tip of the upper surface recedes in the normal direction of the conductor layer from a tip of the lower surface, the side surface has a contour having an inwardly recessed curve line and having a portion receding in the normal direction of the conductor layer from the tip of the upper surface, and a connection portion between the upper surface and the side surface has a rounded shape such that a maximum radius R of a circle is 0.1 mR5 m on average.
INSULATED HEAT DISSIPATION SUBSTRATE
An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes: an upper surface; a lower surface; and a side surface 1 connecting the upper surface with the lower surface; the ceramic substrate includes: a lowest portion; a side surface 2 connecting the lowest portion with the side surface 1 of the conductor layer; and a bonding surface at a position higher than the lowest portion, the bonding surface being bonded to the lower surface of the conductor layer; an absolute value (||) is 20 or less on average; and the side surface 1 has a receding portion from an end of the upper surface in the normal direction relative to the tangential line of the contour of the conductor layer as viewed in plane.
Ceramic circuit substrate and method for producing ceramic circuit substrate
A ceramic circuit substrate according to the present invention includes a ceramic substrate, a copper circuit made of a copper-based material bonded, via a bonding layer, to a surface of the ceramic, and a copper heat sink made of the copper-based material bonded, via a bonding layer, to the other surface of the ceramic. The bonding layers each include a brazing material component including two or more kinds of metals, such as Ag, and an active metal having a predetermined concentration. The bonding layers each include a brazing material layer including the brazing material component, and an active metal compound layer containing the active metal. A ratio of a bonding area of the active metal compound layer in a bonding area of each of the bonding layers is 88% or more.
Method for manufacturing active metal-brazed nitride ceramic substrate with excellent joining strength
A method for manufacturing active metal-brazed a nitride ceramics substrate having excellent joining strength, includes: a step of preparing a mixed raw material; a step of forming a green sheet of the mixed raw material by a tape casting method; a step of removing a binder by performing degreasing; a step of performing sintering; a step of forming an aluminum nitride sintered substrate by performing gradual cooling; and a step of printing a conductive wiring pattern with active metal paste on the aluminum nitride sintered substrate.
Method for producing a composite material
A method for producing a composite material comprising a planar base material to which an additional layer is applied on one side or both sides via a solder layer, characterized by: providing the base material, wherein the base material has a first surface on at least one side; providing the additional layer and arranging the solder layer between a second surface of the additional layer and the first surface such that when the additional layer is deposited on the first surface, the first surface of the base material is covered by the solder layer in a planar manner; wherein a thickness of the solder layer between the base material and the additional layer is smaller than 12 m; heating the base material and the additional layer on the first surface to at least partially melt the solder layer; and connecting the base material to the at least one additional layer.