A method for joining ceramic pieces includes placing a layer of titanium on each of a first ceramic piece and a second ceramic piece; placing a layer of nickel on each of the layers of titanium; assembling the first ceramic piece and the second ceramic piece with the layers of nickel and the layers of titanium between the ceramic pieces; pressing the first ceramic piece and the second ceramic piece with the layers of nickel and the layers of titanium together; heating the first ceramic piece, the second ceramic piece, the layers of nickel, and the layers of titanium to a joining temperature in a vacuum; and cooling the first ceramic piece, the second ceramic piece, the layers of nickel, and the layers of titanium to create a hermetic seal between the first ceramic piece and the second ceramic piece.

A cBN tool that exhibits: excellent chipping resistance and wear resistance; and excellent cutting performance, for a long term use even in intermittent cutting work on high hardened steel is provided. The cutting tool includes a cutting tool body that is a cubic boron nitride-based material containing cubic boron nitride particles as a hard phase component. In the cutting tool, the cubic boron nitride particles includes an Al.sub.2O.sub.3 layer with an average layer thickness of 1.0-10 nm on a surface of the cubic boron nitride particles, a rift with an average rift formation ratio of 0.02-0.20 being formed in the Al.sub.2O.sub.3 layer, and the cubic boron nitride-based sintered material includes a binding phase containing at least one selected from a group consisting of: titanium nitride; titanium carbide; titanium carbonitride; titanium boride; aluminum nitride; aluminum oxide; inevitable products; and mutual solid solution thereof, around the cubic boron nitride particles.

A silicon nitride substrate including a phase encompassed of silicon nitride particles, and intergranular phase formed from a sintering aid, wherein a separation layer is formed on the surface of a molded body including silicon nitride powder, sintering aid powder, and organic binder, by using a boron nitride paste containing boron nitride powder, organic binder, and organic solvent; the separation layer and molded body are heated; the organic binder is removed from the separation layer and molded body; subsequently molded bodies stacked with a separation layer therebetween, are sintered. Boron nitride paste contains 0.01 to 0.50% by oxygen mass and 0.001 to 0.5% by carbon mass, and c/a is within range of 0.02 to 10.00, where c is oxygen content in the powder of the boron nitride paste, and a carbon content in the degreased separation layer, which includes 0.2 to 3.5 mg/cm.sup.2 of hexagonal boron nitride powder.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

A light generator comprises a light conversion device and a light source arranged to apply a light beam to the light conversion element. The light conversion device includes an optoceramic or other solid phosphor element comprising one or more phosphors embedded in a ceramic, glass, or other host, a metal heat sink, and a solder bond attaching the optoceramic phosphor element to the metal heat sink. The optoceramic phosphor element does not undergo cracking in response to the light source applying a light beam of beam energy effective to heat the optoceramic phosphor element to the phosphor quenching point.

A sample holder includes a substrate composed of ceramics, having a sample holding surface provided in an upper face thereof; a supporting member composed of metal, an upper face of the supporting member covering a lower face of the substrate; and a joining layer composed of indium or an indium alloy, the substrate and the supporting member being joined to each other via the joining layer. The joining layer has a layer region in at least one of a joining surface to the substrate and a joining surface to the supporting member, a content percentage of indium oxides of the layer region being higher than that of an intermediate region in a thickness direction of the joining layer.

There is provided a bonded body of the invention in which a ceramic member formed of a ceramic containing Al and a Cu member formed of Cu or a Cu alloy are bonded to each other, in which a bonding portion is formed between the ceramic member and the Cu member, an active metal compound region formed of a compound containing active metal is formed on the bonded portion on the ceramic member side, and an Al concentration of the bonding portion having a thickness range of 0.5 m to 3 m from one surface of the active metal compound region on the Cu member side towards the Cu member side is in a range of 0.5 at % to 15 at %.

The bonded substrate includes the silicon nitride ceramic substrate, a copper plate, the bonding layer, and penetrating regions. The copper plate and the bonding layer are patterned into a predetermined shape, and are disposed over a main surface of the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the main surface of the silicon nitride ceramic substrate. The penetrating regions each include one or more penetrating portions penetrating continuously from the main surface of the substrate into the silicon nitride ceramic substrate to a depth of 3 m or more and 20 m or less, and contain silver, and the number of penetrating regions present per square millimeter of the main surface of the substrate is one or more and 30 or less.

A method of manufacturing power-module substrates, after bonding copper-circuit plates 30 at intervals on a ceramic plate 21 having an area in which ceramic substrates can be formed abreast, by dividing the ceramic plate 21 between the copper-circuit plates 30, in which: bonding-material layers 71 of active-metal brazing material having same shapes as outer shapes of the copper-circuit plates 30 are formed on the ceramic plate 21; temporal-stick material 72 including polyethylene glycol as a major ingredient is spread on the copper-circuit plates 30, the bonding-material layers 71 and the copper-circuit plates 30 are temporarily fixed on the ceramic plate 21 in a state of laminating with positioning by the temporal-stick material 72; and a laminated assembly thereof is pressurized in a laminating direction and heated, so that the ceramic plate and the copper-circuit plates are bonded.

A member for semiconductor manufacturing device includes a susceptor which is a ceramic plate formed of AlN and a gas introduction pipe which is joined to the susceptor. An annular pipe joining bank is provided at a position of the susceptor facing a flange of the gas introduction pipe. In addition, a pipe brazed part is formed between the flange and the pipe joining bank. The flange has a width of 3 mm or more and a thickness of from 0.5 to 2 mm. It is preferable that the height of the pipe joining bank be 0.5 mm or more, the edge of the bank facing the outer edge of the flange. be chamfered as designated by C0.3 or more or rounded as designated by R0.3 or more.