The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.

The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of aluminum-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, at a bonded interface between the copper member and the ceramic member, an active metal compound layer containing an active metal compound that is a compound of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and in the active metal compound layer Al and Cu are present at a grain boundary of the active metal compound.

A copper/ceramic bonded body includes: a copper member (12) made of copper or a copper alloy; and a ceramic member (11) made of nitrogen-containing ceramics, the copper member (12) and the ceramic member (11) being bonded to each other, in which a Mg solid solution layer in which Mg is solid-soluted in a Cu matrix is formed at a bonding interface between the copper member (12) and the ceramic member (11), an active metal nitride layer (41) containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member (11) side, and a thickness of the active metal nitride layer (41) is set to be in a range of 0.05 μm or more and 1.2 μm or less.

A solder material (30) for bonding a metal layer (20) to a ceramic layer (10), in particular for forming a metal-ceramic substrate as a carrier for electrical components, comprising: a base material and an active metal, wherein the solder material (30) is a foil comprising the base material in a first layer (31) and the active metal in a second layer (32), and wherein the foil has a total thickness (GD) which is less than 50 μm, preferably less than 25 μm and particularly preferably less than 15 μm.

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.

A copper-graphene bonded body is a copper-graphene bonded body including a copper member made of copper or a copper alloy and a ceramic member made of silicon nitride, the copper member. The copper member and the ceramic member are bonded to each other, between the copper member and the graphene-containing carbonaceous member, an active metal carbide layer containing a carbide of one or more kinds of active metal selected from Ti, Zr, Nb, and Hf is formed on a side of the graphene-containing carbonaceous member, and a Mg solid solution layer having Mg dissolved in a matrix phase of Cu is formed between the active metal carbide layer and the copper member.

Provided are a brazing material in paste form containing a powder mixture that contains titanium powder having an average particle diameter (D50) of 20 μm or less in an amount of 0.7 to 2.0 mass %, copper powder in an amount of 3 to 15 mass %, and silver powder as the remaining portion, and a vehicle, and techniques associated with the brazing material.