C04B2237/363

SILICON CARBIDE BODY WITH LOCALIZED DIAMOND REINFORCEMENT

A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.

SUPERHARD CONSTRUCTIONS AND METHODS OF MAKING SAME

A super hard polycrystalline construction is disclosed as comprising a first region comprising a body of thermally stable polycrystalline diamond material comprising a plurality of intergrown grains of diamond material; a second region forming a substrate to the first region; and a third region interposed between the first and second regions. The third region extends across a surface of the second region along an interface. The interface comprises at least a portion having an uneven topology, and the third region comprises a diamond composite material including a first phase comprising a plurality of non-intergrown super hard grains, said super hard grains comprising diamond grains; and a matrix material. The superhard material and matrix material of the third region form a diamond composite material which is more acid resistant than polycrystalline diamond material having a binder-catalyst phase comprising cobalt, and/or more acid resistant than cemented tungsten carbide material.

JOINT SURFACE COATINGS FOR CERAMIC COMPONENTS
20170368803 · 2017-12-28 ·

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.

SUPERHARD COMPONENTS AND POWDER METALLURGY METHODS OF MAKING THE SAME
20170361424 · 2017-12-21 ·

A method of forming a super hard polycrystalline construction comprises forming a liquid suspension of a first mass of nano-ceramic particles and a mass of particles or grains of super hard material having an average particle or grain size of 1 or more microns, dispersing the particles or grains in the liquid suspension to form a substantially homogeneous suspension, drying the suspension to form an admix of the nano-ceramic and super hard grains or particles, and forming a pre-sinter assembly comprising the admix. The pre-sinter assembly is then sintered to form a body of polycrystalline super hard material comprising a first fraction of super hard grains and a second fraction, the nano-ceramic particles forming the second fraction.

The super hard grains are spaced along at least a portion of the peripheral surface by one or more nano-ceramic grains, the super hard grains having a greater average grain size than that of the grains in the second fraction which have an average size of less than around 999 nm.

INTERCONNECTED CORRUGATED CARBON-BASED NETWORK
20230194492 · 2023-06-22 ·

An interconnected corrugated carbon-based network comprising a plurality of expanded and interconnected carbon layers is disclosed. In one embodiment, each of the expanded and interconnected carbon layers is made up of at least one corrugated carbon sheet that is one atom thick. In another embodiment, each of the expanded and interconnected carbon layers is made up of a plurality of corrugated carbon sheets that are each one atom thick. The interconnected corrugated carbon-based network is characterized by a high surface area with highly tunable electrical conductivity and electrochemical properties.

VITREOUS CARBON COMPOSITIONS, MULTI-LAYER LAMINATES, AND 3-D PRINTED ARTICLES

Micromorphologically crack-free vitreous carbon articles having a length and width each of which is at least 10 mm, and a thickness of at least 5 mm are described, as well as multilayer laminates of micromorphologically crack-free vitreous carbon, and corresponding methods and apparatus for manufacture of same. 3D printed vitreous carbon articles are also described, together with 3D printing apparatus and methods for producing same. Methods are also described for forming vitreous carbon containing vitreous carbon nanolattice articles therein as filler. The vitreous carbon compositions, articles, and laminates of the disclosure overcome the thickness limitations of conventional vitreous carbon manufacturing methods and the microcracking issues attendant previous efforts to produce vitreous carbon of substantial size and thickness.

SILICON CARBIDE FIBER REINFORCED SILICON CARBIDE COMPOSITE MATERIAL
20170341986 · 2017-11-30 ·

The present invention provides a novel silicon carbide fiber reinforced silicon carbide composite material, which is a composite material of SiC fibers and SiC ceramics with improved toughness, that can be produced with high yield by a relatively simple production step without complex production steps such as a step of oxidation-resistant coating or an advanced interface control step.

The silicon carbide fiber reinforced silicon carbide composite material comprising a multiphase matrix containing a silicon carbide phase and a phase comprising a substance having low reactivity with respect to silicon carbide; and silicon carbide fibers disposed in the matrix can be obtained by a production step suitable for mass production. The composite material ensures greatly improved fracture toughness while maintaining the excellent properties of SiC ceramics.

SEALING MEMBER AND METHOD FOR MANUFACTURING SAME
20230175591 · 2023-06-08 · ·

The present invention provides a sealing member which includes a substrate including silicon carbide; and a plurality of cylindrical or polygonal columnar graphites dispersed in the substrate, and a method for manufacturing the same.

Printing method and device, composite material
20170334132 · 2017-11-23 ·

The present invention relates to a method of printing a composite material (1), for example polymeric, carbonaceous, siliconic or metallic comprising steps of: i) providing a plurality of bundles (2) of reinforcement fibres (4), wherein the reinforcement fibres (4) have a length in the range 3-50 mm and are in the number of about 1,000-100,000 in each bundle (2); ii) aligning the bundles (2) along a predetermined path (X, X′); iii) incorporating at least part of the bundles (2) into a matrix (6, 8), for example polymeric, carbonaceous, siliconic or metallic, preserving the alignment along said path (X, X′); iv) laying and solidifying at least one layer (8) of the matrix (6, 8) of step iii) to make the composite material (1).

BONDING SCHEME FOR DIAMOND COMPONENTS WHICH HAS LOW THERMAL BARRIER RESISTANCE IN HIGH POWER DENSITY APPLICATIONS

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm.sup.2 and/or a linear power density of at least 1 W/mm.