A ceramic material that has a high resistivity and high corrosion resistance according to the present invention contains magnesium-aluminum oxynitride and has a carbon content of 0.005 to 0.275 mass %.

A wafer support includes an RF electrode and a heater electrode that are embedded inside a disk-shaped ceramic base having a wafer placement surface. The RF electrode is constituted by a plurality of RF zone electrodes that are individually disposed for each of a plurality of divided zones of the wafer placement surface. The plurality of RF zone electrodes are separately disposed in at least two stages that are positioned at different distances from the wafer placement surface. The heater electrode is constituted by a plurality of heater zone electrodes that are individually disposed for each of a plurality of divided zones of the wafer placement surface, the zones being divided in a similar or different way to or from the RF zone electrodes.

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

In an embodiment a method for producing a substrate includes forming a green sheet stack including first green sheets and second green sheets, wherein each of the first green sheets and the second green sheets contains a ceramic material as a main component, and wherein the second green sheets further contain a sintering aid in addition to the ceramic material.

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer. When a region having a length of 1,700 μm in a long-side direction is a region P on a cut surface of the ceramic-copper composite obtained when the ceramic-copper composite is cut with a plane perpendicular to a main surface of the ceramic-copper composite, an average crystal grain size D1 of copper crystals at least partially present in a region P1 within 50 μm on a side of the copper layer from an interface between the ceramic layer and the brazing material layer in the region P is 30 μm or more and 100 μm or less.

A heater includes a base body, terminal and joining layer. The base body is made of ceramic. The joining layer contains metal as a principal ingredient and is located between the base body and the terminal. The base body includes a first surface and second surface. The first surface faces an outer side of the base body and includes at least one of a region which is superimposed on the terminal and a region which is located on a periphery of the terminal. The second surface intersects with the first surface and is located on the side closer to an internal portion of the base body on the side away from the first surface. The joining layer extends from the terminal and first surface up to the second surface.

A bonded body is formed by bonding a ceramic member formed of an Al-based ceramic and a copper member formed of copper or a copper alloy, in which, in a bonding layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on a ceramic member side, and, the Al concentration is 0.15 at % or less in a thickness range of 0.5 μm to 3 μm from an interface of the active metal compound layer on a copper member side toward the copper member.

An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C.